SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free according to IEC6149--1 1 VPS5161 Type Package Tape and Reel BSS84P PG-SOT-3 H637:3pcs/r. Marking YBs BSS84P PG-SOT-3 H6433:1pcs/r. YBs Maximum Ratings, at T = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =5 C T =7 C Pulsed drain current T =5 C valanche energy, single pulse I D =-.17, VDD=-5V, RGS=5W I D -.17 -.14 I D puls -.68 Gate pin1 E S.6 mj valanche energy, periodic limited by T jmax E R.36 Reverse diode dv/dt I S =-.17, V DS =-48V, di/dt=-/µs, T jmax =15 C Drain pin 3 Source pin dv/dt -6 kv/µs Gate source voltage V GS ± V Power dissipation T =5 C P tot.36 W Operating and storage temperature T j, T stg -55... +15 C IEC climatic category; DIN IEC 68-1 55/15/56 ESD Class JESD-114-HBM Class Rev.7 Page 1 11-7-11
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 3) R thjs - - K/W SMD version, device on PCB: @ min. footprint @ 6 cm cooling area 1) R thj - - 35 - - 3 Electrical Characteristics, at T = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS -6 - - V V GS =, I D =-5µ Gate threshold voltage, V GS = V DS V GS(th) -1-1.5 - I D =-µ Zero gate voltage drain current V DS =-6V, V GS =, T =5 C V DS =-6V, V GS =, T =15 C I DSS µ - - -.1-1 -1-1 Gate-source leakage current I GSS - -1-1 n V GS =-V, V DS = Drain-source on-state resistance R DS(on) - 8 1 W VGS=-4.5V, I D =-.14 Drain-source on-state resistance R DS(on) - 5.8 8 V GS =-1V, I D =-.17 1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.7 Page 11-7-11
Electrical Characteristics, at T = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS *I D *R DS(on)max,.65.13 - S I D =-.14 Input capacitance C iss V GS =, V DS =-5V, - 15 19 pf Output capacitance C oss f=1mhz - 6 8 Reverse transfer capacitance C rss - 3 Turn-on delay time t d(on) V DD =-3V, V GS =-4.5V, - 6.7 1 ns Rise time t r I D =-.14, R G =5W - 16. 4.3 Turn-off delay time t d(off) - 8.6 1.9 Fall time t f -.5 3.8 Gate Charge Characteristics Gate to source charge Q gs V DD =-48V, I D =-.17 -.5.37 nc Gate to drain charge Q gd -.3.45 Gate charge total Q g V DD =-48V, I D =-.17, - 1 1.5 V GS = to -1V Gate plateau voltage V(plateau) V DD =-48V, I D =-.17 - -3.4 - V Reverse Diode Inverse diode continuous forward current I S T =5 C - - -.17 Inv. diode direct current, pulsed I SM - - -.68 Inverse diode forward voltage V SD V GS =, I F =-.17 - -.93-1.4 V Reverse recovery time t rr V R =-3V, I F =l S, - 3 34 ns Reverse recovery charge Q rr di F /dt=1/µs - 1 15 nc Rev.7 Page 3 11-7-11
1 Power dissipation P tot = f (T ).38 W Drain current I D = f (T ) parameter: V GS ³ 1 V -.18.3 Ptot.8.4..16.1 ID -.14 -.1 -.1 -.8 -.6.8 -.4.4 -. 4 6 8 1 1 C 16 T 4 6 8 1 1 C 16 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C 1-1 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 3 1 K/W -1 t p = 17.µs 1 ID -1-1 R DS(on) = V DS / I D 1 ms 1 ms ZthJ 1 1 D =.5..1-1 - DC 1 single pulse.5..1-1 -3-1 -1-1 -1 1 V -1 V DS Rev.7 Page 4 1-1 1-5 1-4 1-3 1-1 -1 1 1 1 1 s 1 4 t p 11-7-11
5 Typ. output characteristic I D = f (V DS ) parameter: T j = 5 C ID -.4 P tot =.36W l k j i h -.3 -.8 -.4 -. -.16 -.1 -.8 -.4 V GS [V] g a -.5 f b -3. c -3.5 e d -4. e -4.5 f -5. d g -5.5 h -6. i -6.5 c j -7. k -8. l -1. b a 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: V GS ; T j = 5 C RDS(on) 6 W 18 16 14 1 1 8 6 4 a V GS [V] = a -.5 b -3. b c -3.5 d -4. c e -4.5 f -5. d g -5.5 e h -6. i -6.5 BSS84P f j -7. g l h j k i k l -8. -1. -.5-1 -1.5 - -.5-3 -3.5-4 V -5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS ³ x I D x R DS(on)max parameter: T j = 5 C.4 -.4 -.8 -.1 -.16 -. -.4 -.8 -.3 -.38 I D 8 Typ. forward transconductance g fs = f(i D ) parameter: T j = 5 C.16 S.3.1 - ID.5 gfs.1..8.15.6.1.4.5. 1 3 4 V 6 - V GS.4.8.1.16. -I D Rev.7 Page 5 11-7-11
9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = -.17, V GS = -1 V W 1 1 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS.4 V RDS(on) 18 16 14 1 - VGS(th) 1.8 1.6 typ. 98% 1 8 6 98% typ 1.4 1. 1 % 4.8.6-6 - 6 1 C 18 11 Typ. capacitances C = f (V DS ) parameter: V GS =, f=1 MHz 1 T.4-6 - 6 1 C 16 T 1 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs -1 pf Ciss -1-1 C IF 1 1 Coss Crss -1 - T j = 5 C typ T j = 15 C typ T j = 5 C (98%) T j = 15 C (98%) 1 5 1 V - V DS Rev.7 Page 6-1 -3 -.4 -.8-1. -1.6 - -.4 V -3 V SD 11-7-11
13 Typ. avalanche energy E S = f (T ), parameter: I D = -.17, V DD = -5 V, R GS = 5 W 3 mj 14 Typ. gate charge V GS = f (Q Gate ) parameter: I D = -.17 pulsed; T j = 5 C -16 V -1 ES VGS -1, V DS max,8 V DS max 1.5-8 1-6 -4.5-5 45 65 85 15 15 C 165 T..4.6.8 1 1. nc 1.5 Q Gate 15 Drain-source breakdown voltage V (BR)DSS = f (T ) -7 V V(BR)DSS -68-66 -64-6 -6-58 -56-54 -6-6 1 C 18 T Rev.7 Page 7 11-7-11
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