VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Improved high reliability package Maximum rated values 1) Parameter Symbol Conditio min max Unit Collector-emitter voltage VCES VGE = V, Tvj 25 C 17 V DC collector current IC Tc = 8 C 16 A Peak collector current ICM tp = 1 ms, Tc = 8 C 32 A Gate-emitter voltage VGES -2 2 V Total power dissipation Ptot Tc = 25 C, per switch (IGBT) 91 W DC forward current IF 16 A Peak forward current IFRM 32 A Surge current IGBT short circuit SOA IFSM tpsc VR = V, Tvj = 125 C, tp = 1 ms, half-sinewave VCC = 12 V, VCEM CHIP 17 V VGE 15 V, Tvj 125 C 132 A 1 µs Isolation voltage Visol 1 min, f = 5 Hz 4 V Junction temperature Tvj 15 C Junction operating temperature Tvj(op) -4 125 C Case temperature Tc -4 125 C Storage temperature Tstg -4 125 C Mounting torques 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 1 Mt2 Auxiliary terminals, M4 screws 2 3 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 6747 2) For detailed mounting itructio refer to ABB document no. 5SYA 239-1 Nm
5SNA 16N171 IGBT characteristic values 3) Parameter Symbol Conditio min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V(BR)CES VGE = V, IC = 1 ma, Tvj = 25 C 17 V VCE sat IC = 16 A, VGE = 15 V Collector cut-off current ICES VCE = 17 V, VGE = V Tvj = 25 C 2. 2.3 2.6 V Tvj = 125 C 2.3 2.6 2.9 V Tvj = 25 C 8 ma Tvj = 125 C 8 ma Gate leakage current IGES VCE = V, VGE = 2 V, Tvj = 125 C -5 5 na Gate-emitter threshold voltage VGE(TO) IC = 16 ma, VCE = VGE, Tvj = 25 C 4.5 6.5 V Gate charge Qge IC = 16 A, VCE = 9 V, VGE = -15 V.. 15 V Input capacitance Cies 152 VCE = 25 V, VGE = V, f = 1 MHz, Output capacitance Coes 14.6 Tvj = 25 C Reverse trafer capacitance Cres 6.4 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current td(on) tr td(off) tf Eon Eoff ISC VCC = 9 V, IC = 16 A, RG =.82, VGE = 15 V, L = 5 nh, inductive load VCC = 9 V, IC = 16 A, RG =.82, VGE = 15 V, L = 5 nh, inductive load VCC = 9 V, IC = 16 A, VGE = ±15 V, RG =.82, L = 5 nh, inductive load VCC = 9 V, IC = 16 A, VGE = ±15 V, RG =.82, L = 5 nh, inductive load tpsc 1 μs, VGE = 15 V, Tvj = 125 C, VCC = 12 V, VCEM CHIP 17 V Tvj = 25 C 29 Tvj = 125 C 3 Tvj = 25 C 175 Tvj = 125 C 19 Tvj = 25 C 15 Tvj = 125 C 114 Tvj = 25 C 15 Tvj = 125 C 17 Tvj = 25 C 38 Tvj = 125 C 53 Tvj = 25 C 46 Tvj = 125 C 59 14.6 µc nf mj mj 72 A Module stray inductance L CE 15 nh Resistance, terminal-chip RCC +EE 3) Characteristic values according to IEC 6747 9 4) Collector-emitter saturation voltage is given at chip level TC = 25 C.1 TC = 125 C.13 mω Doc. No. 5SYA1564-2 Apr 14 page 2 of 9
5SNA 16N171 Diode characteristic values 5) Parameter Symbol Conditio min typ max Unit Forward voltage 6) VF IF = 16 A Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) Characteristic values according to IEC 6747 2 6) Forward voltage is given at chip level Irr Qrr trr Erec VCC = 9 V, IF = 16 A, VGE = 15 V, RG =.82 L = 5 nh inductive load Tvj = 25 C 1.65 2. Tvj = 125 C 1.7 2. Tvj = 25 C 19 Tvj = 125 C 14 Tvj = 25 C 39 Tvj = 125 C 69 Tvj = 25 C 62 Tvj = 125 C 83 Tvj = 25 C 28 Tvj = 125 C 48 V A µc mj Thermal properties 7) Parameter Symbol Conditio min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case Rth(j-c)IGBT.11 K/W Rth(j-c)DIODE.18 K/W IGBT thermal resistance 2) case to heatsink Diode thermal resistance 7) case to heatsink Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K.12 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K.24 K/W 2) For detailed mounting itructio refer to ABB document no. 5SYA 239-1 Mechanical properties 7) Parameter Symbol Conditio min typ max Unit Dimeio L x W x H Typical, see outline drawing 13 x 14 x 38 mm Comparative tracking index CTI 6 Clearance distance in air Surface creepage distance da ds according to IEC 6664-1 and EN 5124-1 according to IEC 6664-1 and EN 5124-1 Term. to base: 19 Term. to term: 19 Term. to base: 28.2 Term. to term: 28.2 Mass m 82 g 7) Thermal and mechanical properties according to IEC 6747 15 mm mm Doc. No. 5SYA1564-2 Apr 14 page 3 of 9
