Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings V DSS = 2 C to C V V DGR = 2 C to C, R GS = M V S Continuous V M Transient V I D2 = 2 C 42 A I DM = 2 C, Pulse Width Limited by M A I A = 2 C 2 A E AS = 2 C J dv/dt I S I DM, V DD V DSS, C 3 V/ns P D = 2 C 8 W -... + C M C T stg -... + C T L Maximum Lead Temperature for Soldering C T SOLD.6 mm (.62in.) from Case for s 2 C M d Mounting Torque.3 / Nm/lb.in Weight 6 g Features G D S International Standard Package Fast Intrinsic Rectifier Avalanche Rated Low R DS(ON) and Q G Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Tab G = Gate D = Drain S = Source Tab = Drain Applications Symbol Test Conditions Characteristic Values ( = 2 C Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = ma V (th) V DS =, I D = 4mA 3.. V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls I GSS = V, V DS = V na I DSS V DS = V DSS, = V 2 A = 2 C. ma R DS(on) = V, I D =. I D2, Note 8 m 4 IXYS CORPORATION, All Rights Reserved DS296C(7/4)
Symbol Test Conditions Characteristic Values ( = 2 C Unless Otherwise Specified) Min. Typ. Max. TO-247 (IXFH) Outline g fs V DS = V, I D =. I D2, Note 2 42 S C iss pf C oss = V, V DS = 2V, f = MHz pf C rss 2.8 pf R Gi Gate Input Resistance. t d(on) 32 ns t r Resistive Switching Times 23 ns t d(off) = V, V DS =. V DSS, I D =. I D2 ns t f R G = (External) 7 ns Q g(on) 78 nc Q gs = V, V DS =. V DSS, I D =. I D2 23 nc Q gd nc R thjc. C/W R thcs.2 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 2 C Unless Otherwise Specified) Min. Typ. Max. I S = V 42 A 2 3 Terminals: - Gate 3 - Source e P 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7.3.8.9 A 2.2 2.4.87.2 A 2 2.2 2.6.9.98 b..4.. b.6 2.3.6.84 b 2 2.87 3.2.3.23 C.4.8.6.3 D.8 2.46.89.84 E.7 6.26.6.6 e..72..22 L 9.8.32.78.8 L 4..77 P 3. 3.6..44 Q.89 6..232.22 R 4.32.49.7.26 S 6. BSC 242 BSC I SM Repetitive, Pulse Width Limited by M 68 A V SD I F = I S, = V, Note.3 V t rr 2 ns I I F = 2A, -di/dt = A/μs RM 2.4 A Q RM V R = V, = V.4 μc Note. Pulse test, t s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,83,92 4,93,844,49,96,237,48 6,62,66 6,4,6 B 6,683,344 6,727,8 7,,734 B2 7,7,338B2 by one or more of the following U.S. patents: 4,8,72,7,8,63,7,38,2 6,29,23 B 6,34,343 6,7, B2 6,79,692 7,63,97 B2 4,88,6,34,796,87,7,486,7 6,6,728 B 6,83, 6,7,463 6,77,478 B2 7,7,37
Fig.. Output Characteristics @ = 2ºC Fig. 2. Extended Output Characteristics @ = 2ºC 4 = V 7V 8 7 = V 3 2 6V 7V 6V V V 2 3 4 6 7 8 9 2 4 Fig. 3. Output Characteristics @ = 2ºC = V 7V 3.4 3. Fig. 4. R DS(on) Normalized to I D = 2A Value vs. Junction Temperature = V 3 2 6V V RDS(on) - Normalized 2.6 2.2.8.4 I D = 42A I D = 2A. 4V 2 4 6 8 2 4 6 8 22 24.6.2 - -2 2 7 2 - Degrees Centigrade Fig.. R DS(on) Normalized to I D = 2A Value vs. Drain Current 4 Fig. 6. Maximum Drain Current vs. Case Temperature 3. 2.6 = V = 2ºC 3 RDS(on) - Normalized 2.2.8.4 = 2ºC 2..6 7 8 I D - Amperes - -2 2 7 2 - Degrees Centigrade 4 IXYS CORPORATION, All Rights Reserved
Fig. 7. Input Admittance Fig. 8. Transconductance 7 8 = - ºC 7 = 2ºC 2ºC - ºC g f s - Siemens 2ºC 2ºC 3. 4. 4... 6. 6. 7. - Volts 7 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 9 8 V DS = V I D = 2A I G = ma IS - Amperes 8 VGS - Volts 7 6 4 = 2ºC 3 = 2ºC 2.3.4..6.7.8.9...2 V SD - Volts 7 8 Q G - NanoCoulombs Fig.. Capacitance Fig. 2. Forward-Bias Safe Operating Area, C iss R DS(on) Limit µs Capacitance - PicoFarads, C oss C rss f = MHz 2 3 = ºC = 2ºC Single Pulse, ms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 2. Maximum Transient Thermal Impedance.2 Fig. 3. Maximium Transient Thermal Impedance aaaa. Z(th)JC - ºC / W...... Pulse Width - Seconds 4 IXYS CORPORATION, All Rights Reserved IXYS REF: F_42PP3(W7)3-24-
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