High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers: - parallel switching capability - moderate E off increase with temperature - very tight parameter distribution PG-TO-263-3-2 (D²-PAK) (TO-263AB) High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type V CE I C E off T j Marking Package 600V 15A 200µJ 150 C G15N60HS PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 600 V DC collector current T C = 25 C T C = 100 C 27 15 Pulsed collector current, t p limited by T jmax I Cpuls 60 Turn off safe operating area V CE 600V, T j 150 C Gate-emitter voltage static transient (t p <1µs, D<0.05) Short circuit withstand time 2) V GE = 15V, V CC 400V, T j 150 C Power dissipation T C = 25 C I C - 60 V GE ±20 ±30 t SC 10 µs P tot 138 W Operating junction and storage temperature T j,t stg -55...+150 Time limited operating junction temperature for t < 150h T j(tl) 175 Soldering temperature (reflow soldering, MSL - 245 A V C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev 2.3 Oct 06
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R thjc 0.9 junction case Thermal resistance, junction ambient R thja 62 SMD version, device on PCB R thja 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V (BR)CES V GE =0V, I C =500µA 600 - - V Collector-emitter saturation voltage V CE(sat) V GE = 15V, I C =15A T j =25 C T j =150 C 2.8 3.5 3.15 4.00 Gate-emitter threshold voltage V GE(th) I C =400µA,V CE =V GE 3 4 5 Zero gate voltage collector current I CES V CE =600V,V GE =0V µa T j =25 C T j =150 C - - - - 40 2000 Gate-emitter leakage current I GES V CE =0V,V GE =20V - - 100 na Transconductance g fs V CE =20V, I C =15A - 10 S Dynamic Characteristic Input capacitance C iss V CE =25V, - 810 Output capacitance C oss V GE =0V, - 83 Reverse transfer capacitance f=1mhz - 51 C rss Gate charge Q Gate V CC =480V, I C =15A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) I C(SC) V GE =15V,t SC 10µs V CC 400V, T j 150 C pf - 80 nc L E - 7 nh - 135 A Device on 50mm50mm1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev 2.3 Oct 06
Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =25 C, - 13 Rise time t V CC =400V,I C =15A, r - 14 V GE =0/15V, Turn-off delay time t d(off) R G =23Ω - 209 Fall time t f L σ =60nH, - 15 Turn-on energy E C σ =40pF on - 0.32 Energy losses include Turn-off energy E off tail and diode - 0.21 Total switching energy reverse recovery. - 0.53 Unit ns mj Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =150 C - 11 Rise time t V CC =400V,I C =15A, r - 6 V GE =0/15V, Turn-off delay time t d(off) R G = 3.6Ω - 72 Fall time t f L σ =60nH, - 26 Turn-on energy E C σ =40pF on - 0.38 Energy losses include Turn-off energy E off tail and diode - 0.20 Total switching energy reverse recovery. - 0.58 Turn-on delay time t d(on) T j =150 C - 12 Rise time t V CC =400V,I C =15A, r - 15 V GE =0/15V, Turn-off delay time t d(off) R G = 23Ω - 235 Fall time t f L σ =60nH, - 17 Turn-on energy E C σ =40pF on - 0.48 Energy losses include Turn-off energy E off tail and diode - 0.30 Total switching energy reverse recovery. - 0.78 Unit ns mj ns mj Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 3 Rev 2.3 Oct 06
t P =5µs 6 8µs 5 4 3 2 I c T C =80 C T C =110 C 1 1A 15µs 50µs 200µs 1ms 1 I c DC 10Hz 100Hz 1kHz 10kHz 100kHz 0,1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 23Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C;V GE =15V) 140W 120W Ptot, POWER DISSIPATION 100W 80W 60W 40W 2 1 20W 0W 25 C 50 C 75 C 100 C 125 C 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 4 Rev 2.3 Oct 06
4 V GE =20V 4 V GE =20V 15V 15V 3 2 1 13V 11V 9V 7V 5V 3 2 1 13V 11V 9V 7V 5V 0V 2V 4V 6V V CE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 2V 4V 6V V CE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 150 C) T J =-55 C 4 25 C 150 C 2 0V 2V 4V 6V 8V VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V I C =3 I C =15A I C =7.5A 1,0V -50 C 0 C 50 C 100 C 150 C V GE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =10V) Figure 8. T J, JUNCTION TEMPERATURE Typical collector-emitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev 2.3 Oct 06
t d(off) 100ns t, SWITCHING TIMES 10ns t f t d(on) t r t, SWITCHING TIMES 100 ns 10 ns t d(off) t f t d(on) t r 1ns 1 2 I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T J =150 C, V CE =400V, V GE =0/15V, R G =23Ω, 1 ns 0Ω 10Ω 20Ω 30Ω 40Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T J =150 C, V CE =400V, V GE =0/15V, I C =15A, t d(off) t, SWITCHING TIMES 100ns t f t r VGE(th), GATE-EMITT TRSHOLD VOLTAGE 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V max. typ. min. t d(on) 10ns 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =400V, V GE =0/15V, I C =15A, R G =23Ω, 1,5V -50 C 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.5mA) Power Semiconductors 6 Rev 2.3 Oct 06
) E on include losses due to diode recovery ) Eon include losses due to diode recovery E, SWITCHING ENERGY LOSSES 2,0mJ 1,0mJ E on E off E, SWITCHING ENERGY LOSSES 1,0 mj 0,5 mj E on E off 0,0mJ 1 2 3 I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T J =150 C, V CE =400V, V GE =0/15V, R G =23Ω, 0,0 mj 0Ω 10Ω 20Ω 30Ω 40Ω R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T J =150 C, V CE =400V, V GE =0/15V, I C =15A, E, SWITCHING ENERGY LOSSES 0.75mJ 0.50mJ 0.25mJ ) E on include losses due to diode recovery E on E off ZthJC, TRANSIENT THERMAL RESISTANCE 10 0 K/W 10-1 K/W 10-2 K/W 10-3 K/W D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse R,(1/W) τ, (s) 0.5321 0.04968 0.2047 2.5810-3 0.1304 2.5410-4 0.0027 3.0610-4 R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 0.00mJ 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =400V, V GE =0/15V, I C =2, R G =23Ω, 10-4 K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s t P, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = t p / T) Power Semiconductors 7 Rev 2.3 Oct 06
VGE, GATE-EMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 1nF 100pF C iss C oss C rss 0V 0nC 20nC 40nC 60nC 80nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =15 A) 10pF 0V 10V 20V V CE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE =0V, f = 1 MHz) tsc, SHORT CIRCUIT WITHSTAND TIME 15µs 10µs 5µs IC(sc), short circuit COLLECTOR CURRENT 25 20 15 10 5 0µs 10V 11V 12V 13V 14V V GE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE =600V, start at T J =25 C) 10V 12V 14V 16V 18V V GE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 400V, T j 150 C) Power Semiconductors 8 Rev 2.3 Oct 06
PG-TO263-3-2 Power Semiconductors 9 Rev 2.3 Oct 06
i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =60nH and Stray capacity C σ =40pF. Published by Power Semiconductors 10 Rev 2.3 Oct 06
Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 12/7/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 11 Rev 2.3 Oct 06