HARDENED PNP SILICON SWITCHING TRANSISTOR

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6 Lake Street, Lawrence, MA 01841 RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JANSM 3K Rads (Si) 2N2906AL 2N2907AL JANSD 10K Rads (Si) 2N2906AUA 2N2907AUA JANSP 30K Rads (Si) 2N2906AUB 2N2907AUB JANSL 50K Rads (Si) 2N2906AUBC 2N2907AUBC JANSR K Rads (Si) ABSOLUTE MAXIMUM RATINGS (T C = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V CEO 60 Vdc Collector-Base Voltage V CBO 60 Vdc Emitter-Base Voltage V EBO 5.0 Vdc Collector Current I C 600 madc Total Power Dissipation @ T A = +25 C (1) P T 0.5 W Operating & Storage Junction Temperature Range T op, T stg -65 to +200 C TO-18 (TO-206AA) 2N2906A, 2N2907A THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient (1) R θja 325 C/W 1. See MIL-PRF-19500/291 for derating curves. ELECTRICAL CHARACTERISTICS (T A = +25 C, unless otherwise noted) 4 PIN 2N2906AUA, 2N2907AUA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 10mAdc Collector-Base Cutoff Current V CB = 60Vdc V CB = 50Vdc Emitter-Base Cutoff Current V EB = 5.0Vdc V EB = 4.0Vdc Collector-Emitter Cutoff Current V CE = 50Vdc V (BR)CEO 60 Vdc I CBO 10 10 I EBO 10 50 μadc ηadc μadc ηadc I CES 50 ηadc 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) T4-LDS-0055 Rev. 4 (247) Page 1 of 6

6 Lake Street, Lawrence, MA 01841 ELECTRICAL CHARACTERISTICS (T A = +25 C, unless otherwise noted) ON CHARACTERISTICS (2) Forward-Current Transfer Ratio I C = 0.1mAdc, V CE = 10Vdc 75 I C = 1.0mAdc, V CE = 10Vdc 175 450 I C = 10mAdc, V CE = 10Vdc h FE I C = 150mAdc, V CE = 10Vdc 120 300 I C = 500mAdc, V CE = 10Vdc 50 Collector-Emitter Saturation Voltage I C = 150mAdc, I B = 15mAdc I C = 500mAdc, I B = 50mAdc Base-Emitter Voltage I C = 150mAdc, I B = 15mAdc I C = 500mAdc, I B = 50mAdc DYNAMIC CHARACTERISTICS V CE(sat) 0.4 1.6 V BE(sat) 0.6 1.3 2.6 Vdc Vdc Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 1.0mAdc, V CE = 10Vdc, f = 1.0kHz h fe Magnitude of Small Signal Short-Circuit Forward Current Transfer Ratio I C = 20mAdc, V CE = 20Vdc, f = MHz h fe 2.0 Output Capacitance V CB = 10Vdc, I E = 0, khz f 1.0MHz Input Capacitance V EB = 2.0Vdc, I C = 0, khz f 1.0MHz C obo 8.0 pf C ibo 30 pf SWITCHING CHARACTERISTICS Turn-On Time See MIL-PRF-19500/291 t on 45 ηs Turn-Off Time See MIL-PRF-19500/291 (2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%. t off 300 ηs T4-LDS-0055 Rev. 4 (247) Page 2 of 6

