Infrared Emitter (850 nm) and Infrared Emitter (940 nm) Version 1.0 SFH 7252

Similar documents
IR OSLUX (810nm) - 20 Version 1.1 SFH 4780S

High Power Infrared Emitter (850 nm) Version 1.5 SFH 4253 R

OSLON Black Flat (IR broad band emitter) Version 1.0 SFH 4735

High Power Infrared Emitter (940 nm) Version 1.4 SFH 4045N

High Power Infrared Emitter (850 nm) Version 1.6/ OS-IN SFH 4258

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3410R

High Speed PIN Photodiode Version 1.2 SFH 2701

Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Version 1.7 BPW 34 BS

OSLON Black Series (850 nm) - 80 Version 1.3/ acc. to OS-PCN A SFH 4713A

High Power Infrared Emitter (850 nm) Version 1.9 SFH 4250S

Narrow beam LED in MIDLED package (940 nm) Version 1.6 SFH 4646

Narrow beam LED in MIDLED package (940 nm) Version 1.6 / acc. to OS-PCN A SFH 4640

Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 2240

Infrared-Emitter (850 nm) and Si-Phototransistor Version 1.3 SFH 7250

High Power Infrared Emitter (850 nm) Version 1.0 SFH 4278S

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3710

Silicon PIN Photodiode Version 1.8 SFH 2400

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3410

Silicon Photodiode with Vλ Characteristic Version 1.3 SFH 2430

Silicon PIN Photodiode Preliminary Version 0.0 SFH DRAFT For Reference only. Subject to change without notice.

OSLON Black Series (850 nm) - 90 Version 1.4 SFH 4715AS

Silicon PIN Photodiode Version 1.3 SFH 2200

Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 2440

OSLON Black Series (940 nm) - 90 Version 1.6 SFH 4725S

Silicon NPN Phototransistor Version 1.4 SFH 3015 FA

BIOFY Sensor Version 1.1 SFH 7070

Silicon PIN Photodiode Version 1.5 BP 104 S

High Power Infrared Emitter (850 nm) Version 1.6 SFH 4232A

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

SMT Multi TOPLED Version 1.3 SFH 331-JK

Silicon PIN Photodiode with Daylight Filter; in SMT as Reverse Gullwing Version 1.5

Silicon PIN Photodiode with Daylight Blocking Filter Version 1.4 BPW 34 FSR

PLPVQ 940A. Preliminary For Reference only. Subject to change. VCSEL pulsed laser in small footprint QFN W pulsed power Preliminary Version 0.

OSLON Black Series (940 nm) - 80 Preliminary Version 0.0 SFH 4725AS A01. DRAFT For Reference only. Subject to change without notice.

= 20 ms I F. = 20 ms E e. SFH mw/cm² 6 mw/cm² Q65111A2992 SFH 4056-NP mw/cm² 6 mw/cm² Q65111A9688

Infrared Emitter (850 nm) Version 1.3 SFH 4855

BIOFY Sensor Draft Version.3 SFH7072. Draft - This design is for Reference only. Subject to change without notice. DRAFT - For reference only.

SFH Micro SIDELED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH High Power Infrared Emitter (850 nm)

Infrared Emitter (850 nm) Version 1.2 SFH 4356P. Features: Wavelength 850nm Short switching time Good spectral match to silicon photodetectors

High Power Infrared Emitter (940 nm) Version 1.4 SFH Features: High Power Infrared LED Short switching times

Infrared Emitter (850 nm) Version 1.6 SFH 4550

SFH 2200 TOPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon PIN Photodiode. Electronic Equipment

SFH OSLON Black Flat. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4735

High Power Infrared Emitter (940 nm) Version 1.3 SFH Features: High Power Infrared LED Emission angle ± 11 High radiant intensity

SFH 2700 FA CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2700 FA. Silicon PIN Photodiode

Infrared Emitter (850 nm) Version 1.4 SFH 4554

Applications For a variety of manufacturing and monitoring applications, which require beam interruption Photointerrupters

SFH 4646 MIDLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Narrow beam LED in MIDLED package (940 nm)

