TrenchT2 TM GigaMOS TM HiperFET TM Power MOSFET MMIXF52N75T2 V DSS = 75V I D25 = 5A R DS(on).6m (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings V DSS = 25 C to 75 C 75 V V DGR = 25 C to 75 C, R GS = M 75 V S Continuous 2 V M Transient 3 V I D25 = 25 C 5 A I DM = 25 C, Pulse Width Limited by M 7 A I A = 25 C 2 A E AS = 25 C 3 J P D = 25 C 83 W -55... +75 C M 75 C T stg -55... +75 C T L Maximum Lead Temperature for Soldering 3 C T SOLD Plastic Body for s 26 C V ISOL 5/6 Hz, Minute 25 V~ F C Mounting Force 5..2 /..45 N/lb. Weight 8 g Features Isolated Tab S G = Gate S = Source G D = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (25V~) 75 C Operating Temperature Very High Current Handling Capability Fast Intrinsic Diode Avalanche Rated D Very Low R DS(on) Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 3mA 75 V (th) V DS =, I D = 8mA 2.5 5. V I GSS = 2V, V DS = V 2 na I DSS V DS = V DSS, = V 25 A = 5 C 2. ma R DS(on) = V, I D = A, Note.6 m Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications 25 IXYS CORPORATION, All Rights Reserved DS269B(2/5)
MMIXF52N75T2 Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = V, I D = 6A, Note 95 55 S C iss 4 nf C oss = V, V DS = 25V, f = MHz 45 pf C rss 53 pf R GI Gate Input Resistance.36 t d(on) 48 ns Resistive Switching Times t r 36 ns V t GS = V, V DS =.5 V DSS, I D = 2A d(off) 8 ns R G = (External) t f 35 ns Q g(on) 545 nc Q gs = V, V DS =.5 V DSS, I D = 26A 77 nc Q gd 35 nc R thjc.8 C/W R thcs.5 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. I S = V 52 A I SM Repetitive, Pulse Width Limited by M 6 A V SD I F = A, = V, Note.25 V t rr I 5 ns F = 5A, = V I RM 7 A -di/dt = A/ s Q RM V 357 nc R = 37.5V Note. Pulse test, t 3 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or more of the following U.S. patents: 4,85,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,45 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2 7,7,537
MMIXF52N75T2 4 35 3 Fig.. Output Characteristics @ = 5V V 8V 7V 4 35 3 Fig. 2. Output Characteristics @ = 5ºC = 5V V 8V 7V 25 2 5 6V 25 2 5 6V 5V 5V 5 4V..2.3.4.5.6.7.8.9..2 5 4V 3V..2.3.4.5.6.7.8.9..2 Fig. 3. Normalized R DS(on) vs. Junction Temperature Fig. 4. Normalized R DS(on) vs. Drain Current 2.2 2. = V I D < 52A 2.2 2. RDS(on) - Normalized.8.6.4.2..8 RDS(on) - Normalized.8.6.4.2. = V 5V = 75ºC.6-5 -25 25 5 75 25 5 75 - Degrees Centigrade.8 5 5 2 25 3 35 6 Fig. 5. Drain Current vs. Case Temperature 25 Fig. 6. Input Admittance 225 5 4 3 2 2 75 5 25 75 = 5ºC 25ºC - 4ºC 5 25-5 -25 25 5 75 25 5 75 - Degrees Centigrade 2.5 3. 3.5 4. 4.5 5. 5.5 6. - Volts 25 IXYS CORPORATION, All Rights Reserved
MMIXF52N75T2 3 Fig. 7. Transconductance 35 Fig. 8. Forward Voltage Drop of Intrinsic Diode = - 4ºC 25 3 g f s - Siemens 2 5 25ºC 5ºC IS - Amperes 25 2 5 = 5ºC 5 5 5 5 2 25.3.4.5.6.7.8.9. V SD - Volts Fig. 9. Gate Charge Fig.. Capacitance 9 I D = 26A VGS - Volts 8 7 6 5 4 3 2 I G = ma Capacitance - NanoFarads C iss Coss C rss f = MHz 2 3 4 5 6 Q G - NanoCoulombs. 5 5 2 25 3 35 4, Fig.. Forward-Bias Safe Operating Area Fig. 2. Maximum Transient Thermal Impedance R DS(on) Limit, 25µs µs. ms Z(th)JC - K / W. = 75ºC ms. = 25ºC Single Pulse DC ms...... Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIXF52N75T2 Fig. 3. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 4. Resistive Turn-on Rise Time vs. Drain Current 8 8 6 R G = Ω, = V 6 R G = Ω, = V 4 4 t r 2 8 6 I D = 2A I D = A t r 2 8 6 = 25ºC 4 4 2 2 25 35 45 55 65 75 85 95 5 5 25 - Degrees Centigrade 4 6 8 2 4 6 8 2 Fig. 5. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 6. Resistive Turn-off Switching Times vs. Junction Temperature 6 24 44 4 t r 5 4 3 2 t r t d(on) - - - - = 25ºC, = V I D = 2A I D = A 2 6 2 8 t d(on) t f 42 4 38 36 34 I D = A t f t d(off) - - - - R G = Ω, = V I D = 2A 3 2 9 t d(off) 4 32 8 2 3 4 5 6 7 8 9 R G - Ohms 3 7 25 35 45 55 65 75 85 95 5 5 25 - Degrees Centigrade Fig. 7. Resistive Turn-off Switching Times vs. Drain Current Fig. 8. Resistive Turn-off Switching Times vs. Gate Resistance 46 8 6 6 44 t f t d(off) - - - - R G = Ω, = V 6 5 t f t d(off) - - - - = 25ºC, = V 5 t f 42 4 38 36 = 25ºC 4 2 8 t d(off) t f 4 3 2 I D = 2A, A 4 3 2 t d(off) 34 6 32 4 4 6 8 2 4 6 8 2 2 3 4 5 6 7 8 9 R G - Ohms 25 IXYS CORPORATION, All Rights Reserved IXYS REF: IXFZ52N75T2 (V9)3-3-
MMIXF52N75T2 Package Outline PIN: = Gate 5-2 = Source 3-24 = Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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