Photocoupler Product Data Sheet LTV-852 8D52 (M, S, S-TA1, S-TA, S-TP) Series Spec No.: DS-7-96-2 Effective Date: 7/9/213 Revision: G LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technology Corp. / Optoelectronics No.9,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-66 http://www.liteon.com/opto
FEATURES * High current transfer ratio ( CTR : MIN. 1% at IF = 1mA, VCE = 2V ) * High input-output isolation voltage ( Viso = 5,Vrms ) * High collector-emitter voltage ( VCEO = 3V ) * Dual-in-line package : LTV-852 : 1-channel type LTV-8D52 : 2-channel type * Wide lead spacing package : LTV-852M : 1-channel type LTV-8D52M : 2-channel type * Surface mounting package : LTV-852S : 1-channel type LTV-8D52S : 2-channel type * Tape and reel packaging : LTV-852S-TA1, LTV-8D52S-TA1 LTV-852S-TA, LTV-8D52-TA LTV-852S-TP * Safety approval UL / TUV / CSA / FIMKO / NEMKO / DEMKO / SEMKO / VDE* approved *Required V ordering option * RoHS compliance Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 1 of 12
OUTLINE DIMENSIONS LTV-852 : LTV-8D52 : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (W: China-CZ, X : China-TJ, Y : Thailand) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 2 of 12
OUTLINE DIMENSIONS LTV-852M : LTV-8D52M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (W: China-CZ, X : China-TJ, Y : Thailand) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 3 of 12
OUTLINE DIMENSIONS LTV-852S : LTV-8D52S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (W: China-CZ, X : China-TJ, Y : Thailand) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 4 of 12
TAPING DIMENSIONS LTV-852S-TA1 : LTV-8D52S-TA1 : Description Symbol Dimensions in mm ( inches ) Tape wide W 16.3 (.63 ) Pitch of sprocket holes P 4.1 (.15 ) F 7.5.1 (.295 ) Distance of compartment P2 2.1 (.79 ) Distance of compartment to compartment P1 12.1 (.472 ) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 5 of 12
TAPING DIMENSIONS LTV-852S-TA : LTV-8D52S-TA : Description Symbol Dimensions in mm ( inches ) Tape wide W 16.3 (.63 ) Pitch of sprocket holes P 4.1 (.15 ) F 7.5.1 (.295 ) Distance of compartment P2 2.1 (.79 ) Distance of compartment to compartment P1 12.1 (.472 ) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 6 of 12
TAPING DIMENSIONS LTV-852S-TP : Description Symbol Dimensions in mm ( inches ) Tape wide W 16.3 (.63 ) Pitch of sprocket holes P 4.1 (.15 ) F 7.5.1 (.295 ) Distance of compartment P2 2.1 (.79 ) Distance of compartment to compartment P1 8.1 (.315 ) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 7 of 12
ABSOLUTE MAXIMUM RATING ( Ta = 25 C ) PARAMETER SYMBOL RATING UNIT Forward Current IF 5 ma INPUT Reverse Voltage VR 6 V Power Dissipation P 7 mw Collector - Emitter Voltage VCEO 3 V OUTPUT Emitter - Collector Voltage VECO.1 V Collector Current IC 15 ma Collector Power Dissipation PC 15 mw Total Power Dissipation Ptot 2 mw *1 Isolation Voltage Viso 5, Vrms Operating Temperature Topr -3 ~ +1 C Storage Temperature Tstg -55 ~ +125 C *2 Soldering Temperature Tsol 26 C *1. AC For 1 Minute, R.H. = 4 ~ 6% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 1 Seconds Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 8 of 12
ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25 C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Forward Voltage VF 1.2 1.4 V IF=1mA INPUT Reverse Current IR 1 A VR=4V Terminal Capacitance Ct 3 25 pf V=, f=1khz Collector Dark Current ICEO 2 na VCE=2V, IF= OUTPUT Collector-Emitter Breakdown Voltage BVCEO 3 V IC=.1mA IF= Emitter-Collector Breakdown Voltage BVECO.1 V IE=1 A IF= Collector Current IC 1 4 15 ma *1 Current Transfer Ratio CTR 1, 4, 15, % IF=1mA VCE=2V Collector-Emitter Saturation Voltage VCE(sat) 1.2 V IF=2mA IC=1mA TRANSFER CHARACTERISTICS Isolation Resistance Riso 5 1 1 1 1 11 DC5V 4 ~ 6% R.H. Floating Capacitance Cf.6 1 pf V=, f=1mhz Cut-Off Frequency fc 1 7 khz Response Time (Rise) tr 1 3 s Response Time (Fall) tf 2 1 s VCE=2V, IC=2mA RL=1, -3dB VCC=2V, IC=2mA RL=1 *1 CTR I C 1% I F Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 9 of 12
CHARACTERISTICS CURVES Fig.1 Forw ard C urrent vs. Am bient Tem perature Fig.2 C ollector P ow er D issipation vs. Am bient Tem perature Forward current I (ma) F 6 5 4 3 2 1-3 25 5 75 1 o 125 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Collector power dissipation Pc (mw) 2 15 1 5-3 2 4 6 8 1 o Fig.3 C ollector-em itter saturation Voltage vs. Forw ard current Fig.4 Forw ard C urrent vs. Forw ard V oltage Collector-emitter saturation voltage V (sat) (V) 5 4.5 4 3.5 3 2.5 2 1.5 1.5 1 Ic= 5mA 1m A 3m A 5m A 7m A 1m A 2 3 4 5 Forward current (ma) 1 1 1.5 1 C o 8 C o o 6 C o 4 C o 2 C.7.9 1.1 1.3 1.5 1.7 1.9 Forward current IF (ma) Forward voltage (V) Fig.5 C urrent Transfer R atio vs. Forw ard C urrent Fig.6 C ollector C urrent vs. C ollector-em itter Voltage Current transfer ratio CTR (%) 7 6 5 4 3 2 1 VCE= 2V Collector current Ic (ma) 1 1m A 5m A 8 3m A 6 4 2 2.5m A 2m A 1.5m A 1m A P C (M AX.) IF=.5mA.1 1 1 1 2 3 4 5 Forward current (ma) Collector-emitter voltage V CE(V) Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 1 of 12
CHARACTERISTICS CURVES Fig.7 R elative C urrent Transfer R atio vs. Am bient Tem perature Fig.8 C ollector-em itter Saturation Voltage vs. Am bient Tem perature Relative current transfer ratio (%) 1..8.6.4.2 2 4 6 IF= 1mA VCE= 2V 8 1 Collector-emitter saturation voltage V CE (sat) (V) 1.2 1.1 1..9.8.7.6.5.4.3.2 2 I F= 2m A Ic= 1mA 4 6 8 1 O Ambient temperature Ta ( C) O Ambient temperature Ta ( C) Fig.9 C ollector D ark C urrent vs. Tem perature F ig.1 R esponse T im e vs. Load R esistance Collector dark current ICEO (na) 1 1 V CE= 2V Response time ( s) 1 5 2 1 5 2 1 5 2 VCE= 2V IC= 2mA tr tf td ts 1 2 4 6 8 1 1.1 1 1 O Ambient temperature Ta ( C) Load resistance RL (k ) Fig.11 Frequency R esponse T est C ircuit for R esponse Tim e Voltage gain Av (db) -5-1 -15-2 VCE= 2V IC= 2mA R L= 1k 1 1 Vcc Inp ut O utp ut Inp ut R D R L O utp ut td tr Test C ircuit for Frequency R esponse Vcc ts tf 1% 9% -25 R D R L O utp ut.1 1 1 1 Frequency f (khz) 5 Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 11 of 12
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm 4 PIN 8 PIN Part No. : LTV-852/ 8D52 ( M, S, S-TA, S-TA1, S-TP ) Series (Rev.G, May 22 213) Page : 12 of 12
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