SFH DIL SMT Ambient Light Sensor. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2430

SFH 2716 CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon PIN Photodiode with Vλ Characteristics

SFH 4776 SYNIOS P2720. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH IR broad band emitter

SFH 3716 CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 3716

SFH 4716S. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4716S. OSLON Black Series (850 nm) - 150

BPW 34 BS DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BPW 34 BS

SFH TOPLED Lens. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon NPN Phototransistor

= 25 C Parameter Symbol Values. -40 C 100 C -40 C 100 C Forward current I F. max. 100 ma Surge current t p I FSM. max. 5 V Power consumption P tot

SFH 2400 FA. Smart DIL. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2400 FA. Silicon PIN Photodiode

SFH 4714A. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4714A. OSLON Black Series (850 nm) - 150

GaAlAs Light Emitting Diode (660 nm) Version 1.3 SFH 464 E7800

BP 104 FS DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 FS

Type Photocurrent Ordering Code V CE. = 0.01 mw/cm² I PCE

SFH 4727AS A01. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4727AS A01

BP 104 S DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 S. Silicon PIN Photodiode. LIDAR, Pre-Crash, ACC

SFH 4232A. Golden DRAGON. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4232A. High Power Infrared Emitter (850 nm)

= 20 ms I e. = 20 ms I F

Ordering Information Type: Radiant Intensity Ordering Code I e [mw/sr] I F = 50 ma, t p = 20 ms SFH ( 0.63) Q62702P5053

Type Photocurrent Ordering Code V CE. = 0.1 mw/cm² I PCE

GP PSLR31.14 DURIS S 5. Applications. Features: Produktdatenblatt Version 1.1. Architecture. Horticulture Lighting

LS G6SP. Advanced Power TOPLED. Applications. Features: Produktdatenblatt Version 1.1 LS G6SP

Silicon PIN Photodiode Version 1.3 SFH 206 K

Silicon PIN Photodiode with very short switching time Version 1.3 SFH 229

Silicon PIN Photodiode with integrated Temperature Sensor Version 1.4 SFH 2504

KW DMLN32.SB SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KW DMLN32.SB

LG L29K SMARTLED Applications. Features: Produktdatenblatt Version 1.1 LG L29K

GW PSLR31.FM DURIS S 5. Applications. Features: Produktdatenblatt Version 1.1 GW PSLR31.FM. Horticulture Lighting

Silicon PIN Photodiode Version 1.3 SFH 213

Silicon PIN Photodiode Version 1.3 BPX 65

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Version 1.6 BPW 34 B

SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1. KR DMLS Dual Binning

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

KW DPLS31.SB SYNIOS E4014. Applications. Features: Produktdatenblatt Version 1.1 KW DPLS31.SB

LS B6SP. Power SIDELED. Applications. Features: Produktdatenblatt Version 1.1 LS B6SP

Silicon PIN Photodiode Version 1.4 BPW 34

Silicon PIN Photodiode Version 1.3 SFH 203 PFA

Silicon NPN Phototransistor Version 1.3 SFH 309

KS DMLN31.23 SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KS DMLN31.23

LA G6SP - Dual binning

Silicon PIN Photodiode with Daylight Filter Version 1.5 BPW 34 FA

LUW CVBP.CE OSLON LX ECE. Applications. Features: Produktdatenblatt Version 1.1 LUW CVBP.CE. Custom Tuning Headlamps, LED & Laser & Night Vision

LR VH9F FIREFLY Applications. Features: Produktdatenblatt Version 1.1 LR VH9F

CW CBLPM4.PU. CERAMOS Gen 5. Applications. Features: Produktdatenblatt Version 1.1 CW CBLPM4.PU. Highly efficient lightsource, slim package design

KW DMLQ31.SG SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KW DMLQ31.SG

LW Y1SG. Micro SIDELED Applications. Features: Produktdatenblatt Version 1.1 LW Y1SG

LB Y8SG. Micro SIDELED Applications. Features: Produktdatenblatt Version 1.1 LB Y8SG

