IGBT Power Losses Calculation Using the Data-Sheet Parameters

Similar documents
A Novel Isolated Buck-Boost Converter

DF452. Fast Recovery Diode DF452 APPLICATIONS KEY PARAMETERS V RRM 1600V I F(AV) 540A I FSM. 5000A Q r t rr FEATURES VOLTAGE RATINGS

ZVS Boost Converter. (a) (b) Fig 6.29 (a) Quasi-resonant boost converter with M-type switch. (b) Equivalent circuit.

POWER AMPLIFIERS. 1. Explain what are classes A, B, AB and C amplifiers in terms of DC biasing using a MOSFET drain characteristic.

Sections 15.1 to 15.12, 16.1 and 16.2 of the textbook (Robbins-Miller) cover the materials required for this topic.

SFDMB3638F. Specifications and Applications Information. orce LED Driver. Mass: 7 grams typ. 10/15/08 Preliminary. Package Configuration

1. Transformer A transformer is used to obtain the approximate output voltage of the power supply. The output of the transformer is still AC.

Edexcel GCSE Physics

Synchronous Motor V-Curves

Design and Simulation of Dc-Dc Voltage Converters Using Matlab/Simulink

IDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

Lecture 02 CSE 40547/60547 Computing at the Nanoscale

Multiple Sets of Pulse Adjustment Control Technique Based on Input Voltage Feed-forward Compensation for DC-DC Converters Ming Qina, Jingchao Lib

Data Sheet. ACPL-8x7 Multi-Channel Full-Pitch Phototransistor Optocoupler. Description. Features. ACPL-827 pin layout.

IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C

Technical Bulletin. Generation Interconnection Procedures. Revisions to Cluster 4, Phase 1 Study Methodology

MODULE TITLE : ELECTRONICS TOPIC TITLE : AMPLIFIERS LESSON 1 : FEEDBACK

Surge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg

IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology

Maximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit

Copyright Paul Tobin 63

Introduction to Three-phase Circuits. Balanced 3-phase systems Unbalanced 3-phase systems

BF908; BF908R IMPORTANT NOTICE. use

IDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C

Relationships Between Frequency, Capacitance, Inductance and Reactance.

SMG2305L. P-Channel Enhancement Mode Power Mos.FET WILLAS ELECTRONIC CORP. Description. Features. Applications. Absolute Maximum Ratings

DC-DC Switch-Mode Converters

Prasanna U R, Member IEEE and Akshay K. Rathore, Senior Member, IEEE

Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology

Oscillator. Introduction of Oscillator Linear Oscillator. Stability. Wien Bridge Oscillator RC Phase-Shift Oscillator LC Oscillator

IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

APPLICATION GUIDE (v4.1)

Current-Sourced Buck Converter

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Photocoupler Product Data Sheet MOC3083 SERIES Spec No.: DS Effective Date: 11/30/2016 LITE-ON DCC RELEASE

Applying Kirchoff s law on the primary circuit. V = - e1 V+ e1 = 0 V.D. e.m.f. From the secondary circuit e2 = v2. K e. Equivalent circuit :

SKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

5-V Low Drop Fixed Voltage Regulator TLE 4275

SKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

DISCRETE SEMICONDUCTORS DATA SHEET. BF996S N-channel dual-gate MOS-FET. Product specification File under Discrete Semiconductors, SC07

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

August TLE500x TLE501x. GMR-Based Angular Sensor. Application Note GMR Angle Error Extension V 1.2. Sensors

5-V Low-Drop Fixed Voltage Regulator TLE 4269

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

OTHER USES OF THE ICRH COUPL ING CO IL. November 1975

Coupled Inductors and Transformers

Physics 2B Chapter 23 Notes - Faraday s Law & Inductors Spring 2018

How do scientists measure trees? What is DBH?

thinq! SiC Schottky Diode

IKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Low Drop Voltage Regulator TLE 4296

BASIC DIRECT-CURRENT MEASUREMENTS

5-V Low Drop Voltage Regulator TLE 4290

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

Low-Drop Voltage Tracker TLE 4250 G

ECEN 4872/5827 Lecture Notes

Revision: August 19, E Main Suite D Pullman, WA (509) Voice and Fax

Property of LITE-ON Only

OptiMOS TM -T2 Power-Transistor

Switching Inductive Loads with TLE724xSL

TRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IGEE 401 Power Electronic Systems. Solution to Midterm Examination Fall 2004

Three charges, all with a charge of 10 C are situated as shown (each grid line is separated by 1 meter).

Analysis of a Positive Output Super-Lift Luo Boost Converter

A Comparison of AC/DC Piezoelectric Transformer Converters with Current Doubler and Voltage Doubler Rectifiers

Green Product (RoHS compliant) AEC Qualified

OP AMP CHARACTERISTICS

TRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

I. Analytical Potential and Field of a Uniform Rod. V E d. The definition of electric potential difference is

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.

