Dual NPN Epitaxial Planar Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Switching time equivalent test circuits... Rating and characteristic curves... 2 2,3 4 5,6 Pinning infrmatin... 7 Marking... Suggested slder pad layut... 7 7 Packing infrmatin... 8 Reel packing... 9 Suggested thermal prfiles fr sldering prcesses... 9 High reliability test capabilities... http://www.frmsams.cm/ Page 1 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr 6mA Silicn NPN Epitaxial Planar Transistr Package utline ST-363 Frmsa MS Features High cllectr-emitterbreakdien vltage. (B CE = 4@I C=mA) Small lad switch transistr with high gain and lw stauratin vltage, is designed fr general purpse amflifier and switching applicatins at cllectr current. ffer NPN+NPN in ne package Capable f 1mW pwer dissipatin. Lead-free parts fr green partner, exceeds envirnmental standards f MIL-STD-19 /228 Suffix "-H" indicates Halgen-free part, ex.-h. Mechanical data Epxy:UL94- rated flame retardant Case : Mlded plastic, ST-363 Terminals : Slder plated, slderable per Plarity : See Diagram Munting Psitin : Any MIL-STD-7, Methd 226 Weight : Apprximated.6 gram.53(1.35).45(1.15).14(.35).6(5).4() Max. 3 2 1.87(2.2).79().16(.4).12(.3).87(2.2).79().26(.65)Typ..43(1.).35(.9).(.25).3(.8) Dimensins in inches and (millimeters).18(.46).(.26) 4 5 6 Maximum ratings (AT T A=25 C unless therwise nted) PARAMETER CNDITINS Symbl MIN. TYP. MAX. UNIT Cllectr-Base vltage CB 75 Cllectr-Emitter vltage CE 4 Emitter-Base vltage EB 6. Cllectr current I C 6 ma Ttal device dissipatin (1) T A = 25 C P D 1 mw Thermal resistance perating temperature Strage temperature Junctin t ambient R θja 833 T J T STG -55 +1-55 +1 C/W C 1.Device munted n FR-4 glass epxy printed circuit bard using the minimum recmmended ftprint http://www.frmsams.cm/ Page 2 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr Frmsa MS Characteristics (AT T A=25 C unless therwise nted) ff characteristics PARAMETER Cllectr-Base breakdwn vltage Cllectr-Emitter breakdwn vltage(3) Emitter-Base breakdwn vltage Base cutff current Cllectr cutff current Cllectr cutff current Emitter cutff current n characteristics(3) I c = ua, I E = I c = ma, I B = I E = ua, I C = CNDITINS CE = 6dc, EB(ff) = 3.dc CE = 6dc, EB(ff) = 3.dc CB = 6dc, I E = CB = 6dc, I E =, T A =125 C I C =, EB = 3.dc Symbl MIN. TYP. MAX. (BR)CB (BR) CE (BR) EB I BL I CEX 75 4 6. 