High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2 G2 E2C G E3E Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V V CGR T J = 25 C to 15 C, R GE = 1MΩ 3 V V GES Continuous ± V V GEM Transient ± 3 V 25 = 25 C 26 A 11 = 11 C 11 A M = 25 C = 19V, 1ms 9 A 1ms 52 A SSOA V GE = 15V, T VJ = 5 C, R G = Ω M = 9 A (RBSOA) Clamped Inductive Load 15 V P C = 25 C 5 W T J -55... +15 C T JM 15 C T stg -55... +15 C T L 1.6mm (.62 in.) from Case for 1s 3 C T SOLD Plastic Body for 1 seconds 26 C F C Mounting Force 5.. / 11..5 Nm/lb.in. V ISOL 5/6Hz, 1 Minute V~ Weight g Symbol Test Conditions Characteristic Values (T J = 25 C Unless Otherwise Specified) Min. Typ. Max. BV CES = 25μA = V 3 V V GE(th) = 25μA, V CE = V GE 3. 5. V ES V CE =. V CES = V 25 μa Note 2, T J = 5 C 1 ma I GES V CE = V = ± V ±1 na V CE(sat) = 9 = 15V, Note 1 2. 3.2 V T J = 5 C 3.5 V G3 G1 E1C3 G = Gate E = Emitter C = Collector Features G3 Isolated Tab E1C3 G1 C1 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Applications E3E G E2C G2 C2 Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits IXYS CORPORATION, All Rights Reserved DS1392A(6/)
Symbol Test Conditions Characteristic Values (T J = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = 9, V CE = 1V, Note 1 6.5 1. S (ON) V GE = V, V CE = 15V, Note 1 A C ies 9 pf C oes V CE = 25V = V, f = 1MHz 56 pf C res 19 pf Q g 62 nc Q ge = 9 = 15V, V CE = 1V 13 nc Q gc.5 nc t d(on) 6 ns Resistive Switching Times, T J = 25 C t r 1 ns = 9 V GE = 15V 1 ns V t CE = 5V, R G = 1Ω f 5 ns t d(on) 65 ns Resistive Switching Times, T J = 5 C t r 395 ns I t C = 9 = 15V d(off) 175 ns V t CE = 5V, R G = 1Ω f 53 ns R thjc 1. C/W R thcs.5 C/W R thja 3 C/W Reverse Diode Symbol Test Conditions Characteristic Values (T J = 25 C Unless Otherwise Specified) Min. Typ. Max. V F I F = A = V 2.1 V t rr I F = 6A = V, -di F /dt = 1A/μs 1. μs I RM V R = 1V = V 21 A Notes: 1. Pulse test, t 3μs, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered,35,592,931, 5,9,961 5,237,1 6,2,665 6,,65 B1 6,63,3 6,727,55 7,5,73 B2 7,157,33B2 by one or more of the following U.S. patents:,6,72 5,17,5 5,63,37 5,31,25 6,259,3 B1 6,53,33 6,71,5 B2 6,759,692 7,63,975 B2,1,16 5,3,796 5,17,117 5,6,715 6,36,72 B1 6,53,55 6,71,63 6,771,7 B2 7,71,537
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Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC V GE = 25V V 15V V GE = 25V V 1V 1 15V 1V 5V.5 1 1.5 2 2.5 3 3.5 5V 5 1 15 25 3 Fig. 3. Output Characteristics @ T J = 5ºC V GE = 25V V 15V 1. 1.6 V GE = 15V Fig.. Dependence of V CE(sat) on Junction Temperature = A 1V VCE(sat) - Normalized 1. 1.2 1. = A = 6A 5V..5 1 1.5 2 2.5 3 3.5.5.6-5 -25 25 5 75 1 5 15 T J - Degrees Centigrade 6. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance VCE - Volts 5.5 5..5. 3.5 3. 2.5 2. = A A 6A T J = 25ºC 5 7 9 11 13 15 17 19 21 23 25 V GE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 36 32 2 T J = 5ºC 25ºC - ºC 3.5..5 5. 5.5 6. 6.5 7. 7.5..5 9. V GE - Volts
1 Fig. 7. Transconductance T J = - ºC 36 32 Fig.. Forward Voltage Drop of Intrinsic Diode g f s - Siemens 1 1 6 25ºC 5ºC IF - Amperes 2 T J = 25ºC T J = 5ºC 2 5 1 15 25 3 35 5 - Amperes.5 1 1.5 2 2.5 3 V F - Volts Fig. 9. Gate Charge 1, Fig. 1. Capacitance VGE - Volts 1 1 6 V CE = 1kV = A I G = 1mA Capacitance - PicoFarads 1, 1 f = 1 MHz C ies C oes 2 1 3 5 6 Q G - NanoCoulombs C res 1 5 1 15 25 3 35 1 Fig. 13. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 2 Fig.. Maximum Transient Thermal Impedance aaa 1 1 D =.5 6 Z(th)JC - ºC / W.1 D =. D =.1 D =.5 D = t p / T tp T J = 5ºC R G = Ω dv / dt < 1V / ns 25 5 75 1 5 15 175 225 25 275 3 D =.2 T D =.1 Single Pulse.1.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS CORPORATION, All Rights Reserved
6 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 6 Fig. 1. Resistive Turn-on Rise Time vs. Collector Current 5 R G = 1Ω = 15V V CE = 5V 5 R G = 1Ω = 15V V CE = 5V t r 3 = A = A t r 3 T J = 5ºC 1 1 T J = 25ºC 25 35 5 55 65 75 5 95 15 115 5 T J - Degrees Centigrade 6 1 1 1 22 - Amperes 75 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 15 Fig.. Resistive Turn-off Switching Times vs. Junction Temperature t r 7 65 6 55 5 5 t r t d(on) - - - - T J = 5ºC = 15V V CE = 5V = A, A 1 13 1 11 1 9 t d(on) t f 7 6 5 t f - - - - R G = 1Ω = 15V V CE = 5V = A 19 1 17 35 3 7 6 3 = A 15 25 5 1 3 5 6 7 9 1 R G - Ohms 1 25 35 5 55 65 75 5 95 15 115 5 T J - Degrees Centigrade 1 Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 3 7 Fig. 1. Resistive Turn-off Switching Times vs. Gate Resistance 9 t f 1 1 6 T J = 5ºC, 25ºC t f - - - - R G = 1Ω = 15V V CE = 5V 3 26 2 1 1 1 t f 65 6 55 5 5 35 3 t f - - - - T J = 5ºC = 15V V CE = 5V = A = A 7 6 5 3 1 6 6 1 1 1 22 - Amperes IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 25 1 3 5 6 7 9 1 R G - Ohms IXYS REF: (P)6-7--B