Data Sheet, Doc. No. 5SYA 1432-1 1-216 5SNA 13K453 StakPak IGBT Module VCE = 45 V IC = 13 A Fails into stable shorted state Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High tolerance to uneven mounting pressure Explosion resistant package Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = V, Tvj 25 C 45 V DC collector current IC TC = 85 C, Tvj 13 A Peak collector current ICM tp = 1 ms 26 A Gate-emitter voltage VGES -2 2 V Total power dissipation Ptot TC = 25 C, Tvj 167 W DC forward current IF 13 A Peak forward current IFRM tp = 1 ms 26 A Surge current IFSM VR = V, Tvj, tp = 1 ms, half-sinewave 21 A IGBT short circuit SOA tpsc VCC = 34 V, VCEM CHIP 45 V VGE 15 V, Tvj 125 C 1 µs Junction temperature Tvj -5 15 C Junction operating temperature Tvj(op) -5 125 C Case temperature TC -5 125 C Storage temperature Tstg -5 7 C Mounting force 2) FM 6 9 kn 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 6747 2) For detailed mounting instructions refer to ABB document no. 5SYA 237-2
IGBT characteristic values 3) Parameter Symbol Conditions min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V(BR)CES VGE = V, IC = 1 ma, Tvj = 25 C 45 V VCE sat IC = 13 A, VGE Collector cut-off current ICES VCE = 45 V, VGE = V Tvj = 25 C 2.7 3. V Tvj 3.4 3.7 V Tvj = 25 C 1 ma Tvj 55 8 ma Gate leakage current IGES VCE = V, VGE = 2 V, Tvj -5 5 na Gate-emitter threshold voltage VGE(th) IC = 24 ma, VCE = VGE, Tvj = 25 C 5.3 7.3 V Gate charge QG IC = 13 A, VCE = 28 V, VGE = -15 V..15 V 6.4 µc Input capacitance Cies 14 nf Output capacitance Coes VCE = 25 V, VGE = V, f = 1 MHz, Tvj = 25 C 1 nf Reverse transfer capacitance Cres 2.8 nf Internal gate resistor RGint.21 Turn-on delay time Rise time td(on) tr VCC = 28 V, IC = 13 A, RG = 1.8, CGE = 33 nf, VGE = 15 V, = 2 nh, inductive load Turn-off delay time Fall time td(off) tf VCC = 28 V, IC = 13 A, RG = 8.2, CGE = 33 nf, VGE = 15 V, = 2 nh, inductive load Turn-on switching energy Turn-off switching energy Short circuit current Eon Eoff 3) Characteristic values according to IEC 6747 9 4) Collector-emitter saturation voltage is given at chip level ISC VCC = 28 V, IC = 13 A, RG = 1.8, CGE = 33 nf, VGE = ±15 V, = 2 nh, inductive load VCC = 28 V, IC = 13 A, RG = 8.2, CGE = 33 nf, VGE = ±15 V, = 2 nh, inductive load tpsc 1 µs, VGE, VCC = 34 V, VCEM CHIP 45 V Tvj = 25 C 6 ns Tvj 72 ns Tvj = 25 C 5 ns Tvj 6 ns Tvj = 25 C 33 ns Tvj 37 ns Tvj = 25 C 7 ns Tvj 68 ns Tvj = 25 C 35 mj Tvj 5 mj Tvj = 25 C 55 mj Tvj 7 mj Tvj 6 A 2 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
Diode characteristic values 5) Parameter Symbol Conditions min typ max Unit Forward voltage 6) VF IF = 13 A Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) Characteristic values according to IEC 6747 2 6) Forward voltage is given at chip level IRM Qr trr Erec VCC = 28 V, IF = 13 A, VGE = 15 V, RG = 1.8, CGE = 33 nf, di/dt = 3.8 ka/µs = 2 nh, inductive load Tvj = 25 C 2.2 2.4 V Tvj 2.4 2.6 V Tvj = 25 C 18 A Tvj 22 A Tvj = 25 C 13 µc Tvj 23 µc Tvj = 25 C 11 ns Tvj 24 ns Tvj = 25 C 23 mj Tvj 38 mj Package properties Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance 2) case to heatsink Diode thermal resistance 2) case to heatsink Rth(j-c)IGBT.63 K/W Rth(j-c)DIODE.6 K/W Rth(c-h)IGBT Heatsink flatness : Complete module area < 1 µm.15 K/W Each submodule area < 2 µm Rth(c-h)DIODE Roughness : < 1.6 µm.15 K/W Comparative tracking index CTI 6 2) for detailed mounting instructions refer to ABB Document No. 5SYA 237-2 Mechanical properties Parameter Symbol Conditions min typ max Unit device clamped 246.95 x 237.3 x 28.75 Dimensions L x W x H Typical mm device unclamped 246.95 x 237.3 x 31.5 Clearance distance in air da according to IEC 6664-1 and EN 5124-1 23 mm Surface creepage distance ds according to IEC 6664-1 and EN 5124-1 4 mm Mass m 37 g 3 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
Electrical configuration C (Collector) E (Emitter) G (Gate) AE (Aux. Emitter) Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 This is an electrostatic sensitive device; please observe the international standard IEC 6747-1, chap. VIII. This product has been designed and qualified for Industrial Level. 4 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
26 26 = 195 25 C 195 13 125 C 13 125 C 65 65 25 C 1 2 3 4 5 6 5 6 7 8 9 1 11 12 13 14 Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 26 26 195 19 V 195 19 V 17 V 17 V 13 15 V 13 V 13 15 V 13 V 65 11 V 9 V = 25 C 65 11 V 9 V 1 2 3 4 5 1 2 3 4 5 6 Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level 5 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
2 12.5 = 28 V 15 on = 1.8 off = 8.2 = 33 nf = 2 nh E on E off 1. 7.5 E on E on, E off in J 1 E on, E off in J 5. E off = 28 V 5 2.5 = 2 A = 33 nf = 2 nh 65 13 195 26. 2 4 6 8 1 12 14 16 in Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor 1 1 t d(off) t d(off) t d(on), t r, t d(off), t f in µs 1 t f t d(on) t r = 28 V on = 1.8 off = 8.2 = 33 nf = 2 nh.1 65 13 195 26 t d(on), t r, t d(off), t f in µs 1 t r t d(on).1 2 4 6 8 1 12 14 16 in t f = 28 V = 2 A = 15 V = 33 nf = 2 nh Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor 6 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
1 = V f OSC = 1 MHz V OSC = 5 mv 2 15 C ies 1 1 5 C in nf C oes 1 C res -5 1 5 1 15 2 25 3 35-1 -15 = 28 V = 34 V 2 4 6 8 1 Q G in C Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. 1 Typical gate charge characteristics 2. 1.5 pulse / 1..5 34 V = ±15 V = 8.2 chip module. 1 2 3 4 5 Fig. 11 Turn-off safe operating area (RBSOA) 7 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
5 5 = 28 V E rec in mj, I RM, Q r in µc 4 3 2 on = 1.8 = 33 nf = 2 nh E rec Q r I RM E rec in mj, I RM, Q r in µc 4 3 2 = 6.8 = 4.7 = 3.3 Q r = 2.7 = 2.2 = 1.8 = 1.5 E rec = 1.2 = 1. 1 65 13 195 26 I F 1 I RM = 28 V I F = 2 A = 33 nf = 2 nh 1 2 3 4 5 6 di/dt in ka/µs Fig. 12 Typical reverse recovery characteristics vs. forward current Fig. 13 Typical reverse recovery characteristics vs. di/dt 26 26 34 V di/dt 4 ka/µs 195 195 25 C I F 13 125 C I R 13 65 65..5 1. 1.5 2. 2.5 3. 3.5 V F 1 2 3 4 5 V R Fig. 14 Typical diode forward characteristics chip level Fig. 15 Safe operating area diode (SOA) 8 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216
1 1 Analytical function for transient thermal impedance: Z th(j-c) in K/kW IGBT, DIODE 1 Z th(j-c) IGBT Z th(j-c) Diode DIODE IGBT Z th (j-c) (t) = n i 1 R i (1-e -t/ i i 1 2 3 4 5 R i in K/kW 2.42 2.648.537.492 i in s.581.59.6.1 R i in K/kW 2.49 2.639.536.485 i in s.584.59.6.1 ) 1-1 1-3 1-2 1-1 1 1 1 t in s Fig. 16 Thermal impedance vs. time 5SNA 13K453 Doc. No. 5SYA 1432-1 1-216 Related documents: 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 293 Thermal design of IGBT modules ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-56 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 136 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded.