Thyristor Modules Thyristor/Diode Modules

Thyristor Modules Thyristor/Diode Modules I TRMS = 2x 8 I TVM = 2x 6 RM = 8-8 V SM RM Type V DSM V DRM V V Version B 8B Version B 8B 9 8 MCC 95-8 iob / io8b -8 iob / io8b 3 MCC 95-2 iob / io8b -2 iob / io8b 5 4 MCC 95-4 iob / io8b -4 iob / io8b 7 6 MCC 95-6 iob / io8b -6 iob / io8b 9 8 MCC 95-8 iob / io8b -8 iob / io8b 2 3 6 7 4 5 Symbol Conditions Maximum Ratings I TRMS, I FRMS I TVM, I FVM = M T C = 85 C; 8 sine 8 6 I TSM, I FSM = 45 C t = ms (5 Hz) = t = 8.3 ms (6 Hz) = M t = ms (5 Hz) = t = 8.3 ms (6 Hz) I 2 t = 45 C t = ms (5 Hz) = t = 8.3 ms (6 Hz) = M t = ms (5 Hz) = t = 8.3 ms (6 Hz) (di/dt) cr = M f = 5 Hz; t p = µs; 225 24 25 25 3 23 9 2 9 2 s 2 s 2 s 2 s repetitive, I T = 25 5 /µs MCC Version MCD Version MCC Version 8 3 6 7 5 4 2 3 5 4 2 3 6 5 2 3 5 2 (dv/dt) cr P GM P GV V D = 2 / 3 V DRM =.45 di G /dt =.45 /µs non repetitive, I T = I TVM 5 /µs = M ; V D = 2 / 3 V DRM V/µs R GK = ; method (linear voltage rise) = M ; t p = 3 µs I T = I T(V)M ; t p = 5 µs GM V M T stg -4...+25 25-4...+25 C C C V ISOL 5/6 Hz, RMS t = min I ISOL < m t = s M d Mounting torque (M5) Terminal connection torque (M5) 5.5 3 36 2.5-4 2.5-4 W W W V~ V~ Nm Nm Weight Typical including screws 85 g Data according to IEC 6747 and refer to a single diode unless otherwise stated. MCD Version 8 Features International standard package, JEDEC TO-24 Direct copper bonded l 2 O 3 -ceramic base plate Planar passivated chips Isolation voltage 36 V~ UL registered, E 72873 Gate-cathode twin pins for version pplications Motor control Softstart C motor controller Light, heat and control dvantages Space and weight savings Simple mounting with two screws Improved & power cycling Reduced protection circuits 26a 2 IXYS ll rights reserved - 5

Symbol Conditions Characteristic Values typ. max. I RRM, I DRM / V D = RM / V DRM = M 5 m V T, V F I T / I F = 3 = 25 C.5 V V T r t V GT T For power-loss calculations only V D = 6 V = 25 C = -4 C V D = 6 V = 25 C = -4 C = M.8 2.4 2.5 2.6 5 V GD D V D = 2 / 3 V DRM ; = M.2 I L t p = µs; V D = 6 V = 25 C =.45 ; di G /dt =.45 /µs V mw V V m m V m 45 m I H V D = 6 V; R GK = ; = 25 C m t gd V D = ½V DRM = 25 C 2 µs =.45 ; di G /dt =.45 /µs t q V D = 2 / 3 V DRM = M 85 µs dv/dt = 2 V/µs; -di/dt = /µs I T = 5 ; = V; t p = µs Q S I T / I F = 5 ; -di/dt = 6 /µs = M 7 I RM 45 R thjc R thjk d S d a per thyristor; current per module per thyristor; current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration other values see Fig. 8/9.22..42.2 2.7 9.6 5 Optional accessories for modules Coded gate/cathode twin plugs with wire length = 35 mm, gate = yellow, cathode = red Type ZY L (L = Left for pin pair 4/5) UL 758, style 385, Type ZY R (R = Right for pin pair 6/7) CS class 585, guide 46-- µc mm mm m/s 2 V G [V] t gd [µs] D... [] P GM = 2 W 6 W P GV = 8 W 25 C 25 C t p = 3 µs t p = 5 µs T ( = -4 C) T ( = C) T ( = 25 C) Fig. Gate trigger characteristics = 25 C limit typ.... [] Fig. 2 Gate trigger delay time 26a 2 IXYS ll rights reserved 2-5

Dimensions in mm ( mm =.394 ) MCC... Version B 2.8 -.8 DIN 46244 MCD... Version B 2.8 -.8 DIN 46244 +.8 3.2-2 28.5 7.5 +.4-23.5 29.7 ±.2 +.8 3.2-2 7.5 +.4-23.5 29.7 ±.2 3.5 28.5 3.5 65 x 9 65 x 9 General tolerance: DIN ISO 2768 class c General tolerance: DIN ISO 2768 class c 92 ±.5 92 ±.5 2.8 ± 4.8 ±. 5.5 ±. M5 8 ±.3 6 5 4.4 2.8 ± 4.8 ±. 5.5 ±. M5 8 ±.3 6 25 ±.3 4.4 25 ±.3 4.4 45 ±.3 45 ±.3 65 ±.3 65 ±.3 Optional accessories: Keyed gate/cathode twin plugs Wire length: 35 mm, gate = yellow, cathode = red UL 758, style 385, CS class 585, guide 46-- Type ZY L (L = Left for pin pair 4/5) Type ZY R (R = Right for pin pair 6/7) Optional accessories: Keyed gate/cathode twin plugs Wire length: 35 mm, gate = yellow, cathode = red UL 758, style 385, CS class 585, guide 46-- Type ZY L (L = Left for pin pair 4/5) MCC... Version 8B 2.8 -.8 DIN 46244 MCD... Version 8B 2.8 -.8 DIN 46244 +.8 3.2-2 28.5 7.5 +.4-23.5 29.7 ±.2 +.8 3.2-2 28.5 7.5 +.4-23.5 29.7 ±.2 3.5 3.5 65 x 9 65 x 9 General tolerance: DIN ISO 2768 class c General tolerance: DIN ISO 2768 class c 92 ±.5 92 ±.5 2.8 ± 4.8 ±. 5.5 ±. M5 8 ±.3 6 6.9 6.9 2.8 ± 4.8 ±. 5.5 ±. M5 8 ±.3 6 6.9 65 ±.3 45 ±.3 25 ±.3 65 ±.3 45 ±.3 25 ±.3 26a 2 IXYS ll rights reserved 3-5

3 5 = V 25 I TSM 25 5 [] 5 Hz 8% RM = 45 C = 25 C I 2 t [ 2 s] = 45 C I TVM 5 [] 8 sin 2 6 5 = 25 C 5... t [s] Fig. 3 Surge overload current I TSM, I FSM : Crest value, t: duration 4 t [ms] Fig. 4 I 2 t versus time (- ms) 25 5 75 25 5 T C [ C] Fig. 4a Maximum forward current at case P tot 25 5 [W] 5 5 5 I TVM, I FVM [] 8 sin 2 6 R thk.4.6.8.2.5 2 3 5 5 T a [ C] Fig. 5 Power dissipation versus on-state current & ambient (per thyristor or diode) P tot 8 6 [W] R thk.3.6.8.2.5.3.5 4 Circuit B6 3x MCC95 or 3x MCD95 3 5 5 I dvm [] T a [ C] Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient 26a 2 IXYS ll rights reserved 4-5

P tot [W] 8 6 Circuit W3 3x MCC95 or 3x MCD95 R thk.3.6.8.2.5.3.5 Fig. 7 Three phase C-controller: Power dissipation versus RMS output current and ambient 4 5 5 25 I RMS [] 5 5 T a [ C] Z thjc [].3.2.5..5 6 2 8. -3-2 - 2 t [s] Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) R thjc for various conduction angles d: d R thjc ().22 8.23 2 6.27.28 Constants for Z thjc calculation: i R thi () t i (s).66.9 2.678.477 3.456.344 Z thjk [].5.4.3.2.. -3-2 - 2 3 t [s] 6 2 8 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) R thjk for various conduction angles d: d R thjk ().42 8.43 2.45 6.47.48 Constants for Z thjk calculation: i R thi () t i (s).66.9 2.678.477 3.456.344 4.2.32 26a 2 IXYS ll rights reserved 5-5

