Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According to IEC 69-- efinition TrenchFET Power MOSFET 00 % R g Tested Compliant to RoHS irective 00/9/EC APPLICATIONS Load Switch for Portable evices SC-89 (6-LEAS) 6 M a rking Code G S Q XX Lot Tr a ce ab ility a nd a te Code P a rt # Code Y Y Top View Ordering Information: Si00X-T-GE (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T A = C, unless otherwise noted) Parameter Symbol Limit Unit rain-source Voltage V S 8 V Gate-Source Voltage V GS ± Continuous rain Current (T J = 0 C) a T A = C. I b, c T A = 70 C.07 b, c A Pulsed rain Current I M 6 Continuous Source-rain iode Current T A = C I S 0. b, c Maximum Power issipation a T A = C 0.6 P b, c W T A = 70 C 0. b, c Operating Junction and Storage Temperature Range T J, T stg - to 0 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, d t s 0 0 R thja C/W Steady State 0 60 Notes: a. Based on T C = C. b. Surface mounted on " x " FR board. c. t = s. d. Maximum under steady state conditions is 60 C/W. ocument Number: 7896 S0--Rev., 08-Nov-0
Si00X SPECIFICATIONS (T J = C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = 0 V, I = 0 µa 8 V V S Temperature Coefficient V S /T J 8. I = 0 µa V GS(th) Temperature Coefficient V GS(th) /T J -. mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 0 µa 0. 0.9 V Gate-Source Leakage I GSS V S = 0 V, V GS = ± V ± 00 na V S = 8 V, V GS = 0 V Zero Gate Voltage rain Current I SS V S = 8 V, V GS = 0 V, T J = 8 C 0 µa On-State rain Current a I (on) V S = V, V GS =. V 6 A V GS =. V, I =. A 0.07 0.086 rain-source On-State Resistance a R S(on) V GS =. V, I =.9 A 0.078 0.09 V GS =.8 V, I =. A 0.08 0.0 V GS =. V, I = 0.76 A 0.09 0.0 Forward Transconductance g fs V S = V, I =. A. S ynamic b Input Capacitance C iss 8 Output Capacitance C oss V S = V, V GS = 0 V, f = MHz 90 pf Reverse Transfer Capacitance C rss 0 V S = V, V GS = V, I =. A 7.7.6 Total Gate Charge Q g 7. 0.7 nc Gate-Source Charge Q gs V S = V, V GS =. V, I =. A. Gate-rain Charge Q gd.69 Gate Resistance R g f = MHz..6 Turn-On elay Time t d(on) 6.8 0. Rise Time t r V = V, R L =.6 Turn-Off elaytime t d(off) I. A, V GEN =. V, R g = 7. ns Fall Time t f 6 9 rain-source Body iode Characteristics Pulse iode Forward Current a I SM 6 A Body iode Voltage V S I S =.0 A 0.8. V Body iode Reverse Recovery Time t rr 8. 8 nc Body iode Reverse Recovery Charge Q rr.7.7 I F =.0 A, di/dt = 00 A/µs Reverse Recovery Fall Time t a 6.7 ns Reverse Recovery Rise Time t b.8 Notes: a. Pulse test; pulse width 00 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ocument Number: 7896 S0--Rev., 08-Nov-0
( i t Si00X TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) 6 V GS = V thru V.0. I - rain Current (A) V GS =. V I - rain Current (A).0..0 T C = C V GS =.0 V 0. T C = C T C = - C 0 0.0 0.6..8. V S - rain-to-source Voltage (V) Output Characteristics 0. 0.0 0.0 0. 0.8..6.0 V GS - Gate-to-Source Voltage (V) Transfer Characteristics curves vs. Temp. 000 R S(on ) - On-Resistance (Ω) 0. 0.09 0.06 V GS =. V V GS =.8 V V GS =. V V GS =. V Capacitance (pf) C - 800 600 00 00 C rss C oss C iss 0.0 0 6 I - rain Current (A) On-Resistance vs. rain Current 0 0 6 7 8 V S - rain-to-source Voltage (V) Capacitance I =. A.6 Gate-to-Source Voltage (V) - V G S V S = V V GS = 6. V R S o n ) - O n - R e s s a n ce (Normalized)...0 0.8 V GS =. V, I =. A V GS =. V, I = 0.76 A V GS =. V, I =.0 A V GS =.8 V, I =. A 0 0 6 8 0 Q g - Total Gate Charge (nc) Q g - Gate Charge 0.6-0 - 0 0 7 00 0 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: 7896 S0--Rev., 08-Nov-0
Si00X TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) 0 0.6 I =. A (A) Source Current I S - 0. 0.0 T J = 0 C T J = C R S(on ) - On-Resistance (Ω) 0. 0.08 0.0 T A = C T A = C 0.00 0.0 0. 0. 0.6 0.8.0 0.00 0 V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage V GS - Gate-to-Source Voltage (V) R S(on) vs V GS vs Temperature 0.9.0 0.8 V G S(th ) Variance (V) 0.7 0.6 0. 0. I = 0 µa P o w e r ( W ).0.0.0 0..0 0. - 0-0 0 7 00 0 T J - Temperature ( C) Threshold Voltage 0 0.00 0.0 0. 0 Time (s) Single Pulse Power 00 000 0 t ( A ) n n C u r r e a r i Limited by R S(on)* ms 0 ms 00 ms 0. s 0 s - C I 0.0 T A = C 0.00 Single Pulse BVSS Limited 0. 0 00 V S - rain-to-source Voltage (V) * V GS minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient ocument Number: 7896 S0--Rev., 08-Nov-0
l i f f t i i Si00X TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) uty Cycle = 0. N o r m a z e d E c v e T r a n s e n t T h e r m a l I m p e d a n c e e 0. 0. 0. 0.0 0.0 Notes: 0.0 P M t t t 0.00. uty Cycle, = t. Per Unit Base = R thja = 0 C/W. T JM - T A = P M Z (t) thja Single Pulse. Surface Mounted 0.000 0-0 - 0-0 - 0 00 000 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7896. ocument Number: 7896 S0--Rev., 08-Nov-0
Package Information SC-89 6-Leads (SOT-6F) E/ A e x aaa C B 6 SECTION B-B E/ C 6 E E x aaa C ETAIL A x bbb C e B 6x b ddd M C A B L A L A A SEE ETAIL A Notes. imensions in millimeters.. imension does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0. mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0. mm per side.. imensions and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. atums A, B and to be determined 0.0 mm from the lead tip.. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0. mm from the lead tip. IM. MILLIMETERS MIN. NOM. MAX. A 0.6 0.8 0.60 A 0 0.0 0.0 b 0. 0. 0.0 c 0.0 0. 0.8.0.60.70 E.0.60.70 E..0. e 0. 0.0 0. e 0.9.00.0 L 0. 0. 0.0 L 0.0 0.0 0.0 C-09-Rev. C, -Aug- WG: 880 Revision: -Aug- ocument Number: 76 For technical questions, contact: analogswitchtechsupport@vishay.com THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000
Application Note 86 RECOMMENE MINIMUM PAS FOR SC-89: 6-Lead 0.0 (.00) 0.069 (.7) 0.0 (0.798) 0.09 (0.78) 0.0 (0.00) 0.0 (0.0) 0.00 (0.00) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE ocument Number: 760 Revision: -Jan-08
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