LG Y876. Micro SIDELED Applications. Features: Produktdatenblatt Version 1.1 LG Y876. Electronic Equipment. White Goods

LA G6SP. Advanced Power TOPLED. Applications. Features: Produktdatenblatt Version 1.1 LA G6SP

LE RTDUW S2WN. OSRAM OSTAR Stage. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LE RTDUW S2WN

LCG H9RM. OSRAM OSTAR Projection Cube. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LCG H9RM

LE R Q8WP. OSRAM OSTAR Projection Compact. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LE R Q8WP

Transcription:

216-1-7 Infrared Emitter (85 nm) and Infrared Emitter (94 nm) Version 1. SFH 7252 Features: SMT package with two IR emitter (85 nm & 94 nm) Suitable for SMT assembly Available on tape and reel emitters can be controlled separately Applications Hand vein sensors Medical sensors Smoke detectors Surveillance systems IR spectroscopy Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 6825-1 and IEC 62471. Ordering Information Type: Package: Ordering Code SFH 7252 SMT Multi TOPLED Q65111A9398 216-1-7 1

Version 1. SFH 7252 Maximum Ratings Parameter Symbol Values Unit Operating and storage temperature range T op ; T stg -4... 1 C Reverse voltage V R 5 V Forward current I F 7 ma ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-1 - HBM) V ESD 2 kv Thermal resistance junction - ambient, mounted on R thja 7 K / W PC-board (FR4) 1) page 15 Emitter 1 Forward current I F (DC) 7 ma Surge current (t p 2 µs, D = ) I FSM 1 A Power consumption P tot 14 mw Thermal resistance junction - ambient, mounted on R thja 5 K / W PC-board (FR4) 2) page 15 Emitter 2 Forward current I F (DC) 7 ma Surge current (t p 2 µs, D = ) I FSM 1 A Power consumption P tot 135 mw Thermal resistance junction - ambient, mounted on R thja 5 K / W PC-board (FR4) 2) page 15 Note: The stated maximum ratings refer to one chip, unless otherwise specified. Characteristics (T A = 25 C) Parameter Symbol Values Unit Emitter 1 Peak wavelength Centroid wavelength Spectral bandwidth at 5% of I max (typ) λ peak 86 nm (typ) λ centroid 85 nm (typ) λ 3 nm Half angle (typ) ϕ ± 6 216-1-7 2

Version 1. SFH 7252 Parameter Symbol Values Unit Dimensions of active chip area (typ) L x W.3 x.3 mm x mm Rise and fall time of I e ( 1% and 9% of I e max ) (I F = 7 ma, R L = 5 Ω) Forward voltage Forward voltage (I F = 1A, t p = 1 µs) Reverse current (V R = 5 V) Total radiant flux Radiant intensity Radiant intensity in axial direction Temperature coefficient of I e or Φ e Temperature coefficient of V F Temperature coefficient of wavelength (typ) t r, t f 12 ns (typ (max)) V F 1.6 ( 2) V (typ (max)) V F 3.6 ( 4.6) V I R not designed for reverse operation µa (typ) Φ e 5 mw (typ) I e, typ 15 mw/sr (min) I e, min 6.3 mw / sr (typ) TC I -.3 % / K (typ) TC V -.6 mv / K (typ) TC λ.3 nm / K Emitter 2 Peak emission wavelength Centroid wavelength Spectral bandwidth at 5% of I max (typ) λ peak 95 nm (typ) λ centroid 94 nm (typ) λ 42 nm Half angle (typ) ϕ ± 6 Dimensions of active chip area (typ) L x W.3 x.3 mm x mm Rise and fall times of I e ( 1% and 9% of I e max ) (I F = 7 ma, R L = 5 Ω) Forward voltage Forward voltage (I F = 1 A, t p = 1 µs) (typ) t r / t f 12 ns (typ (max)) V F 1.5 ( 1.9) V (typ (max)) V F 3.6 ( 4.6) V 216-1-7 3