MCC 3 MCD 3 Thyristor Modules Thyristor/Diode Modules I TRMS I TVM RM = 2x 5 = 2x 32 = 8-8 V SM RM Type V DSM V DRM V V Version Version 2 3 7 654 9 8 MCC 3-8io MCD 3-8io 3 MCC 3-2io MCD 3-2io 5 4 MCC 3-4io MCD 3-4io 7 6 MCC 3-6io MCD 3-6io 9 8 MCC 3-8io MCD 3-8io 3 6 7 5 4 2 Symbol Test Conditions Maximum Ratings I TRMS, I FRMS = M 5 I TVM, I FVM T C = 85 C; 8 sine 32 I TSM, I FSM = 45 C; t = ms (5 Hz), sine 9 = t = 8.3 ms (6 Hz), sine 98 = M t = ms (5 Hz), sine 8 = t = 8.3 ms (6 Hz), sine 86 òi 2 dt = 45 C t = ms (5 Hz), sine 42 2 s = t = 8.3 ms (6 Hz), sine 4 2 s = M t = ms (5 Hz), sine 32 2 s = t = 8.3 ms (6 Hz), sine 36 2 s (di/dt) cr = M repetitive, I T = 96 /ms f =5 Hz, t P = ms V D = 2/3 V DRM = non repetitive, I T = 32 5 /ms di G /dt = /ms (dv/dt) cr = M ; V DR = 2/3 V DRM V/ms R GK = ; method (linear voltage rise) P GM = M t P = 3 ms 2 W I T = I TVM t P = 5 ms 6 W P GV 2 W GM V -4...+4 C M 4 C T stg -4...+25 C V ISOL 5/6 Hz, RMS t = min 3 V~ I ISOL m t = s 36 V~ M d Mounting torque (M5) 2.5-5/22-44 Nm/lb.in. Terminal connection torque (M8) 2-5/6-32 Nm/lb.in. Weight Typical including screws 32 g Data according to IEC 6747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions MCC MCD 3 5 4 2 Features International standard package Direct copper bonded l2 O 3 -ceramic base plate Planar passivated chips Isolation voltage 36 V~ UL registered, E 72873 Keyed gate/cathode twin pins pplications Motor control Power converter Heat and control for industrial furnaces and chemical processes Lighting control Contactless switches dvantages Space and weight savings Simple mounting Improved and power cycling Reduced protection circuits 3 IXYS ll rights reserved - 4

MCC 3 MCD 3 Symbol Test Conditions Characteristic Values I RRM = M ; = RM ; V D = V DRM 7 m I DRM 4 m V T, V F I T, I F = 6 ; = 25 C.32 V V T For power-loss calculations only ( = 4 C).8 V r T.82 mw V GT V D = 6 V; = 25 C 2 V = -4 C 3 V T V D = 6 V; = 25 C 5 m = -4 C m V GD = M ; V D = 2/3 V DRM V D m I L = 25 C; t P = 3 ms; V D = 6 V m =.45 ; di G /dt =.45 /ms I H = 25 C; V D = 6 V; R GK = 5 m t gd = 25 C; V D = /2 V DRM 2 ms = ; di G /dt = /ms Fig. Gate trigger characteristics t q = M ; I T = 3, t P = ms; -di/dt = /ms typ. ms = V; dv/dt = 5 V/ms; V D = 2/3 V DRM Q S = 25 C; I T, I F = 4, -di/dt = 5 /ms 76 mc I RM 275 R thjc per thyristor/diode; current.2 per module other values.56 R thjk per thyristor/diode; current see Fig. 8/9.52 per module.76 d S Creepage distance on surface 2.7 mm d Strike distance through air 9.6 mm a Maximum allowable acceleration 5 m/s 2 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 35 mm, gate = yellow, cathode = red Type ZY 8L (L = Left for pin pair 4/5) UL 758, style 385, Type ZY 8R (R = right for pin pair 6/7) CS class 585, guide 46-- Dimensions in mm ( mm =.394") MCC MCD Fig. 2 Gate trigger delay time Threaded spacer for higher node/ Cathode construction: Type ZY 25, material brass 2 2 4 IXYS ll rights reserved 2-4

MCC 3 MCD 3 Fig. 3 Surge overload current I TSM, I FSM : Crest value, t: duration Fig. 4 òi 2 dt versus time (- ms) Fig. 4a Maximum forward current at case Fig. 5 Power dissipation versus onstate current and ambient (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient IXYS ll rights reserved 3-4

MCC 3 MCD 3 Fig. 7 Three phase C-controller: Power dissipation versus RMS output current and ambient.5 Z thjc..5 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) R thjc for various conduction angles d: d R thjc ().2 8 C.3 2 C.4 6 C.5 C.5 Constants for Z thjc calculation:. -3-2 - s 2 t i R thi () t i (s).3.99 2.43.68 3.947.456.2 Z thjk.5..5. -3-2 - s 2 t IXYS ll rights reserved 4-4 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) R thjk for various conduction angles d: d R thjk ().52 8 C.54 2 C.54 6 C.55 C.55 Constants for Z thjk calculation: i R thi () t i (s).3.99 2.43.68 3.947.456 4.4.36 835