Advance Technical Information High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) C G EC3 Symbol Test Conditions Maximum Ratings G3 C2 G2 E2C V CES = 25 C to 5 C 3 V V CGR = 25 C to 5 C, R GE = M 3 V V GES Continuous ± V V GEM Transient ± 3 V 25 = 25 C 3 A 9 = 9 C 22 A M = 25 C, ms 5 A SSOA V GE = 5V, T VJ = 5 C, R G = 5 M = A (RBSOA) Clamped Inductive Load V CES 5 V T SC V GE = 5V, = 5 C, (SCSOA) R G = 52, V CE = 5V, Non-Repetitive μs P C = 25 C 5 W -55... +5 C M 5 C T stg -55... +5 C T L Maximum Lead Temperature for Soldering 3 C T SOLD Plastic Body for s 26 C F C Mounting Force 5.. /..5 N/lb V ISOL 5/6Hz, minute V~ Weight g G E3E V CES = 3V 9 = 22A V CE(sat) 2.7V C G3 G EC3 G3 Isolated Tab EC3 G C C2 G2 E2C G E3E E3E G E2C G2 C2 G = Gate E = Emitter C = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BV CES = 25μA, V GE = V 3 V V GE(th) = 25μA, V CE = V GE 3. 5. V ES V CE = V CES, V GE = V 35 μa Note 2, = 5 C.5 ma I GES V CE = V, V GE = ± V ± na V CE(sat) = 5V, Note 2.2 2.7 V = 5 C 2.7 V Advantages Low Gate Drive Requirement High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits IXYS CORPORATION, All Rights Reserved DS627(9/)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = 22A, V CE = V, Note 3 22 S C ies 2 pf C oes V CE = 25V, V GE = V, f = MHz 5 pf C res 3 pf Q g(on) nc Q ge = 5V, V CE = 5V 3 nc Q gc 5 nc t d(on) 6 ns Resistive Switching Times, T t J = 25 C r 36 ns I t C = 5V d(off) 5 ns V t CE = 96V, R G = 5 f ns t d(on) 3 ns Resistive Switching Times, = 5 C t r 7 ns I t C = 5V d(off) 2 ns V t CE = 96V, R G = 5 f 5 ns R thjc.3 C/W R thcs.5 C/W R thja 3 C/W Reverse Diode Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max V F I F = V, Note 2.7 V t rr. μs I F = A, V GE = V, -di F /dt = A/μs I RM 3 A V R = V, V GE = V Q RM 2 μc Notes:. Pulse test, t 3 s, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Additional provisions for lead-to-lead voltage isolation are required at V CE > V. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered,35,592,93, 5,9,96 5,237, 6,2,665 6,,65 B 6,63,3 6,727,55 7,5,73 B2 7,57,33B2 by one or more of the following U.S. patents:,5,72 5,7,5 5,63,37 5,3,25 6,259,3 B 6,53,33 6,7,5 B2 6,759,692 7,63,975 B2,,6 5,3,796 5,7,7 5,6,75 6,36,72 B 6,53,55 6,7,63 6,77,7 B2 7,7,537
Fig.. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC 36 32 2 2 V GE = 25V 5V V 9V 7V 25 5 V GE = 25V 2V 9V 7V 5V 3V V 9V 5 5V..5..5 2. 2.5 3. 3.5 7V 5 5 25 3 36 32 2 2 Fig. 3. Output Characteristics @ = 5ºC V GE = 25V 9V 5V 3V V 9V 7V VCE(sat) - Normalized..6..2. V GE = 5V Fig.. Dependence of V CE(sat) on Junction Temperature = A = 22A. = A 5V..5..5 2. 2.5 3. 3.5..6-5 -25 25 5 75 5 5 - Degrees Centigrade 6 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 Fig. 6. Input Admittance 5 = 25ºC 6 5 VCE - Volts 3 = A 3 2 22A A =5ºC 25ºC - ºC 6 7 9 3 5 V GE - Volts 3.5..5 5. 5.5 6. 6.5 7. 7.5..5 9. V GE - Volts IXYS CORPORATION, All Rights Reserved
Fig. 7. Transconductance Fig.. Gate Charge 32 2 = - ºC V CE = 5V = 22A 2 25ºC I G = ma g f s - Siemens 5ºC VGE - Volts 6 2 3 5 6 7 - Amperes 3 5 6 7 9 Q G - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Capacitance 7, 6 T JJ = 25ºC 5ºC f = MHz IF - Amperes 5 3 V GE = V Capacitance - PicoFarads, C ies C oes V GE = 5V C res.5.5 2 2.5 3 3.5.5 5 5.5 V F - Volts 5 5 25 3 35 Fig.. Reverse-Bias Safe Operating Area Fig.. Maximum Transient Thermal Impedance D =.5 6 Z(th)JC - ºC / W. D =.2 D =. D =.5 D = t p / T t p = 5ºC R G = 5Ω dv / dt < V / ns 3 6 9 5 2 27 3 D =.2 D =. Single Pulse....... Pulse Width - Seconds T IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
Fig. 3. Forward-Bias Safe Operating Area @ = 25ºC Fig.. Forward-Bias Safe Operating Area @ = 75ºC V CE(sat) Limit V CE(sat) Limit 25µs µs 25µs µs.. = 5ºC = 25ºC Single Pulse,, DC ms ms ms.. = 5ºC = 75ºC Single Pulse ms ms,, DC ms IXYS CORPORATION, All Rights Reserved IXYS REF: (5P) 3---A
Package Outline IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.