S 25 (sat) Low (sat) IGBT IXSH/IXSM 4 N V 75 A 2.5 V High Speed IGBT IXSH/IXSM 4 NA V 75 A 3. V Short ircuit SOA apability Symbol Test onditions Maximum Ratings S = 25 to 15 V V GR = 25 to 15 ; E = 1 MΩ V S ontinuous ±2 V M Transient ±3 V 25 T = 25 75 A 9 T = 9 4 A M T = 25, 1 ms 15 A SSOA = 15 V, = 125, = 2.7 Ω M = 8 A (RBSOA) lamped inductive load, L = 3 µh @.8 S t S = 15 V, = 3 V, = 125 1 µs (SSOA) = 22 Ω, non repetitive P T = 25 3 W -55... +15 M 15 T stg -55... +15 M d Mounting torque 1.13/1 Nm/lb.in. Weight TO-24 = 18 g, TO-247 = g Maximum lead temperature for soldering 3 1. mm (.2 in.) from case for 1 s Symbol Test onditions haracteristic Values ( = 25, unless otherwise specified) min. typ. max. BS = 25 µa, = V V (th) = 4 ma, = 4 7 V ES =.8 S = 25 5 µa = V = 125 1 ma I GES = V, = ±2 V ±1 na (sat) = 9, = 15 V 4N 2.5 V 4NA 3. V TO-247 AD (IXSH) G E TO-24 AE (IXSM) G = Gate, E = Emitter, = ollector, TAB = ollector Features International standard packages Guaranteed Short ircuit SOA capability Low VE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 2 khz Applications A motor speed control Uninterruptible power supplies (UPS) Welding Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density. All rights reserved. 354 Bassett Street, Santa lara A 9554 Phone: 48-982-7, Fax: 48-49-7 IXYS reserves the right to change limits, test conditions and dimensions. 9154F (4/9) Phone: +49-2-53-, Fax: +49-2-5327
IXSH 4N IXSH 4NA IXSM 4N IXSM 4NA Symbol Test onditions haracteristic Values ( = 25, unless otherwise specified) min. typ. max. TO-247 AD Outline g fs = 9 ; = 1 V, 1 23 S Pulse test, t 3 µs, duty cycle 2 % (on) = 15 V, = 1 V 2 A ies 45 pf oes = 25 V, = V, f = 1 MHz 35 pf res 9 pf Q g 19 2 n Q ge = 9, = 15 V, =.5 S 45 n Q gc 88 12 n t d(on) Inductive load, = 25 55 ns t ri = 9, = 15 V, L = 1 µh 17 ns t d(off) =.8 S, = 2.7 Ω 4 ns Switching times may 4N 4 ns increase for (lamp) 4NA 2 ns G 4NA 2.5 mj >.8 S, higher or increased R 4N 5. mj t d(on) 55 ns Inductive load, = t ri 125 17 ns E on = 9, = 15 V, 1.7 mj t d(off) L = 1 µh 4N 1 ns =.8 S, 4NA 34 525 ns = 2.7 Ω 4N 15 ns Remarks: Switching times 4NA 34 7 ns may increase for 4N 12 mj (lamp) >.8 S, higher T 4NA mj J or increased R thj.42 K/W R thk.25 K/W 1 = Gate 2 = ollector 3 = Emitter Tab = ollector TO-24AE Outline 1 = Gate 2 = Emitter ase = ollector IXYS reserves the right to change limits, test conditions, and dimensions. 354 Bassett Street, Santa lara A 9554 Phone: 48-982-7, Fax: 48-49-7 IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,18 5,17,58 5,49,91 5,187,117 5,48,715 4,85,72 4,931,844 5,34,79 5,3,37 5,237,481 5,381,25 Phone: +49-2-53-, Fax: +49-2-5327
IXSH 4N IXSH 4NA IXSM 4N IXSM 4NA Fig. 1 Saturation haracteristics Fig. 2 Output haracterstics 8 2 T 13V J = 25 = 15V 7 18 = 25 = 15V 1 14 11V 13V 5 12 4 1 3 8 11V 2 9V 4 1 9V 2 7V 7V 1 2 3 4 5 2 4 8 1 12 14 1 18 2 Fig. 3 ollector-emitter Voltage Fig. 4 Temperature Dependence 1 vs. Gate-Emitter 1.5 = 25 Voltage of Output Saturation Voltage 9 =15V 1.4 I 8 = 8A 1.3 7 1.2 5 1.1 = 8A = 4A 4 I 1. = 4A 3.9 2 I = 2A = 2A 1.8.7 8 9 1 11 12 13 14 15-5 -25 25 5 75 1 125 15 (sat) - Normalized - Degrees Fig. 5 Input Admittance Fig. Temperature Dependence of 8 1.3 Breakdown and = 1V Threshold Voltage 7 BV 1.2 ES = 3mA 1.1 5 4 3 2 1 = 25 = 125 = - 4 BV / (th) - Normalized 1..9.8 8th) = 4mA 4 5 7 8 9 1 11 12 13. All rights reserved. 354 Bassett Street, Santa lara A 9554 Phone: 48-982-7, Fax: 48-49-7.7-5 -25 25 5 75 1 125 15 - Degrees Phone: +49-2-53-, Fax: +49-2-5327
IXSH 4N IXSH 4NA IXSM 4N IXSM 4NA T fi - nanoseconds 1 75 5 25 Fig.7 Turn-Off Energy per Pulse and Fall Time on ollector urrent = 125 = 1Ω (-A) hi-speed (-A) hi-speed 12 9 3 - millijoules tfi - nanoseconds 1 8 4 2 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on = 125 = 4A (-A), hi-speed (-A), hi-speed 1 8 4 2 - millijoules 1 2 3 4 5 7 8 1 2 3 4 5 - Ohms Fig.9 Gate harge haracteristic urve Fig.1 Turn-Off Safe Operating Area 15 12 9 = 4A = 48V 1 1 1 = 125 = 22Ω dv/dt < V/ns 3.1 5 1 15 2 25 Q g - noulombs.1 1 2 3 4 5 7 Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W.1.1 D=.5 D=.2 D=.1 D=.5 D=.2 D=.1 Single Pulse D = Duty ycle.1.1.1.1.1.1 1 IXYS reserves the right to change limits, test conditions, and dimensions. 354 Bassett Street, Santa lara A 9554 Phone: 48-982-7, Fax: 48-49-7 Time - Seconds Phone: +49-2-53-, Fax: +49-2-5327
. All rights reserved. 354 Bassett Street, Santa lara A 9554 Phone: 48-982-7, Fax: 48-49-7 Phone: +49-2-53-, Fax: +49-2-5327
IXYS reserves the right to change limits, test conditions, and dimensions. 354 Bassett Street, Santa lara A 9554 Phone: 48-982-7, Fax: 48-49-7 Phone: +49-2-53-, Fax: +49-2-5327