Advance Technical Information TrenchT4 TM Power MOSFET IXTT44N4T4HV V DSS = 4V I D25 = 44A R DS(on).25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings V DSS = 25 C to 75 C 4 V V DGR = 25 C to 75 C, R GS = M 4 V M Transient 5 V I D25 = 25 C 44 A I LRMS Lead Current Limit, RMS 6 A I DM = 25 C, Pulse Width Limited by M 2 A I A = 25 C 44 A E AS = 25 C.5 J P D = 25 C 94 W -55... +75 C M 75 C T stg -55... +75 C T L Maximum Lead Temperature for Soldering 3 C T SOLD.6 mm (.62in.) from Case for s 26 C Weight 4 g G D (Tab) G = Gate D = Drain S = Source Tab = Drain Features International Standard Package Low R DS(ON) and Q G Avalanche Rated Low Package Inductance S Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 25 A 4 V (th) V DS =, I D = 25 A 2. 4. V I GSS = 5V, V DS = V 2 na I DSS V DS = V DSS, = V A = 25 C ma Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls R DS(on) = V, I D = A, Note.25 m 26 IXYS CORPORATION, All Rights Reserved DS79(4/6)
IXTT44N4T4HV Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max g fs V DS = V, I D = 6A, Note 8 S R Gi Gate Input Resistance. C iss 26 nf C oss = V, V DS = 25V, f = MHz 357 pf C rss 235 pf t d(on) Resistive Switching Times 44 ns t r V 25 ns GS = V, V DS =.5 V DSS, I D =.5 I D25 t d(off) R 2 ns G = 2 (External) t f 74 ns Q g(on) 48 nc Q gs = V, V DS =.5 V DSS, I D =.5 I D25 36 nc Q gd 62 nc R thjc.6 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max I S = V 44 A I SM Repetitive, pulse Width Limited by M 76 A V SD I F = I S, = V, Note.4 V t rr I 72 ns F = 5A, -di/dt = A/μs Q RM nc V I R = 3V RM 3 A Note. Pulse test, t 3μs, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or moreof the following U.S. patents: 4,86,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,45 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2 7,7,537
IXTT44N4T4HV Fig.. Output Characteristics @ Fig. 2. Extended Output Characteristics @ 3 = 5V V 9V 35 3 = V 8V 25 8V 25 7V 2 5 7V 2 5 6.5V 5 6V 5 6V.5..5.2.25.3.35.4 5V.5.5 2 2.5 3 25 2 5 Fig. 3. Output Characteristics @ = 5ºC = 5V V 8V 7V 6V RDS(on) - Normalized.8.6.4.2. Fig. 4. Normalized R DS(on) to I D = A Value vs. Junction Temperature = V I D > A 5 5V.8..2.3.4.5.6.6-5 -25 25 5 75 25 5 75 - Degrees Centigrade.8 Fig. 5. Normalized R DS(on) to I D = A vs. Drain Current 8 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized.6.4.2. = V 5V = 75ºC 6 4 2 8 6 4 External Lead Current Limit 2.8 5 5 2 25 3 35-5 -25 25 5 75 25 5 75 - Degrees Centigrade 26 IXYS CORPORATION, All Rights Reserved
IXTT44N4T4HV 2 Fig. 7. Input Admittance 45 Fig. 8. Transconductance 75 V DS = V 4 V DS = V = - 4ºC 5 25 75 = 5ºC 25ºC - 4ºC g f s - Siemens 35 3 25 2 5 25ºC 5ºC 5 25 5 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts 2 4 6 8 2 4 6 8 2 Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 3 9 V DS = 2V 25 8 I D = 22A I G = ma 2 7 IS - Amperes 5 = 5ºC VGS - Volts 6 5 4 3 5 2.2.3.4.5.6.7.8.9...2 V SD - Volts 2 3 4 5 Q G - NanoCoulombs Fig.. Capacitance Fig. 2. Forward-Bias Safe Operating Area, f = MHz R DS(on) Limit Capacitance - nanofarads Ciss Coss, External Lead Current Limit = 75ºC µs ms Crss 5 5 2 25 3 35 4 = 25ºC ms Single Pulse ms DC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT44N4T4HV 6 Fig. 3. Resistive Turn-on Rise Time vs. Junction Temperature 45 Fig. 4. Resistive Turn-on Rise Time vs. Drain Current R G = 2Ω, = V R G = 2Ω, = V 5 V DS = 2V 4 V DS = 2V t r - Nanoseconds 4 3 2 I D = 44A I D = 22A t r - Nanoseconds 35 3 25 = 5ºC 2 25 5 75 25 5 - Degrees Centigrade 5 22 24 26 28 3 32 34 36 38 4 42 44 9 Fig. 5. Resistive Turn-on Switching Times vs. Gate Resistance 8 8 Fig. 6. Resistive Turn-off Switching Times vs. Junction Temperature 6 t r - Nanoseconds 8 7 6 5 4 3 2 t r t d(on) = 5ºC, = V V DS = 2V I D = 44A I D = 22A 6 4 2 8 6 4 t d(on) - Nanoseconds t f - Nanoseconds 78 76 74 72 7 t f t d(off) R G = 2Ω, = V V DS = 2V I D = 22A I D = 44A 5 4 3 2 t d(off) - Nanoseconds 2 68 2 4 6 8 2 4 R G - Ohms 66 9 25 5 75 25 5 - Degrees Centigrade 8 Fig. 7. Resistive Turn-off Switching Times vs. Drain Current 6 6 Fig. 8. Resistive Turn-off Switching Times vs. Gate Resistance 65 78 t f t d(off) R G = 2Ω, = V 5 5 t f t d(off) = 5ºC, = V 55 t f - Nanoseconds 76 74 72 7 = 5ºC V DS = 2V 4 3 2 t d(off) - Nanoseconds t f - Nanoseconds 4 3 2 V DS = 2V I D = 22A I D = 44A 45 35 25 t d(off) - Nanoseconds 68 5 66 9 22 24 26 28 3 32 34 36 38 4 42 44 5 2 3 4 5 6 7 8 9 2 3 4 5 R G - Ohms 26 IXYS CORPORATION, All Rights Reserved
IXTT44N4T4HV Fig. 9. Maximum Transient Thermal Impedance.3 Fig. 9. Maximum Transient Thermal Impedance aaaa. Z(th)JC - K / W....... Pulse Width - Seconds TO-268HV Outline PINS: - Gate 2 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_44N4T4 (T7-M4) 4-27-6