N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4 Vdc 1 EMITTER Emitter Base Voltage V EBO Vdc Collector Current Continuous I C 6 madc Total Device Dissipation @ T A = 5 C Derate above 5 C Total Device Dissipation @ T C = 5 C Derate above 5 C P D 65 P D 1.5 1 mw mw/ C W mw/ C TO9 CASE 9 STYLE 1 Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS T J, T stg 55 to +15 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 1 3 3 STRAIGHT LEAD BULK PACK MARKING DIAGRAM N 443 AYWW BENT LEAD TAPE & REEL AMMO PACK N443 = Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 7 March, 7 Rev. 3 1 Publication Order Number: N443/D
N443 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = 1. madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C =.1 madc, I E = ) V (BR)CBO 4 Vdc EmitterBase Breakdown Voltage (I E =.1 madc, I C = ) V (BR)EBO Vdc Base Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I BEV.1 Adc Collector Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I CEX.1 Adc ON CHARACTERISTICS DC Current Gain (I C =.1 madc, V CE = 1. Vdc) (I C = 1. madc, V CE = 1. Vdc) (I C = madc, V CE = 1. Vdc) (I C = 15 madc, V CE =. Vdc) (Note 1) (I C = 5 madc, V CE =. Vdc) (Note 1) h FE 3 6 3 CollectorEmitter Saturation Voltage (Note 1) (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V CE(sat).4.75 Vdc BaseEmitter Saturation Voltage (Note 1) (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V BE(sat).75.95 1.3 Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, V CE = Vdc, f = MHz) f T MHz CollectorBase Capacitance (V CB = Vdc, I E =, f = 1. MHz) C cb 8.5 pf EmitterBase Capacitance (V EB =.5 Vdc, I C =, f = 1. MHz) C eb 3 pf Input Impedance (I C = 1. madc, V CE = Vdc, f = 1. khz) h ie 1.5 k 15 k Voltage Feedback Ratio (I C = 1. madc, V CE = Vdc, f = 1. khz) h re.1 8. X 4 SmallSignal Current Gain (I C = 1. madc, V CE = Vdc, f = 1. khz) h fe 6 5 Output Admittance (I C = 1. madc, V CE = Vdc, f = 1. khz) h oe 1. mhos SWITCHING CHARACTERISTICS Delay Time (V CC = 3 Vdc, V BE = +. Vdc, t d 15 ns Rise Time I C = 15 madc, I B1 = 15 madc) t r ns Storage Time (V CC = 3 Vdc, I C = 15 madc, t s 5 ns Fall Time I B1 = 15 ma, I B = 15 ma) t f 3 ns 1. Pulse Test: Pulse Width 3 s, Duty Cycle.%. ORDERING INFORMATION Device Package Shipping N443 TO9 5 Units / Bulk N443G TO9 (PbFree) 5 Units / Bulk N443RLRA TO9 / Tape & Reel N443RLRAG TO9 (PbFree) / Tape & Reel N443RLRM TO9 / Ammo Pack N443RLRMG N443RLRPG TO9 (PbFree) TO9 (PbFree) / Ammo Pack / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D.