A Novel Electro-thermal Simulation Approach to Power IGBT Modules for Automotive Traction Applications

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

LECTURES 4 AND 5 THREE-PHASE CONNECTIONS (1)

Department of Electrical Engineering, University of Waterloo. Introduction

I C P tot 138 W

Definition of Strain. Tutorial

DEFENSE OCCUPATIONAL AND ENVIRONMENTAL HEALTH READINESS SYSTEM (DOEHRS) ENVIRONMENTAL HEALTH SAMPLING ELECTRONIC DATA DELIVERABLE (EDD) GUIDE

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Transduction Based on Changes in the Energy Stored in an Electrical Field

This chip is used for: power module BSM 75GD120DN2. Emitter pad size 8 x ( 2.99 x 1.97 ) Thickness 200 µm. Wafer size 150 mm

System Non-Synchronous Penetration Definition and Formulation

This chip is used for: power modules. Applications: drives G. Mechanical Parameters Raster size 9.47 x 12.08

Low Drop Voltage Regulator TLE 4295

Chem 163 Section: Team Number: ALE 24. Voltaic Cells and Standard Cell Potentials. (Reference: 21.2 and 21.3 Silberberg 5 th edition)

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode

IR Emitter and Detector Product Data Sheet LTE-C9306 Spec No.: DS Effective Date: 04/20/2007 LITE-ON DCC RELEASE

GENERAL FORMULAS FOR FLAT-TOPPED WAVEFORMS. J.e. Sprott. Plasma Studies. University of Wisconsin

Information for Physics 1201 Midterm I Wednesday, February 20

Physics 2010 Motion with Constant Acceleration Experiment 1

1/11. Photocoupler LTV-354T series 1. DESCRIPTION. 1.1 Features. 1.2 Applications

2 nd Generation thinq! TM SiC Schottky Diode

Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1

TLE42344G. Data Sheet. Automotive Power. Low Dropout Linear Voltage Regulator. Rev. 1.0,

SKP10N60 SKB10N60, SKW10N60

Low Drop Voltage Regulator TLE

Transcription:

Applicat Nte, V., January 9 GBT wer Lsses alculat sg the ata-sheet arameters by r. ušan Gravac, Marc ürschel Autmtive wer N e v e r s t p t h i n k i n g.

GBT nverter Lsses Table f ntent Abstract...3 GBT and ide Lsses...3. nduct Lsses...3. Switchg Lsses...5.3 Lss Balance...6 3 Applicat Specific arameters...6 3. Step-dwn (Buck nverter...6 3. Step-up (Bst nverter...7 3.3 Mtr rive...9 3.4 Three-hase A Mtr rive... 3.5 Switched Reluctance Mtr rive...4 3.6 iez-electric Actuatr...5 4 nclus...6

GBT nverter Lsses Abstract The aim f this Applicat Nte is t prvide a tl fr a calculat f pwer lsses GBT-based pwer electrnics cnverters used autmtive applicats. After a general discuss n pwer lsses calculat usg data-sheet parameters, the typical applicats will be reviewed rder t extract the applicat specific parameters imprtant fr the lss balance. GBT and ide Lsses GBT and ide pwer lsses ( l, as well as pwer lsses any semicnductr cmpnent, can be divided three grups: a nduct lsses ( cnd b Switchg lsses ( c Blckg (leakage lsses ( b, nrmally beg neglected. Therefre: l c b c. nduct Lsses GBT nduct lsses can be calculated usg an GBT apprximat with a series cnnect f vltage surce (u E representg GBT n-state zer-current cllectr-emitter vltage and a cllectremitter n-state resistance (r : u E ( i ue r i The same apprximat can be used fr the anti-parallel dide, givg: u ( i u r i These imprtant parameters can be read directly frm the GBT atasheet (see fig. fr the GBT and fig. fr the ide. n rder t take the parameter variat t accunt, and thus t have a cnservative calculat, the u ce and u values read frm the diagram have t be scaled with (u cemax /u cetyp r (u max /u typ values. Thse exact values can be read frm the datasheet tables, but fr an engeerg calculat a typical safety marg value f (.-. can be used. The stantaneus value f the GBT cnduct lsses is: p T u E i u E i r i f the average GBT current value is cav, and the rms value f GBT current is crms, then the average lsses can be expressed as: T T pt dt ( u T T T E i r i dt u E cav r crms The stantaneus value f the dide cnduct lsses is: p u i u i r i F f the average dide current is av, and the rms dide current is rms, the average dide cnduct lsses acrss the itchg perid (T /f are: T p dt ( u T T T i r i dt u av r rms

