Preliminary Technical Information X-Class Power MOSFET IXTYNX IXTANX IXTPNX S I D R DS(on) = V = A m N-Channel Enhancement Mode TO- (IXTY) G S Symbol Test Conditions Maximum Ratings S = C to C V V DGR = C to C, R GS = M V S Continuous V M Transient V I D = C A I DM = C, Pulse Width Limited by M A I A = C A E AS = C mj dv/dt I S I DM, V DD S, C V/ns P D = C W -... + C M C T stg -... + C T L Maximum Lead Temperature for Soldering C T SOLD. mm (.in.) from Case for s C F C Mounting Force (TO-).. /... N/lb M d Mounting Torque (TO-). / Nm/lb.in Weight TO-. g TO-. g TO-. g TO- (IXTA) TO- (IXTP) Features G D S G S G = Gate D = Drain S = Source Tab = Drain International Standard Packages Low R DS(ON) and Q G Avalanche Rated Low Package Inductance Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. BS = V = μa V Advantages High Power Density Easy to Mount Space Savings (th) = = μa.. V I GSS = V, = V na I DSS = S, = V A = C A R DS(on) = V =. I D, Note m Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls IXYS CORPORATION, All Rights Reserved DSB(/)
Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max g fs = V =. I D, Note.. S R Gi Gate Input Resistance C iss pf C oss = V, = V, f = MHz 9 pf C rss. pf Effective Output Capacitance C o(er) Energy related V pf GS = V C o(tr) Time related V pf DS =. S t d(on) ns Resistive Switching Times t r ns = V, =. S =. I D t d(off) ns R G = (External) t f ns Q g(on). nc Q gs = V, =. S =. I D. nc Q gd. nc R thjc. C/W R thcs TO-. C/W IXTYNX IXTANX IXTPNX Source-Drain Diode Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max I S = V A I SM Repetitive, pulse Width Limited by M A V SD I F = I S, = V, Note. V t rr I ns F = A, -di/dt = A/μs Q RM 9 nc V I R = V RM. A Note. Pulse test, t s, duty cycle, d %. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,,9,9,,9,9,,,,,,b,,,,,,b,,b by one or more of the following U.S. patents:,,,,,,,,,9,b,,,,b,9,9,,9b,,,,9,,,,,,b,,,,,,b,,
IXTYNX IXTANX IXTPNX..... Fig.. Output Characteristics @ = o C = V V V.V 9 Fig.. Extended Output Characteristics @ = o C = V V V V.. V V..... Fig.. Output Characteristics @ = o C = V V. Fig.. R DS(on) Normalized to I D = A Value vs. Junction Temperature = V..... V V RDS(on) - Normalized.... I D = A I D = A.. 9 V.. - - - Degrees Centigrade. Fig.. R DS(on) Normalized to I D = A Value vs. Drain Current. Fig.. Maximum Drain Current vs. Case Temperature. = V. = o C RDS(on) - Normalized.... = o C........ 9 I D - Amperes. - - - Degrees Centigrade IXYS CORPORATION, All Rights Reserved
IXTYNX IXTANX IXTPNX Fig.. Input Admittance Fig.. Transconductance = - o C = o C o C - o C g f s - Siemens o C o C........ - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge = V I D = A I G = ma IS - Amperes = o C VGS - Volts = o C......9. V SD - Volts 9 Q G - NanoCoulombs Fig.. Capacitance Fig.. Output Capacitance Stored Energy Capacitance - PicoFarads Ciss Coss EOSS - MicroJoules f = MHz Crss. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTYNX IXTANX IXTPNX Fig.. Forward-Bias Safe Operating Area Fig.. Maximum Transient Thermal Impedance μs. R DS(on) Limit μs ms Z(th)JC - K / W. = o C = o C Single Pulse DC ms.,...... Pulse Width - Seconds TO- Outline TO- AA Outline L E A b L c A H A TO- Outline D E L L A C D H A E D E op Q D A A H D E OPTIONAL L L b e c L e e.min BOTTOM VIEW. - Gate, - Drain - Source.MIN.MIN..MIN LAND PATTERN RECOMMENDATION b b A - Gate, - Drain - Source L c e. [.]. [.]. [.]. [.] e. [.]. [.]. [.] EJECTOR PIN L L e c X b e X b - Gate, - Drain - Source A IXYS CORPORATION, All Rights Reserved IXYS REF: T_NX(X-RT) ---A