5SNA 16N171 Electrical configuration Outline drawing 2) Note: all dimeio are shown in mm 2) For detailed mounting itructio refer to ABB document no. 5SYA 239-1 This is an electrostatic seitive device, please observe the international standard IEC 6747-1, chap. IX. This product has been designed and qualified for industrial level. Doc. No. 5SYA1564-2 Apr 14 page 4 of 9
5SNA 16N171 32 32 V CE = 25 V 28 24 25 C 125 C 28 24 2 2 IC [A] 16 IC [A] 16 12 12 125 C 8 8 4 V GE = 15 V 4 25 C 1 2 3 4 5 1 2 3 4 5 6 7 8 9 1 11 12 13 V GE [V] Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical trafer characteristics, chip level 32 32 28 24 2 17V 15V 13V 11V 9V 28 24 2 17V 15V 13V 11V 9V IC [A] 16 IC [A] 16 12 12 8 8 4 T vj = 25 C 1 2 3 4 5 6 4 1 2 3 4 5 6 Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level Doc. No. 5SYA1564-2 Apr 14 page 5 of 9
5SNA 16N171 Eon, Eoff [J] 1.6 1.4 1.2 1..8 V CC = 9 V V CEM 17 V R G =.82 ohm V GE = ±15 V L = 5 nh Eon, Eoff [J] 4. 3.5 3. 2.5 2. V CC = 9 V V CEM 17 V I C = 16 A V GE = ±15 V L = 5 nh E on.6 E off E on 1.5.4 1. E off.2.5. E sw [mj] = 1.63 x 1-4 x I C 2 +.275 x I C + 258 1 2 3 4. 1 2 3 4 5 6 7 8 9 1 11 12 13 I C [A] R G [ohm] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor td(on), tr, td(off), tf [µs] 1 1.1.1 t f t r 1 2 3 4 I C [A] t d(off) t d(on) V CC = 9 V V CEM 17 V R G =.82 ohm V GE = ±15 V L = 5 nh td(on), tr, td(off), tf [µs] 1 1.1 V CC = 9 V V CEM 17 V I C = 16 A V GE = ±15 V L = 5 nh 1 2 3 4 5 6 7 8 9 1 11 12 13 R G [ohm] t d(off) t d(on) t r t f Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor Doc. No. 5SYA1564-2 Apr 14 page 6 of 9
5SNA 16N171 1 2 V CC = 9 V C ies 15 1 V CC = 13 V C [nf] C oes VGE [V] 1 1 C res 5 1 V GE = V f OSC = 1 MHz V OSC = 5 mv 5 1 15 2 25 3 35 I C = 16 A T vj = 25 C 2 4 6 8 1 12 Q g [µc] Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 1 Typical gate charge characteristics 2.5 V CC 12 V, V GE = ±15 V, R G =.82 ohm 2 1.5 ICpulse / IC 1.5 Chip Module 5 1 15 2 Fig. 11 Turn-off safe operating area (RBSOA) Doc. No. 5SYA1564-2 Apr 14 page 7 of 9
5SNA 16N171 18 16 14 V CC = 9 V R G =.82 ohm L = 5 nh I rr 8 7 6 V CC = 9 V I C = 16 A L = 5 nh I rr 16 14 12 Erec [mj], Irr [A], Qrr [µc] 12 1 8 6 4 2 Q rr E rec E rec [mj] = -4 x 1-5 x I 2 F +.314 x I F + 95 1 2 3 4 Erec [mj], Qrr [µc] 5 4 3 2 1 Q rr E rec RG = 12 Ω RG = 6.8 Ω RG = 4.7 Ω RG = 2.2 Ω RG = 1.2 Ω RG =.82 Ω RG =.56 Ω 1 2 3 4 5 6 7 8 9 1 11 1 8 6 4 2 Irr [A] I F [A] di/dt [ka/µs] Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 32 28 24 2 25 C 125 C 36 32 28 24 V CC 12 V di/dt 8 ka/µs IF [A] 16 IR [A] 2 16 12 12 8 8 4 4.5 1 1.5 2 2.5 5 1 15 2 V F [V] V R [V] Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) Doc. No. 5SYA1564-2 Apr 14 page 8 of 9
5SNA 16N171 Zth(j-c) [K/W] IGBT, DIODE.1.1.1 Z th(j-c) Diode Z th(j-c) IGBT IGBT Analytical function for traient thermal impedance: Z th (j-c) (t) = n i 1 R (1- e i 1 2 3 4 Ri(K/kW) 7.59 1.8.743.369 i(ms) 22 2.3 2.1.52 i -t/ i ) DIODE Ri(K/kW) 12.6 2.89 1.3 1.26 i(ms) 21 29.6 7.1 1.49.1.1.1.1 1 1 t [s] Fig. 16 Thermal impedance vs time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Traportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 912 Specification of environmental class for HiPak We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written coent is forbidden. Any liability for use of our products contrary to the itructio in this document is excluded. ABB Switzerland Ltd Doc. No. 5SYA1564-2 Apr 14 Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +41 ()58 586 1419 Fax +41 ()58 586 136 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors