, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays. Features Excellent DC Current Gain High CurrentGain Bandwidth Product These Devices are PbFree and are RoHS Compliant* AMPERE POWER TRANSISTORS NPN SILICON VOLTS, WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit CollectorEmitter Voltage CollectorBase Voltage V CEO V CB 275 375 EmitterBase Voltage V EB 6.0 Collector Current Continuous I C Adc Collector Current Peak I CM Adc Base Current I B Adc Total Device Dissipation @ T C = 25 C Derate above 25 C P D 6 W W/ C 3 BASE COLLECTOR 2, 4 1 EMITTER TO225 CASE 7709 STYLE 1 Operating and Storage Junction Temperature Range T J, T stg 65 to + 150 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 6.25 C/W MARKING DIAGRAM Y WW 2N565x G YWW 2 N565xG = Year = Work Week = Device Code x = 5 or 7 = PbFree Package *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION TO225 (PbFree) TO225 (PbFree) 500 Units / Bulk 500 Units / Bulk Semiconductor Components Industries, LLC, 13 December, 13 Rev. 12 1 Publication Order Number: 2N5655/D
, ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = 0 madc (inductive), L = 50 mh) V CEO(sus) CollectorEmitter Breakdown Voltage (I C = madc, I B = 0) (V CE = 150, I B = 0) (V CE =, I B = 0) (V CE =, V EB(off) = 1.5 ) (V CE =, V EB(off) = 1.5 ) (V CE = 150, V EB(off) = 1.5, T C = 0 C) (V CE =, V EB(off) = 1.5, T C = 0 C) (V CB = 275, I E = 0) (V CB = 375, I E = 0) Emitter Cutoff Current (V EB = 6.0, I C = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (I C = 50 madc, V CE = ) (I C = 0 madc, V CE = ) (I C = madc, V CE = ) (I C = 500 madc, V CE = ) CollectorEmitter Saturation Voltage (Note 3) (I C = 0 madc, I B = madc) (I C = madc, I B = 25 madc) (I C = 500 madc, I B = 0 madc) BaseEmitter Voltage (I C = 0 madc, V CE = ) (Note 3) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 50 madc, V CE =, f = MHz) (Note 4) Output Capacitance (V CB =, I E = 0, f = 0 khz) SmallSignal Current Gain (I C = 0 madc, V CE =, f = khz) V (BR)CEO I CEO I CEX I CBO I EBO h FE 25 15 V CE(sat) 2.5 V BE f T C ob 25 h fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data for 2N5655 Series. 3. Pulse Test: Pulse Width 0 s, Duty Cycle 2.0%. 4. f T is defined as the frequency at which h fe extrapolates to unity. madc madc Adc Adc MHz pf 2
, 40 P D, POWER DISSIPATION (WATTS) H g RELAY + 6.0 V X TO SCOPE Y 50 mh 0 50 V + - 0 0 25 50 75 0 125 150 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. IC, COLLECTOR CURRENT (AMP) 0.05 0.02 0.01 T J = 150 C d c Second Breakdown Limit Thermal Limit @ T C = 25 C Bonding Wire Limit Curves apply below rated V CEO 2N5655 2N5657 ms s 500 s 40 60 0 0 0 400 600 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 150 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 3. ActiveRegion Safe Operating Area 0 0 V CE = V V CE = 2.0 V h FE, DC CURRENT GAIN 0 70 50 T J = +150 C +0 C +25 C - 55 C 2.0 3.0 7.0 50 70 0 0 0 500 Figure 4. Current Gain 3
, V, VOLTAGE (VOLTS) 0.8 0.6 0.4 0 V BE(sat) @ I C /I B = V BE @ V CE = V V CE(sat) @ I C /I B = T J = + 25 C I C /I B = 50 0 0 0 500 Figure 5. On Voltages 0 0 C ib T J = + 25 C C, CAPACITANCE (pf) 0 70 50 C ob 2.0 50 0 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance t, TIME ( s) μ 2.0 t d t r I C /I B = V CC = 0 V, V BE(off) = 2.0 V (2N5657, only) V CC = 0 V, V BE(off) = 0 V t, TIME ( s) μ 2.0 t f I C /I B = t s V CC = 0 V 0.05 0.02 0.01 2.0 50 0 0 500 V CC = 0 V (Type 2N5657, only) 2.0 50 0 0 500 Figure 7. TurnOn Time Figure 8. TurnOff Time 4
, PACKAGE DIMENSIONS 4 TO225 CASE 7709 ISSUE AC 3 2 1 FRONT VIEW BACK VIEW P Q E L1 D A1 A PIN 4 BACKSIDE TAB L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. MILLIMETERS DIM MIN MAX A 2.40 3.00 A1 0 1.50 b 0.60 0.90 b2 1 0.88 c 0.39 0.63 D.60 11. E 7.40 7.80 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3. Q 3.80 4. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 36752175 or 8003443860 Toll Free USA/Canada Fax: 36752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 29 Japan Customer Focus Center Phone: 813581750 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N5655/D