2 I CB.1 I EB UNIT na ua na DC current gain PARAMETER Cllectr-Emitter saturatin vltage(3) Base-Emitter saturatin vltage(3) I c = ma, CE = I c = 1.mA, CE = 3.Pulse test : pukse width < 3uS, duty cycle < %. Small-signal characteristics PARAMETER Current-gain-bandwidth prduct(4) utput capacitance Input capacitance Input impedance ltage feeback radi Small-signal current gain utput admittance Nise figure Nise figure Switching characteristics Delay time Rise time Strage time Fall time PARAMETER CNDITINS I c = ma, CE =, T A = -55 C I c = 1mA, CE = (3) I c = 1mA, CE = 1.(3) I c = ma, CE = (3) I c = 1mA, I B = 15mA I c = ma, I B = ma I c = 1mA, I B = 15mA I c = ma, I B = ma CNDITINS I C = 2mA, CE = 2, f = MHz CB =, I E =, f = 1.MHz EB =.5, I C =, f = 1.MHz CE =, I C = 1.mA, f = 1.KHz CE =, I C = ma, f = 1.KHz CE =, I C = 1.mA, f = 1.KHz CE =, I C = ma, f = -1.KHz CE =, I C = 1.mA, f = 1.KHz CE =, I C = ma, f = -1.KHz CE =, I C = 1.mA, f = 1.KHz CE =, I C = ma, f = -1.KHz =, I = ua, RS = 1.K hms, f = 1.KHZ 4.f T is defined as the frequency at which h fe extraplates t unity. Symbl h FE CE(sat) BE(sat) Symbl C ib MIN. TYP. MAX. 35 4.6.3 1. 1.2 MIN. TYP. MAX. db CE C NF 4. CNDITINS CC = 3, BE =(ff) = -.5, I C = 1mA, I B1 = 15mA CC = 3, I C =1mA, I B1 = I B2 = 15mA f T C b h ie h re h fe h e Symbl td tr ts 75 3 5. 8. 25.8.25 1.25 CB = 2, I E = 2mA, f = 31.8MHz rb, Cc 1 75 25 3 8. 4. 3 375 35 2 MIN. TYP. MAX. 25 225 tf 6 UNIT - dc dc UNIT MHz dc pf pf dc khms -4 X - umhs ps UNIT ns http://www.frmsams.cm/ Page 3 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr Frmsa MS Switching time equivalent test circuits + 3 + 16 1. t μs Duty cycle ~ % 2Ω 1 KΩ - 2 < 2nS CS* < pf Scpe rise < 4 ns *Ttal shunt capacitance f testjig, cnnectrs, and cillscpe. Fig. 1 Delay and rise time equivalent test circuit + 3 + 16 1. t us Duty cycle ~ % 1 KΩ 2Ω CS* < pf - 14 < 2nS 1N914-4 Scpe rise < 4 ns *Ttal shunt capacitance f testjig, cnnectrs, and cillscpe. Fig. 2 Strage and fall time equivalent test circuit http://www.frmsams.cm/ Page 4 Dcument ID Issued Date Revised Date Revisin Page.
Rating and characteristic curves () hfe DC Current Gain (Nrmalized) Fig. 3 DC Current Gain 1. Cllectr Current, Ic (ma) Fig. 4 Cllect Saturatin Regin CE Cllectr-Emitter ltage (lts) 1..5.5.1 1. Cllectr Current, IB ((ma) Time (ns) 2 2 Fig. 5 Turn-n Time vs Cllectr Current tr@ CC = 3 td@ EB(ff) = td@ EB(ff) = I C/I B = T =25 C J Time (ns) 2 2 Fig. 6 Turn-ff Time vs Cllectr Current t's = ts - 1/8 tf tf CC = 3 I B1 = IB2 T =25 C J 5. 5. Cllectr Current, Ic (ma) 5. 5. Cllectr Current, Ic (ma) http://www.frmsams.cm/ Page 5 Dcument ID Issued Date Revised Date Revisin Page.