N443 SWITCHING TIME EQUIVALENT TEST CIRCUIT 3 V 3 V + V 16 V < ns 1. k to s, DUTY CYCLE = % +14 V < ns 1. k C S * < pf 16 V 1. to s, Scope rise time < 4. ns DUTY CYCLE = % + 4. V *Total shunt capacitance of test jig connectors, and oscilloscope C S * < pf Figure 1. TurnOn Time Figure. TurnOff Time TRANSIENT CHARACTERISTICS 5 C C CAPACITANCE (pf) 3 7. C eb C cb Q, CHARGE (nc) 7. 3.. 1..7.5.3. Q T Q A V CC = 3 V I C /I B =..1..3.5.7 1.. 3. 7. REVERSE VOLTAGE (VOLTS) 3.1 3 5 7 3 5 Figure 3. Capacitances Figure 4. Charge Data 3
N443 t, TIME (ns) 7 5 3 I C /I B = 7 5 t r @ V CC = 3 V t r @ V CC = V 3 t d @ V BE(off) = V t d @ V BE(off) = tr, RISE TIME (ns) V CC = 3 V I C /I B = 7. 3 5 7 3 5 Figure 5. TurnOn Time 7. 3 5 7 3 5 Figure 6. Rise Time I C /I B = ts, STORAGE TIME (ns) 7 5 3 I B1 = I B t s = t s 1/8 t f I C /I B = 3 5 7 3 5 Figure 7. Storage Time NF, NOISE FIGURE (db) 8 6 4 I C = 1. ma, R S = 43 I C = 5 A, R S = 56 I C = 5 A, R S =.7 k I C = A, R S = 1.6 k SMALLSIGNAL CHARACTERISTICS NOISE FIGURE V CE = Vdc, T A = 5 C; Bandwidth = 1. Hz R S = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (db) 8 6 4 f = 1 khz I C = 5 A A 5 A 1. ma.1..5.1..5 1.. 5 f, FREQUENCY (khz) Figure 8. Frequency Effects 5 5 1 k k 5 k k k 5 k R S, SOURCE RESISTANCE (OHMS) Figure 9. Source Resistance Effects 4
N443 h PARAMETERS V CE = Vdc, f = 1. khz, T A = 5 C This group of graphs illustrates the relationship between h fe and other h parameters for this series of transistors. To obtain these curves, a highgain and a lowgain unit were hfe, CURRENT GAIN 7 5 3 7 5 3.1..3.5.7 1.. 3. 7. Figure. Current Gain N443 UNIT 1 N443 UNIT h ie, INPUT IMPEDANCE (OHMS) selected from the N443 lines, and the same units were used to develop the correspondinglynumbered curves on each graph. k 5 k k k 5 k k 1 k 5 N443 UNIT 1 N443 UNIT.1..3.5.7 1.. 3. 7. Figure 11. Input Impedance h, VOLTAGE FEEDBACK RATIO (X 4 re ). 1..5. N443 UNIT 1 N443 UNIT.1.1..3.5.7 1.. 3. 7. Figure 1. Voltage Feedback Ratio h oe, OUTPUT ADMITTANCE ( mhos) 5 5. 1..1..3.5.7 1.. 3. 7. Figure 13. Output Admittance N443 UNIT 1 N443 UNIT 5
N443 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.. 1..7.5.3..1 V CE = 1. V V CE = V..3 T J = 15 C 5 C 55 C.5.7 1.. 3. 7. 3 5 7 3 5 Figure 14. DC Current Gain V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 1..8.6.4..5 I C = 1. ma.1..3.5 ma ma 5 ma.7.1..3.5.7 1.. 3. 7. 3 5 I B, BASE CURRENT (ma) Figure 15. Collector Saturation Region 1. T J = 5 C.5.8 V BE(sat) @ I C /I B = VC for V CE(sat) VOLTAGE (VOLTS).6.4 V BE(sat) @ V CE = V COEFFICIENT (mv/ C).5 1. 1.5. V CE(sat) @ I C /I B =. VS for V BE.1..5 1.. 5 5.5.1..5 1.. 5 5 Figure 16. On Voltages Figure 17. Temperature Coefficients 6
N443 PACKAGE DIMENSIONS TO9 (TO6) CASE 911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175.5 4.45 5. B.17. 4.3 5.33 C.15.165 3.18 4.19 D.16.1.47.533 X X D G.45.55 1.15 1.39 H.95.5.4.66 G J.15..39.5 H J K.5 1.7 V C L.5 6.35 N.8.5.4.66 SECTION XX R.115.93 1 N V.135 3.43 P..54 R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.3 5.33 C 3.18 4.19 D.4.54 G.4.8 J.39.5 K 1.7 N.4.66 P 1.5 4. R.93 V 3.43 STYLE 1: PIN 1. EMITTER. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 817 USA Phone: 33675175 or 8344386 Toll Free USA/Canada Fax: 33675176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 41 33 79 9 Japan Customer Focus Center Phone: 8135773385 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative N443/D