Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Qualified according to JEDEC 1 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G E PGTO2473 Type V CE I C V CE(sat),Tj=25 C T j,max Marking Code Package 1200V 4 1.7V 150 C G40T120 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V C E 1200 V DC collector current I C A T C = 25 C T C = 100 C 75 40 Pulsed collector current, t p limited by T jmax I C p ul s 105 Turn off safe operating area 105 V CE 1200V, T j 150 C Gateemitter voltage V G E 20 V Short circuit withstand time 2) t S C 10 s V GE = 15V, V CC 1200V, T j 150 C Power dissipation P t o t 270 W T C = 25 C Operating junction temperature T j 40...+150 C Storage temperature T s t g 55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 1 JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Nov. 09
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient R t h J C 0.45 K/W R t h J A 40 Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Value min. typ. max. Collectoremitter breakdown voltage V ( B R ) C E S V G E =0V, I C =1.5mA 1200 V Collectoremitter saturation voltage V C E ( s a t ) V G E = 15V, I C =4 T j =25 C T j =125 C T j =150 C Gateemitter threshold voltage V G E ( t h) I C =1.5mA,V C E =V G E 5.0 5.8 6.5 Zero gate voltage collector current I C E S V C E =1200V, V G E =0V T j =25 C T j =150 C Gateemitter leakage current I G E S V C E =0V,V G E =20V 600 na Transconductance g f s V C E =20V, I C =4 21 S Integrated gate resistor R G i n t 6 Ω 1.7 2.1 2.3 2.3 0.4 4.0 Unit ma Power Semiconductors 2 Rev. 2.4 Nov. 09
Dynamic Characteristic Input capacitance C i s s V C E =25V, 2500 pf Output capacitance C o s s V G E =0V, 130 Reverse transfer capacitance C r s s f=1mhz 110 Gate charge Q G a t e V C C =960V, I C =4 Internal emitter inductance measured 5mm (0.197 in.) from case V G E =15V 203 nc L E 13 nh Short circuit collector current 1) I C ( S C ) V G E =15V,t S C 10 s V C C = 600V, T j = 25 C 210 A Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turnon delay time t d ( o n ) T j =25 C, 48 ns Rise time t V C C =600V,I C =4, r 34 V G E =0/15V, Turnoff delay time t d ( o f f ) R G =15, 480 Fall time t f 2 L ) =180nH, 70 2 Turnon energy E C ) =39pF o n 3.3 mj Energy losses include Turnoff energy E o f f tail and diode 3.2 Total switching energy E t s reverse recovery. 6.5 Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turnon delay time t d ( o n ) T j =150 C 52 ns Rise time t V C C =600V,I C =4, r 40 V G E =0/15V, Turnoff delay time t d ( o f f ) R G = 15, 580 Fall time t f 2 L ) =180nH, 120 2 Turnon energy E C ) =39pF o n 5.0 mj Energy losses include Turnoff energy E o f f tail and diode 5.4 Total switching energy E t s reverse recovery. 10.4 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Nov. 09
10 10 t p =3µs 8 6 4 T C =80 C T C =110 C I c 1 1A 10µs 50µs 150µs 500µs 2 I c 20ms DC 0,1A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 15 ) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C;V GE =15V) 7 250W 6 Ptot, POWER DISSIPATION 200W 150W 100W 5 4 3 2 50W 1 0W 25 C 50 C 75 C 100 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 4 Rev. 2.4 Nov. 09
10 10 9 9 8 V GE =17V 8 V GE =17V 7 6 5 4 3 15V 13V 11V 9V 7V 7 6 5 4 3 15V 13V 11V 9V 7V 2 2 1 1 0V 1V 2V 3V 4V 5V 6V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 1V 2V 3V 4V 5V 6V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 150 C) 10 9 8 7 6 5 4 3 2 1 T J =150 C 25 C 0V 2V 4V 6V 8V 10V 12V V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V) VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 50 C 0 C 50 C 100 C I C =8 I C =4 I C =25A I C =1 T J, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.4 Nov. 09
t d(off) 1000 ns t, SWITCHING TIMES 100ns 10ns t f t d(on) t r t, SWITCHING TIMES 100 ns 10 ns t d(off) t f t d(on) t r 1ns 2 4 6 I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T J =150 C, V CE =600V, V GE =0/15V, R G =15Ω, 1 ns R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T J =150 C, V CE =600V, V GE =0/15V, I C =4, t d(off) t, SWITCHING TIMES 100ns t f t d(on) t r VGE(th), GATEEMITT TRSHOLD VOLTAGE 7V 6V 5V 4V 3V 2V 1V max. typ. min. 10ns 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =4, R G =15Ω, 0V 50 C 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 1.5mA) Power Semiconductors 6 Rev. 2.4 Nov. 09
25,0mJ ) E on and E ts include losses due to diode recovery 15 mj ) E on and E ts include losses due to diode recovery E ts E, SWITCHING ENERGY LOSSES 20,0mJ 15,0mJ 10,0mJ 5,0mJ E ts E on E off E, SWITCHING ENERGY LOSSES 10 mj 5 mj E on E off 0,0mJ 1 2 3 4 5 6 7 I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T J =150 C, V CE =600V, V GE =0/15V, R G =15Ω, 0 mj R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T J =150 C, V CE =600V, V GE =0/15V, I C =4, 15mJ ) E on and E ts include losses due to diode recovery 15mJ ) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 10mJ 5mJ E ts E off E on E, SWITCHING ENERGY LOSSES 10mJ 5mJ E ts E off E on 0mJ 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =4, R G =15Ω, 0mJ 400V 500V 600V 700V 800V V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, T J =150 C, V GE =0/15V, I C =4, R G =15Ω, Power Semiconductors 7 Rev. 2.4 Nov. 09
C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 240V 960V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 50nC 100nC 150nC 200nC 250nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =40 A) 10pF 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) tsc, SHORT CIRCUIT WITHSTAND TIME 15µs 10µs 5µs IC(sc), short circuit COLLECTOR CURRENT 30 20 10 0µs 12V 14V 16V V GE, GATEEMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gateemitter voltage (V CE =600V, start at T J =25 C) 12V 14V 16V 18V V GE, GATEEMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j 150 C) Power Semiconductors 8 Rev. 2.4 Nov. 09
VCE, COLLECTOREMITTER VOLTAGE 600V 400V 200V V CE 6 4 2 6 4 2 I C 600V 400V 200V I C 0V 0us 0.5us 1us 1.5us V CE 0us 0.5us t, TIME t, TIME Figure 21. Typical turn on behavior (V GE =0/15V, R G =15Ω, T j = 150 C, 1us 1.5us Figure 22. Typical turn off behavior (V GE =15/0V, R G =15Ω, T j = 150 C, 0V ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 10 1 0.2 K/W 0.1 0.05 10 2 K/W R, ( K / W ), ( s ) 0.159 1.1010 1 0.02 0.133 1.5610 2 0.120 1.3510 3 0.01 0.038 1.5110 4 single pulse R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 10 3 K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = t p / T) Power Semiconductors 9 Rev. 2.4 Nov. 09
PGTO2473 Power Semiconductors 10 Rev. 2.4 Nov. 09
T (t) j 1 r1 2 r 2 r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =39pF. Power Semiconductors 11 Rev. 2.4 Nov. 09
Power Semiconductors 12 Rev. 2.4 Nov. 09
Edition 200601 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 12/7/11. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.4 Nov. 09