NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 310 SFH 310 FA-2/3

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NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 31 SFH 31 FA SFH 31 SFH 31 FA Not for new design (valid till DC837, additional information see OS-PCN-26-15-A) Wesentliche Merkmale Speziell geeignet für Anwendungen im Bereich von 4 nm bis 11 nm (SFH 31) und bei 88 nm (SFH 31 FA) Hohe Linearität 3 mm-plastikbauform Features Especially suitable for applications from 4 nm to 11 nm (SFH 31) and of 88 nm (SFH 31 FA) High linearity 3 mm plastic package Anwendungen Lichtschranken für Gleich- und Wechsellichtbetrieb Industrieelektronik Messen/Steuern/Regeln Applications Photointerrupters Industrial electronics For control and drive circuits Typ Type SFH 31 SFH 31-2/3 SFH 31 FA SFH 31 FA-2/3 Bestellnummer Ordering Code Q6272P874 Q6272P3595 Q6272P1673 Q6272P3596 27-4-3 1

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 1 μs Collector surge current Verlustleistung, T A = 25 C Total power dissipation Wärmewiderstand Thermal resistance Wert Value T op ; T stg 4 + 1 C V CE 7 V I C 5 I CS 1 Einheit Unit P tot 165 mw R thja 45 K/W 27-4-3 2

Kennwerte (T A = 25 C, λ = 95 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, V CE = V, f = 1 MHz, E = Capacitance Dunkelstrom Dark current V CE = 1 V, E = Fotostrom E e =.5 mw/cm 2, V CE = 5 V E v = 1 Ix, Normlicht/standard light A, V CE = 5 V SFH 31 Wert Value SFH 31 FA λ Smax 78 88 nm λ 47 17 74 17 nm Einheit Unit A.19.19 mm 2 L B L W.65.65.65.65 mm mm ϕ ± 25 ± 25 Grad deg. C CE 1 1 pf I CEO 5 ( 5) 5 ( 5) na I PCE.4 I PCE 4.4 27-4-3 3

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 95 nm E e =.5 mw/cm 2, V CE = 5 V SFH 31: E v = 1 Ix, Normlicht/ standard light A, V CE = 5 V Anstiegszeit/Abfallzeit Rise and fall time I C = 1, V CC = 5 V, R L = 1 kω Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage I C = I PCEmin 1).3, E e =.5 mw/cm 2 I PCE I PCE Wert Value -1-2 -3-4.4.8 2.1 1) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) I PCEmin is the min. photocurrent of the specified group..63 1.25 3.4 1. 2. 5.4 1.6 3.2 t r, t f 5 7 8 12 μs 8.6 Einheit Unit V CEsat 15 15 15 15 mv Directional Characteristics S rel = f (ϕ) 27-4-3 4

T A =25 C, λ = 95 nm Relative Spectral Sensitivity, SFH 31 S rel = f (λ) Relative Spectral Sensitivity, SFH 31 FA S rel = f (λ) 1 OHF2331 I PCE = f (E e ), V CE = 5 V S rel % 8 6 4 2 Total Power Dissipation P tot = f (T A ) 2 mw P tot 16 OHF871 4 6 8 1 nm 12 λ I PCE = f (V CE ), E e = Parameter Dark Current I CEO = f (V CE ), E = 12 8 4 2 4 6 8 C 1 T A Dark Current I CEO = f (T A ), V CE = 1 V, E = Capacitance C CE = f (V CE ), f = 1 MHz I PCE = f (T A ), V CE = 5 V, normalized to 25 C 1.6 Ι PCE Ι PCE25 1.4 1.2 OHF1524 1..8.6.4.2-25 25 5 75 C 1 TA 27-4-3 5

Maßzeichnung Package Outlines 2.54 (.1) spacing Collector.6 (.24).4 (.16).7 (.28) 1.8 (.71) 1.2 (.47) 29. (1.142) 27. (1.63) Area not flat.4 (.16).8 (.31).4 (.16) 1.1 (.43).9 (.35) 4.8 (.189) 4.4 (.173) ø2.9 (.114) ø2.7 (.16) 3.7 (.146) 3.5 (.138) 6.1 (.24) 5.7 (.224) 3.4 (.134) 3.1 (.122).6 (.24).4 (.16) GEXY671 Maße in mm (inch) / Dimensions in mm (inch). Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 25 2 15 1 5 235 C... 26 C 1 C... 13 C 1. Welle 1. wave ca 2 K/s 2 K/s 1 s 5 K/s Zwangskühlung forced cooling 2. Welle 2. wave 2 K/s Normalkurve standard curve Grenzkurven limit curves OHLY598 5 1 15 2 s 25 t 27-4-3 6

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 27-4-3 7