High Voltage XPT TM IGBT w/ Diode Preliminary Technical Information IXYX5N5CV1 IXYX5N5CV1HV S 11 = 5V = 5A (sat).v = ns t fi(typ) PLUS7 (IXYX) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE = 1M 5 V V GES Continuous ± V V GEM Transient ±3 V 5 = 5 C 95 A 11 = 11 C 5 A I F11 = 11 C 3 A M = 5 C, 1ms 35 A G C E TO-7PLUS-HV (IXYX...HV) Tab SSOA V GE = 15V, T VJ = 15 C, R G = 5 M = 1 A (RBSOA) Clamped Inductive Load 15 V P C = 5 C 937 W -55... +175 C M 175 C T stg -55... +175 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1. mm (.in.) from Case for 1s C F C Mounting Force.. /.5..7 N/lb Weight g G E C Features Tab G = Gate E = Emitter C = Collector Tab = Collector High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage Symbol Test Conditions Characteristic Values ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = 5μA, V GE = V 5 V V GE(th) = 5μA, = V GE 3. 5. V ES = S, V = V 5 μa GE = 1 C 1 μa I GES = V, V GE = ±V ±1 na (sat) = 15V, Note 1 3.. V = 15 C.7 V Advantages Low Gate Drive Requirement High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches 17 IXYS CORPORATION, All Rights Reserved DS1735B(/17)
Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. g fs = 5A, = 1V, Note 1 7 S R Gi Gate Input Resistance. C ies 3 pf C oes = 5V, V GE = V, f = 1MHz pf C res 3 pf Q g(on) 17 nc Q ge = 15V, =.5 S nc Q gc nc t d(on) 15 ns t ri Inductive load, = 5 C 3 ns = 15V.3 mj t d(off) =.5 S, R G = 5 3 ns t fi Note ns E off 7.3 mj t d(on) 1 ns t ri Inductive load, = 15 C 33 ns = 15V 11. mj t d(off) =.5 S, R G = 5 5 ns t fi Note 35 ns E off 1.5 mj R thjc. C/W R thcs.15 C/W IXYX5N5CV1 IXYX5N5CV1HV Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. V F I F = V, Note 1 3.5 V = 15 C 3.1 V I RM I F = V, = 15 C 3 A t rr -di F /dt = 5A/ s V R = V 15 ns R thjc.3 C/W Notes: 1. Pulse test, t 3μs, duty cycle, d %.. Switching times & energy losses may increase for higher (Clamp), or R G. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,59,931, 5,9,91 5,37,1,,5,,5 B1,3,3,77,55 7,5,73 B 7,157,33B by one or more of the following U.S. patents:,,7 5,17,5 5,3,37 5,31,5,59,3 B1,53,33,71,5 B,759,9 7,3,975 B,1, 5,3,79 5,17,117 5,,715,3,7 B1,53,55,71,3,771,7 B 7,71,537
IXYX5N5CV1 IXYX5N5CV1HV 5 Fig. 1. Output Characteristics @ = 5 o C V GE = 5V 19V 15V 13V 11V 9V 5 Fig.. Extended Output Characteristics @ = 5 o C V GE = 5V 19V 15V 13V 3 7V 15 1 11V 9V 1 5V.5 1 1.5.5 3 3.5.5 5 5.5 - Volts 5 7V 5V 5 1 15 5 3 - Volts 5 3 Fig. 3. Output Characteristics @ = 15 o C V GE = 5V 19V 15V 13V 11V 9V 7V VCE(sat) - Normalized.. 1. 1. 1. 1. 1. V GE = 15V Fig.. Dependence of (sat) on = 5A 1. =.5A 1 3 5 7 - Volts 5V.. -5-5 5 5 75 1 5 15 175 - Degrees Centigrade 7 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 9 Fig.. Input Admittance = 5 o C 7 VCE - Volts 5 = 5A 5A 5 3 = 15 o C 3.5A 1 5 o C - o C 5 7 9 11 13 15 17 19 1 3 5 V GE - Volts..5 5. 5.5..5 7. 7.5..5 9. 9.5 V GE - Volts 17 IXYS CORPORATION, All Rights Reserved
