Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead (Pb) Free Product - RoHS Compliant BP 14 S BP 14 S Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 4 nm bis 11 nm Kurze Schaltzeit (typ. 2 ns) Geeignet für Vapor-Phase Löten und IR-Reflow-Löten SMT-fähig Anwendungen Lichtschranken für Gleich- und Wechsellichtbetrieb IR-Fernsteuerungen Industrieelektronik Messen/Steuern/Regeln Features Especially suitable for applications from 4 nm to 11 nm Short switching time (typ. 2 ns) Suitable for vapor-phase and IR-reflow soldering Suitable for SMT Applications Photointerrupters IR remote controls Industrial electronics For control and drive circuits Typ Type BP 14 S Bestellnummer Ordering Code Q6511A2626 25-3-2 1
BP 14 S Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, T A = 25 C Total power dissipation Wert Value T op ; T stg 4 +1 C V R 2 V Einheit Unit P tot 15 mw Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotostrom V R = 5 V Photocurrent Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, V R = 1 V Dark current Spektrale Fotoempfindlichkeit, λ =85nm Spectral sensitivity Quantenausbeute, λ =85nm Quantum yield Leerlaufspannung, E V =1lx Open-circuit voltage Wert Value Einheit Unit I P 55 ( 4) na/lx λ S max 85 nm λ 4 11 nm A 4.84 mm 2 L B L W 2.2 2.2 mm mm ϕ ±6 Grad deg. I R 2 ( 3) na S λ.62 A/W η.9 Electrons Photon V O 36 ( 28) mv 25-3-2 2
BP 14 S Kennwerte (T A = 25 C, Normlicht A, T = 2856 K) Characteristics (T A = 25 C, standard light A, T = 2856 K) (cont d) Bezeichnung Parameter Kurzschlussstrom, E V = 1 lx Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 5 Ω; V R = 5 V; λ = 85 nm; I p = 8 µa I SC 5 µa t r, t f 2 ns Durchlassspannung, I F = 1 ma, E = V F 1.3 V Forward voltage Kapazität, V R = V, f = 1 MHz, E = C 48 pf Capacitance Temperaturkoeffizient von V O TK V 2.6 mv/k Temperature coefficient of V O Temperaturkoeffizient von I SC Temperature coefficient of I SC TK I.18 %/K Rauschäquivalente Strahlungsleistung NEP 3.6 1 14 W Noise equivalent power ----------- Hz V R = 1 V, λ = 85 nm Nachweisgrenze, V R = 1 V, λ = 85 nm Detection limit Wert Value D* 6.1 1 12 Einheit Unit cm Hz -------------------------- W 25-3-2 3
BP 14 S Relative Spectral Sensitivity S rel = f (λ) S rel 1 % OHF78 Photocurrent I P = f (E v ), V R = 5 V Open-Circuit Voltage V O = f (E v ) 1 3 µa Ι P OHF2283 1 4 mv V O Total Power Dissipation P tot = f (T A ) 16 mw P tot 14 OHF958 8 2 1 1 3 12 6 1 1 V O Ι P 1 2 1 8 4 6 2 1 1 1 4 2 4 Dark Current I R = f (V R ), E = Ι R 1 2 na 1 1 5 6 7 8 9 nm 11 λ OHF2284 1-1 1 2 3 1 1 1 1 lx E V Capacitance C = f (V R ), f = 1 MHz, E = OHF1778 6 C pf 5 4 1 4 1 Dark Current I R = f (T A ), V R = 1 V, E = Ι R 1 3 na 1 2 2 4 6 8 C 1 TA OHF82 3 1 1 1 2 1 1 1-1 2 4 6 8 1 12 14 16 V 2 V R Birectional Characteristics S rel = f (ϕ) -2 1 1-1 1 1 1 V 1 2 V R -1 1 2 4 6 8 C 1 TA 4 3 2 1 ϕ 1. OHF142 5.8 6.6 7.4 8.2 9 1 1..8.6.4 2 4 6 8 1 12 25-3-2 4
BP 14 S Maßzeichnung Package Outlines 1.2 (.47) 1.1 (.43)...1 (...4) 4.5 (.177) 4.3 (.169).9 (.35).7 (.28) 1.7 (.67) 1.5 (.59) 4. (.157) 3.7 (.146).3 (.12) Chip position 1.1 (.43).9 (.35) 6.7 (.264) 6.2 (.244)...5 1.6 (.63).2 (.8).1 (.4) ±.2 (.8) Photosensitive area Cathode lead 2.2 (.87) x 2.2 (.87) GEOY6861 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 25-3-2 5
BP 14 S Lötbedingungen Vorbehandlung nach JEDEC Level 4 Soldering Conditions Preconditioning acc. to JEDEC Level 4 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-2B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-2B) T 3 C 25 2 255 C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 1 s min 3 s max OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C 15 12 s max 1 s max Ramp Down 6 K/s (max) 1 5 Ramp Up 3 K/s (max) 25 C 5 1 15 2 25 s 3 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 25-3-2 6