Version 1. SFH 7252 Parameter Symbol Values Unit Reverse current (V R = 5 V) Total radiant flux Radiant intensity Radiant intensity in axial direction Temperature coefficient of I e or Φ e Temperature coefficient of V F Temperature coefficient of λ peak (typ (max)) I R not designed for reverse operation µa (typ) Φ e 5 mw (typ) I e, typ 15 mw/sr (min) I e, min 6.3 mw / sr (typ) TC I -.3 % / K (typ) TC V -.8 mv / K (typ) TC λ peak.3 nm / K Relative Spectral Emission (typ) I rel = f(λ), T A = 25 C 1 I rel % 8 3) page 15 OHF4132 3) page 15 Radiant Intensity I e / I e (7 ma) = f(i F ), single pulse, t p = 25 µs, T A = 25 C Ι e 1 1 Ι e (7 ma) OHF572 1 6 4 1-1 2 1-2 7 75 8 85 nm λ 95 1-3 1 1 1 1 2 ma I F 3 1 216-1-7 4

Version 1. SFH 7252 Max. Permissible Forward Current I F, max = f(t A ), R thja = 5 K / W I F 8 ma 7 6 5 4 3 2 OHF573 3) page 15 Forward Current I F = f(v F ), single pulse, t p = 1 µs, T A = 25 C I F 1 ma 2 1 5 5 3 1 1 OHF5645 1 2 4 6 8 C 1 1 1 2 3 V 4 Permissible Pulse Handling Capability I F = f(t p ), T A = 25 C, duty cycle D = parameter T A OHF574 1.1 t A P I t F D P = IF T T.9 V F.8.7.6.5.4.3 D =.5.1.2.5.1.2.5 1.2.1 1-5 -4 1 1-3 -2 1 1-1 t p 1 1 1 s 1 2 216-1-7 5

Version 1. SFH 7252 Diagrams Emitter 2 Relative Spectral Emission (typ) I rel = f(λ), T A = 25 C 1 I rel % 8 3) page 15 OHF4134 3) page 15 Radiant Intensity I e / I e (7 ma) = f(i F ), single pulse, t p = 25 µs, T A = 25 C Ι e 1 1 Ι e (7 ma) OHF572 1 6 4 1-1 2 1-2 8 85 9 95 nm 125 λ 1-3 1 1 1 1 2 ma 3 1 I F 216-1-7 6

Version 1. SFH 7252 Max. Permissible Forward Current I F, max = f(t A ), R thja = 5 K / W I F 8 ma 7 6 5 OHF573 3) page 15 Forward Current I F = f(v F ), single pulse, t p = 1 µs, T A = 25 C I F 1 ma 3 1 2 OHF5642 4 3 2 1 1 1 1 2 4 6 8 C 1 T A 1 2 3 V 4 V F Permissible Pulse Handling Capability I F = f(t p ), T A = 25 C, duty cycle D = parameter OHF574 1.1 t A P I t F D P = IF T T.9.8.7.6.5.4.3 D =.5.1.2.5.1.2.5 1.2.1 1-5 -4 1 1-3 -2 1 1-1 t p 1 1 1 s 1 2 216-1-7 7

Version 1. SFH 7252 Radiation Characteristics I rel = f(ϕ), T A = 25 C 3) page 15 4 3 2 1 OHL166 ϕ 1. 5.8 6 7 8 9.6.4.2 1 1..8.6.4 2 4 6 8 1 12 Package Outline Dimensions in mm (inch). 216-1-7 8

Version 1. SFH 7252 Pinning Pin Description 1 Cathode Emitter 2 (94nm) 2 Anode Emitter 2 (94nm) 3 Cathode Emitter 1 (85nm) 4 Anode Emitter 1 (85nm) Package SMT Multi TOPLED Approximate Weight: 34. mg Recommended Solder Pad Dimensions in mm (inch). 216-1-7 9