GBT nverter Lsses Figure Readg the u E and r (r ce / c frm the data-sheet diagram Figure Readg the u and r (r d / frm the data-sheet diagram

GBT nverter Lsses. Switchg Lsses The circuit fr the examat f the GBT itchg lsses is presented fig. 3. t is a sgle-quadrant chpper supplyg an ductive type lad. The GBT is driven frm the driver circuit, prvidg a vltage r at its utput. The GBT ternal dide is used as a free-wheelg dide, because the majrity f applicats, such as 3-phase A mtr drives, bi-directal -mtr drives, full-bridge / cnverters, etc., the pwer electrnics cnverter cnsists f ne r mre GBT-based half-bridges. f an external freewheelg dide is used, the calculats are still valid, prvided the dide parameters are taken frm the dide data-sheet. Figure 3 GBT chpper drivg an ductive lad The turn-n energy lsses GBT (E nt can be calculated as the sum f the itch-n energy withut takg the reverse recvery prcess t accunt (E nti and the itch-n energy caused by the reverserecvery f the free-wheelg dide (E ntrr : tri tfu E nt uce( t ic dt EnMi E nmrr The peak f the reverse-recvery current can be calculated as: rrpeak Q trr rr Turn-n energy the dide cnsists mstly f the reverse-recvery energy (E n : E n tri tfu u i F dt E nrr Q 4 rr rr where rr is the vltage acrss the dide durg reverse recvery. Fr the wrst case calculat this vltage can be apprximated with a supply vltage ( rr. The itch-ff energy lsses the GBT can be calculated the similar manner. The itch-ff lsses the dide are nrmally neglected (E ff. Therefre:

GBT nverter Lsses E fft tru tfi u ce i c dt The itchg lsses the GBT and the dide are the prduct f itchg energies and the itchg frequency (f : M ( E E f nm ffm ( E E n ff f E n f.3 Lss Balance wer lsses the GBT and the free-wheelg dide can be expressed as the sum f the cnduct and itchg lsses givg: T u r ( E E T T E cav crms nt fft f u av r rms E n f 3 Applicat Specific arameters n the fllwg text the typical applicats will be revisited tgether with the typical signal wavefrms necessary fr the pwer lss balance calculat. 3. Step-dwn (Buck nverter Figures 9 and present the tplgy and the typical signals the step-dwn (buck cnverter. Figure 4 Step-dwn cnverter tplgy

GBT nverter Lsses Figure 5 Step-dwn cnverter typical signals nput parameters fr the calculat: nput vltage (, utput vltage (, utput pwer (, ductr value (L, itchg frequency (f. Output current: uty cycle cntuus cnduct mde: Output current ripple: ( L f The parameters needed fr the lss calculat can be determed accrdg t previusly calculated values as: cn cff cav crms ( ( av rms ( ( 3. Step-up (Bst nverter

GBT nverter Lsses Figures and present the tplgy and the typical signals the step-up (bst cnverter. Figure 6 Step-up cnverter tplgy Figure 7 Step-up cnverter typical signals nput parameters fr the calculat: nput vltage (, utput vltage (, utput pwer (, put pwer (, ductr value (L, itchg frequency (f. nput current: uty cycle cntuus cnduct mde: nput current ripple: L f The parameters needed fr the lss calculat can be determed accrdg t previusly calculated values as:

GBT nverter Lsses cn cff cav crms ( ( av rms ( ( 3.3 Mtr rive Figures 3 and 4 present the tplgy and the typical signals the sgle-quadrant chpper fr the mtr drive. Figure 8 Sgle-quadrant mtr drive

GBT nverter Lsses Figure 9 Sgle-quadrant mtr drive typical signals nput parameters fr the calculat: nput vltage (, utput vltage (, utput pwer (, armature ductr value (L, armature resistance value (R, mtr back-emf value (E, itchg frequency (f. Average value f the utput current: uty cycle cntuus cnduct mde: Mimum utput current: R E e e R R L f R L f m Maximum utput current: R E e e R R L f R L f max Output current ripple: max m The parameters needed fr the lss calculat can be determed accrdg t previusly calculated values as: cn

GBT nverter Lsses cff cav crms ( ( av rms ( ( Figures 5 7 present the tplgy and the typical signals the fur-quadrant chpper fr the mtr drive. Fig. 6 shws the case f the biplar WM, while the fig. 7 shws the case f the uniplar WM. Apprpriate values can be determed fllwg the same prcedure as fr the sgle-quadrant chpper, takg t accunt that fr the biplar WM the vltage excurs n the lad is. Figure Fur-quadrant mtr drive Figure Fur-quadrant mtr drive typical signals with biplar WM