Rating and characteristic curves () NF, NISE FIGURE (db) 8. 6. 4. Fig. 7 Frequency Effects I C = 1.mA, R S = 1Ω ua, R S = 2Ω ua, R S = kω ua, R S = 4.kΩ R S = PTIMUM SURCE RESISTANCE NF, NISE FIGURE (db) 8. 6. 4. Fig. 8 Surce Resistance Effects f = 1.kHz I C = ua ua ua 1.mA.1 1 1K K K f, FREQUENCY (khz) BS, SURCE RESISTANCE (HMS) CAPAITANCE (pf) Fig. 9Capacitances 3 2 Ceb 7. 5. Ccb 3. 1. REERSE LTAGE (LTS) f T, CURRENT BANDWIDTH PRDUCT (MHz) 3 2 7 Fig. Current-Gain Bandwidth Prduct CE = 2 T =25 C J 1. Cllectr Current, Ic (ma), LTAGE (LTS).8.6.4.2 Fig. 11 "n" ltage T J =25 C BE(sat) @I C/I B = BE(n) @ CE = CE(sat) @I C/I B = 1. Cefficient (m/ C).5 -.5-1. 1.5 - Fig.12 TEMPERATURE CFFICIENTS R C fr CE(sat) R B fr BE 1. Cllectr Current, Ic (ma) -2.5 1 Cllectr Current, Ic (ma) http://www.frmsams.cm/ Page 6 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr Frmsa MS Pinning infrmatin Pin Simplified utline Symbl 3 2 1 3 2 1 4 5 6 4 5 6 Marking Type number Marking cde XX Suggested slder pad layut ST-363.25(.65).25(.65).51(1.3).75(1.9).98(2.5).24(.6).165(.42) Dimensins in inches and (millimeters) http://www.frmsams.cm/ Page 7 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr Packing infrmatin Frmsa MS P d P1 E F B W A P T D2 D1 C D W1 unit:mm Item Symbl Tlerance ST-363 Carrier width Carrier length Carrier depth Sprcket hle 13" Reel utside diameter 13" Reel inner diameter 7" Reel utside diameter 7" Reel inner diameter Feed hle diameter Sprcket hle psitin Punch hle psitin Punch hle pitch Sprcket hle pitch Embssment center verall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P P1 T W W1 min min.5.3 1. 2.36 2.4 1.2 1. - - 178. 6 13. 1.75 3. 4. 4..23 8. 11.4 Nte:Devices are packed in accr dance with EIA standar RS-481-A and specificatins listed abve. http://www.frmsams.cm/ Page 8 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr Frmsa MS Reel packing PACKAGE REEL SIZE REEL (pcs) CMPNENT SPACING (m/m) BX (pcs) INNER BX (m/m) REEL DIA, (m/m) CARTN SIZE (m/m) CARTN (pcs) APPRX. GRSS WEIGHT (kg) ST-363 7" 3, 4. 3, 183*183*123 178 382*262*387 24, 9.5 Suggested thermal prfiles fr sldering prcesses 1.Strage envirnment: Temperature=5 C~4 C Humidity=55%±25% 2.Reflw sldering f surface-munt devices TP Tp Critical Zne TL t TP Ramp-up TL Tsmax TL Tsmin Temperature ts Preheat Ramp-dwn 25 t25 C t Peak 3.Reflw sldering Time Prfile Feature Sldering Cnditin Average ramp-up rate(tl t TP) <3 /sec C Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min t max)(ts) Tsmax t TL -Ramp-upRate Time maintained abve: -Temperature(TL) -Time(tL) Peak Temperature(TP) 1 C 2 C 6~12sec <3 C/sec 217 C 6~26sec 255 C-/+5 C Time within 5 C f actual Peak Temperature(tP) ~3sec Ramp-dwn Rate Time 25 C t Peak Temperature <6 C/sec <6minutes http://www.frmsams.cm/ Page 9 Dcument ID Issued Date Revised Date Revisin Page.
Dual NPN Epitaxial Planar Transistr High reliability test capabilities Frmsa MS Item Test 1. Steady State perating Life Cnditins P D=1mW Test Duratin:hrs 2. High Temperature Reverse Bias Tj=1, CE =8% related vlage,hrs 3. Temperature Cycle -55 (15min) t 1 (15min)Air t Air Transitin Time<2sec Test Cycles:cycle 4. Autclave P=2atm Ta=121 RH=% Test Duratin:96hrs 5. High Temperature Strage Life Ta=1 Test Duratin:hrs 6. Slderability 245,5sec 7. High Temperature High Humidity Reverse Bias Ta=85, 85%RH, CE =8% related vlage,hrs 8. Resistance t Sldering Heat 26,sec http://www.frmsams.cm/ Page Dcument ID Issued Date Revised Date Revisin Page.