IXYX5N5CV1 IXYX5N5CV1HV Fig. 7. Transconductance Fig.. Gate Charge 3 3 = - o C 5 o C 1 = 5V I G = 1mA g f s - Siemens 15 o C VGE - Volts 1 1 3 5 7 9 - Amperes 1 1 Q G - NanoCoulombs Fig. 9. Capacitance Fig. 1. Reverse-Bias Safe Operating Area 1, 1 Capacitance - PicoFarads 1, 1 f = 1 MHz Cies Coes Cres = 15 o C R G = 5Ω dv / dt < 1V / ns 1 5 1 15 5 3 35 - Volts 1 7 1 13 19 5 - Volts Fig. 11. Forward-Bias Safe Operating Area Fig.. Maximum Transient Thermal Impedance 1 1 1 (sat) Limit ID - Amperes 1 1 5μs 1μs 1ms Z(th)JC - K / W.1.1.1 = 175 o C = 5 o C Single Pulse.1 1 1 1 1 1 V DS - Volts DC 1ms 1ms.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX5N5CV1 IXYX5N5CV1HV Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3 Fig. 1. Inductive Switching Energy Loss vs. Collector Current E off E off = 15 o C, V GE = 15V R G = 5Ω V GE = 15V Eoff - MilliJoules 1 1 1 = 5V = 5A - MilliJoules Eoff - MilliJoules = 5V = 15 o C = 5 o C - MilliJoules 5 1 15 5 3 35 5 5 55 R G - Ohms 1 15 5 3 35 5 5 - Amperes Fig. 15. Inductive Switching Energy Loss vs. 5 Fig.. Inductive Turn-off Switching Times vs. Gate Resistance E off R G = 5Ω V GE = 15V 5 t f i t d(off) = 15 o C, V GE = 15V 15 Eoff - MilliJoules 1 1 1 = 5V = 5A - MilliJoules t f i - Nanoseconds 35 3 5 = 5V = 5A 9 75 5 3 t d(off) - Nanoseconds 15 15 5 5 75 1 5 15 - Degrees Centigrade 1 5 1 15 5 3 35 5 5 55 R G - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Fig. 1. Inductive Turn-off Switching Times vs. 35 t f i t d(off) t f i t d(off) 5 R G = 5Ω, V GE = 15V = 5V 5 3 R G = 5Ω, V GE = 15V = 5V 3 t f i - Nanoseconds 3 = 15 o C 3 t d(off) - Nanoseconds t f i - Nanoseconds 3 = 5A 5 t d(off) - Nanoseconds 1 = 5 o C 1 1 15 1 15 5 3 35 5 5 - Amperes 1 5 5 75 1 5 15 - Degrees Centigrade 17 IXYS CORPORATION, All Rights Reserved
IXYX5N5CV1 IXYX5N5CV1HV 1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 7 9 Fig.. Inductive Turn-on Switching Times vs. Collector Current t r i - Nanoseconds 1 t r i t d(on) = 15 o C, V GE = 15V = 5V = 5A 5 3 t d(on) - Nanoseconds t r i - Nanoseconds 7 5 3 t r i t d(on) R G = 5Ω, V GE = 15V = 5V = 15 o C 1 t d(on) - Nanoseconds = 5 o C 1 1 1 5 1 15 5 3 35 5 5 55 R G - Ohms 1 15 5 3 35 5 5 - Amperes 1 Fig. 1. Inductive Turn-on Switching Times vs. t r i t d(on) 1 R G = 5Ω, V GE = 15V = 5V t r i - Nanoseconds = 5A 1 t d(on) - Nanoseconds 1 5 5 75 1 5 15 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX5N5CV1 IXYX5N5CV1HV Fig.. Diode Forward Characteristics Fig. 3. Reverse Recovery Charge vs. -di F /dt 1 7 = 15 o C V R = V I F = 5A 1 = 5 o C IF (A) = 15 o C QRR (μc) 5 5A 3.5A 1 3 5 7 V F (V) 1 1 1 -di F / dt (A/μs) Fig.. Reverse Recovery Current vs. -di F /dt Fig. 5. Reverse Recovery Time vs. -di F /dt 3 7 = 15 o C V R = V I F = 5A = 15 o C V R = V I F = 5A 5A IRR (A) 5.5A trr (ns) 5A.5A 3 1 1 di F /dt (A/μs) 1 1 -di F /dt (A/μs) 1.1 Fig.. Dynamic Parameters Q RR, I RR vs. 1 Fig. 7. Maximum Transient Thermal Impedance (Diode) V R = V 1. I F = 5A -dif/dt = 5A/μs KF.9 Z(th)JC - K / W.1. K F Q RR K F I RR.7 1 1 (ºC).1.1.1.1.1 1 1 Pulse Width - Seconds 17 IXYS CORPORATION, All Rights Reserved IXYS REF: IXY_5N5CV1HV(7T-AT) -17-17-B
IXYX5N5CV1 IXYX5N5CV1HV PLUS 7 TM Outline A A E Q E1 R TO-7PLUS-HV Outline E A A E1 R D Q D D1 D D1 L L1 1 3 D3 1 3 L1 A3 X A1 D E E3 X A1 b e C 3 PLCS b PLCS PLCS b 1 - Gate, - Emitter 3 - Collector e e1 c b 3X 1 - Gate, - Emitter 3 - Collector b1 3X IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.