GBT nverter Lsses Figure Fur-quadrant mtr drive typical signals with uniplar WM 3.4 Three-hase A Mtr rive Figures 7 and 8 present the tplgy and the typical signals the three-phase verter fr the A mtr (permanent magnet synchrnus, brushless, duct mtr drive. Figure 3 Three-phase A mtr drive nput parameters fr the calculat: nput vltage (, utput le-t-le vltage ( r utput phase vltage ( an, rms value f the utput current ( rms r utput apparent pwer (S 3 an rms, mtr displacement factr (csφ, equivalent statr ductance (L, itchg frequency (f, utput (mtr electrical frequency f and an verter amplitude mdulat dex m a Output current ripple: a ( L f eak value f the utput current:

GBT nverter Lsses rms GBT cnduct lsses: 3 cs 8 ( 8 cs ( π φ φ π a c a ce crms c cav ce T m r m u r u ide nduct lsses: 3 cs 8 ( 8 cs ( π φ φ π a a rms av m r m u r u n rder t fd a simple slut fr the itchg lss calculat, it is suppsed that the lsses generated the verter ne half-wave f the utput frequency (/( f crrespnd t the lsses generated if stead f A utput current a equivalent utput current is applied. The equivalent utput current value is: π This value can be used fr [ Tn, Tff ] the itchg lss calculat as described detail the chapter.3. Figure 4 Three-phase A mtr drive typical signals

GBT nverter Lsses 3.5 Switched Reluctance Mtr rive Figures, and present the tplgy and the typical signals the tw-quadrant chpper fr ne phase f the itched reluctance mtr drive. The cmplete cnverter cnsists f mre tw-quadrant cnverters, the number f which depends n the number f the mtr phases. The prcedure fr the pwer lss calculat is practically the same as with the mtr drive and therefre the same equats can be used. Figure 5 Tw-quadrant cnverter fr ne phase wdg f the itched reluctance mtr drive Figure 6 Switched reluctance mtr drive typical signals with biplar WM

GBT nverter Lsses Figure 7 Switched reluctance mtr drive typical signals with uniplar WM 3.6 iez-electric Actuatr Figures 3 and 4 present the tplgy and the typical signals the tw-quadrant / cnverter fr the piez-electric actuatr, used, fr example, direct ject systems. The prcedure fr the pwer lss calculat is the same as with the step-dwn (buck cnverter durg chargg and the same as with the step-up (bst cnverter durg the dischargg. Namely, while the actuatr is chargg, the system behaves like a step-dwn cnverter (GBT and ide are active and the energy flws frm t A and the energy flw reverses while the A is dischargg (GBT and ide are active. Figure 8 Tw-quadrant cnverter fr piez-electric actuatr

GBT nverter Lsses Figure 9 nverter fr piez-electric actuatr typical signals 4 nclus This Applicat Nte presented a mathematical tl fr the calculat f pwer lsses GBT-based pwer electrnics cnverters used autmtive applicats. Mathematical mdel fr the pwer lss balance calculat usg the data-sheet parameters was presented. The typical autmtive applicats were reviewed and the applicat specific parameters imprtant fr the lss balance were extracted.

Edit 9--9 ublished by nfen Technlgies AG, Am ampen -, 85579 Neubiberg, Germany nfen Technlgies AG 6. All Rights Reserved. LEGAL SLAMER THE NFORMATON GVEN N THS ALATON NOTE S GVEN AS A HNT FOR THE MLEMENTATON OF THE NFNEON TEHNOLOGES OMONENT ONLY AN SHALL NOT BE REGARE AS ANY ESRTON OR WARRANTY OF A ERTAN FNTONALTY, ONTON OR QALTY OF THE NFNEON TEHNOLOGES OMONENT. THE REENT OF THS ALATON NOTE MST VERFY ANY FNTON ESRBE HEREN N THE REAL ALATON. NFNEON TEHNOLOGES HEREBY SLAMS ANY AN ALL WARRANTES AN LABLTES OF ANY KN (NLNG WTHOT LMTATON WARRANTES OF NON-NFRNGEMENT OF NTELLETAL ROERTY RGHTS OF ANY THR ARTY WTH RESET TO ANY AN ALL NFORMATON GVEN N THS ALATON NOTE. nfrmat Fr further frmat n technlgy, delivery terms and cndits and prices please cntact yur nearest nfen Technlgies Office (www.fen.cm. Warngs ue t technical requirements cmpnents may cnta dangerus substances. Fr frmat n the types quest please cntact yur nearest nfen Technlgies Office. nfen Technlgies mpnents may nly be used life-supprt devices r systems with the express written apprval f nfen Technlgies, if a failure f such cmpnents can reasnably be expected t cause the failure f that life-supprt device r system, r t affect the safety r effectiveness f that device r system. Life supprt devices r systems are tended t be implanted the human bdy, r t supprt and/r mata and susta and/r prtect human life. f they fail, it is reasnable t assume that the health f the user r ther persns may be endangered.