PACKAGE DIMENSIONS 1. are in inches. Symbol Inches Millimeters Note 2. Millimeters are given for general information only. Min Max Min Max 3. Beyond r (radius) maximum, TW shall be held for a minimum length CD.178.195 4.52 4.95 of.011 inch (0.28 mm). CH.170.210 4.32 5.33 4. Dimension TL measured from maximum HD. HD.209.230 5.31 5.84 5. Body contour optional within zone defined by HD, CD, and Q. LC. TP 2.54 TP 6 6. Leads at gauge plane.054 +.001 -.000 inch (1.37 +0.03-0.00 mm) LD.016.021 0.41 0.53 7,8 below seating plane shall be within.007 inch (0.18 mm) radius of LL.500.750 12.70 19.05 7,8,13 true position (TP) at maximum material condition (MMC) relative to LU.016.019 0.41 0.48 7,8 tab at MMC. L 1.050 1.27 7,8 7. Dimension LU applies between L 1 and L 2. Dimension LD applies L 2.250 6.35 7,8 between L 2 and LL minimum. Diameter is uncontrolled in L 1 and P. 2.54 beyond LL minimum. Q.030 0.76 5 8. All three leads. TL.028.048 0.71 1.22 3,4 9. The collector shall be internally connected to the case. TW.036.046 0.91 1.17 3 10. Dimension r (radius) applies to both inside corners of tab. r.010 0.25 10 11. In accordance with ASME Y14.5M, diameters are equivalent to φx α 45 TP 45 TP 6 symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. FIGURE 1. Physical dimensions (similar to TO-18) T4-LDS-0055 Rev. 4 (247) Page 3 of 6

1. are in inches. Symbol Inches Millimeters Note 2. Millimeters are given for general information only. Min Max Min Max 3. Dimension CH controls the overall package thickness. When a BL.215.225 5.46 5.71 window lid is used, dimension CH must increase by a minimum of BL2.225 5.71.010 inch (0.254 mm) and a maximum of.0 inch (1.020 mm). BW.145.155 3.68 3.93 4. The corner shape (square, notch, radius) may vary at the BW2.155 3.93 manufacturer's option, from that shown on the drawing. CH.061.075 1.55 1.90 3 5. LW2 minimum and L3 minimum and the appropriate L3.003.007 0.08 0.18 5 castellation length define an unobstructed three-dimensional space LH.029.042 0.74 1.07 traversing all of the ceramic layers in which a castellation was LL1.032.048 0.81 1.22 designed. (Castellations are required on the bottom two layers, LL2.072.088 1.83 2.23 optional on the top ceramic layer.) Dimension LW2 maximum and LS.045.055 1.14 1.39 L3 maximum define the maximum width and depth of the LW.022.028 0.56 0.71 castellation at any point on its surface. Measurement of these LW2.006.022 0.15 0.56 5 dimensions may be made prior to solder dipping. 6. The co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed.006 inch (0.15mm) for Pin no. 1 2 3 4 solder dipped leadless chip carriers. Transistor Collector Emitter Base N/C 7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions, surface mount (UA version) T4-LDS-0055 Rev. 4 (247) Page 4 of 6

UB Symbol Inches Millimeters Note Symbol Inches Millimeters Note Min Max Min Max Min Max Min Max BH.046.056 1.17 1.42 LS 1.036.0 0.91 1.02 BL.115.128 2.92 3.25 LS 2.071.079 1.81 2.01 BW.085.108 2.16 2.74 LW.016.024 0.41 0.61 CL.128 3.25 r.008.203 CW.108 2.74 r 1.012.305 LL1.022.038 0.56 0.96 r 2.022.559 LL2.017.035 0.43 0.89 1. are in inches. 2. Millimeters are given for general information only. 3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 3. Physical dimensions, surface mount (UB version) T4-LDS-0055 Rev. 4 (247) Page 5 of 6

UBC Symbol Inches Millimeters Note Symbol Inches Millimeters Note Min Max Min Max Min Max Min Max BH.046.071 1.17 1.80 LS 1.036.0 0.91 1.02 BL.115.128 2.92 3.25 LS 2.071.079 1.81 2.01 BW.085.108 2.16 2.74 LW.016.024 0.41 0.61 CL.128 3.25 r.008.203 CW.108 2.74 r 1.012.305 LL1.022.038 0.56 0.96 r 2.022.559 LL2.017.035 0.43 0.89 1. are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metalized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 4. Physical dimensions, surface mount (UBC version, ceramic lid) T4-LDS-0055 Rev. 4 (247) Page 6 of 6