Version 1. SFH 7252 Reflow Soldering Profile Product complies to MSL Level 2 acc. to JEDEC J-STD-2D.1 3 C T 25 2 24 C 217 C t P t L T p OHA4525 245 C 15 t S 1 5 25 C 5 1 15 2 25 s 3 t Profile Feature Profil-Charakteristik Ramp-up rate to preheat* ) 25 C to 15 C Time t S T Smin to T Smax Ramp-up rate to peak* ) T Smax to T P Liquidus temperature Time above liquidus temperature Symbol Symbol t S T L t L Minimum 6 Pb-Free (SnAgCu) Assembly Recommendation 2 3 K/s 1 12 2 3 217 Maximum 8 1 OHA4612 Unit Einheit s K/s C s Peak temperature Time within 5 C of the specified peak temperature T P - 5 K Ramp-down rate* T P to 1 C Time 25 C to T P T P t P 245 26 1 2 3 All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range 3 6 48 C s K/s s 216-1-7 1

Version 1. SFH 7252 Taping 1.5 (.59) 4 (.157) 2 (.79) Cathode/Collector Marking 2.9 (.114) 4 (.157) 3.6 (.142) 3.5 (.138) 1.75 (.69) 8 (.315) OHAY536 Dimensions in mm (inch). Tape and Reel 8 mm tape with 2 pcs. on 18 mm reel, 8 pcs. on 33 mm reel W 1 D P P 2 F E W A N 13. ±.25 P 1 Label Direction of unreeling W 2 Direction of unreeling Leader: min. 4 mm * Trailer: min. 16 mm * *) Dimensions acc. to IEC 6286-3; EIA 481-D OHAY324 216-1-7 11

_< C). _< WET Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. Do not eat. Version 1. SFH 7252 Tape dimensions [mm] Tape dimensions in mm W P P 1 P 2 D E F 8 +.3 / -.1 4 ±.1 2 ±.5 or 4 ±.1 2 ±.5 1.5 ±.1 1.75 ±.1 3.5 ±.5 Reel dimensions [mm] Reel dimensions in mm A W N min W 1 W 2max 18 8 6 8.4 + 2 14.4 Reel dimensions in mm A W N min W 1 W 2max 33 8 6 8.4 + 2 14.4 Barcode-Product-Label (BPL) EX XAM AMP MPL LE OSRAM Opto Semiconductors ors (6P) BATCH ENO: 123456789 E234 (1T) LOT NO: 123456789 (9D) D/M: D/C: 1234 (X) PROD NO: 123456789(Q)QTY: AMD) AMD/ D C 9999 (G) GROUP: LX XXXX RoHS Compliant Pack: RXX DEMY BIN1: XX-XX-X-XXX-X ML Temp ST X XXX C X XXX X_X123_1234.1234 _123 234.1234 X XX-XX-X-X X-X-X OHA4563 Dry Packing Process and Materials OSRAM Moisture-sensitive label or print Barcode label Humidity indicator Barcode label Comparator check dot 5% 1% 15% If wet, parts still adequately dry. change desiccant If wet, examine units, if necessary bake units If wet, examine units, if necessary bake units CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at 1% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 1% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours Desiccant Humidity Indicator MIL-I-8835 OSRAM OHA539 Note: Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card. Regarding dry pack you will find further information in the internet. Here you will also find the normative 216-1-7 12

_< C). _< 11 144 Bin2: Q-1-2 Bin3: ML 2 2a 22 C R 11 (9D) D/C: 144 Bin2: Q-1-2 Bin3: ML Temp ST 2 22 C R 2a Version 1. SFH 7252 references like JEDEC. Transportation Packing and Materials Barcode label Barcode label CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at 1% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 1% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours OSRAM Opto Semiconductors (6P) BATCH NO: 2121998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 (9D) D/C: 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED Temp ST 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Opto Semiconductors (6P) BATCH NO: 2121998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Packing Sealing label OHA244 Dimensions of transportation box in mm Width Length Height 2 ± 5 352 ± 5 195 ± 5 352 ± 5 3 ± 5 33 ± 5 216-1-7 13

Version 1. SFH 7252 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 216-1-7 14

Version 1. SFH 7252 Glossary 1) both chips on 2) only one chip on 3) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 216-1-7 15

Version 1. SFH 7252 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg www.osram-os.com All Rights Reserved. 216-1-7 16