High Voltage BIMOSFET TM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible G C E = 9 A S = 16 V (sat) = 4.9 V typ. t fi = 7 ns TO-247 AD G C E G = Gate, C = Collector, E = Emitter, TAB = Collector C (TAB) Symbol Conditions Maximum Ratings S = C to C 16 V V CGR = C to C; R GE = 1 MΩ 16 V S Continuous ± V M Transient ± V T C = C 9 A 9 T C = 9 C A M T C = C, 1 ms A SSOA = V, T VJ = 1 C, R G = 27 Ω =.8 S M = 12 A (RBSOA) Clamped inductive load, L = µh P C T C = C W -... + C M C T stg -... + C T L 1.6 mm (.63 in) from case for s C M d Mounting torque 1. Nm Weight 6 g Symbol Conditions Characteristic Values min. typ. max. BS =. ma, = V 16 V (th) =. ma, = 3.. V ES =.8 S = C µa = V = 1 C.1 ma I GES = V, = ± V ± na (sat) = 9, = V 4.9 7 V = 1 C.6 V Features High Voltage BIMOSFET TM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective R DS(on) MOS Gate turn-on - drive simplicity - MOSFET compatible for V turn on gate voltage Monolithic construction - high blocking voltage capability - very fast turn-off characteristics International standard package JEDEC TO-247 AD Reverse conducting capability Applications Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies CRT deflection Lamp ballasts Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 6 IXYS All rights reserved 1-4
Symbol Conditions Characteristic Values min. typ. max. C ies pf C oes = V, = V, f = 1 MHz 36 pf C res pf Q g = A, = 6 V, = V 34 nc t d(on) Inductive load, = 1 C 14 ns t ri ns t = 9, = V, L = µh, d(off) 1 ns t = 96 V, R G = 27 Ω fi 7 ns R thjc 1. K/W R thck. K/W Reverse Conduction Characteristic Values Symbol Conditions min. typ. max. V F I F = 9, = V 3.6 TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81.32.78.8 B.8 21.46.819.84 C.7 16.26.6.64 D 3. 3.6.14.144 E 4.32.49.17.216 F.4 6.2.212.244 G 1.6 2.13.6.84 H - 4. -.177 J 1. 1.4.4. K.8 11..426.433 L 4.7.3.18.9 M.4.8.16.31 N 1. 2.49.87.2 6 IXYS All rights reserved 2-4
= C = 17V V = 1 C 13V 11V 9V = 17V V 13V 11V 9V 7V 7V 2 4 6 8 12 14 16 18 2 4 6 8 12 14 16 18 Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics = V = C = 1 C I F = C = 1 C 4 6 8 12 14 2 4 6 8 V F Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 16 14 = 6V = A 12 8 6 4 2 M T = 1 C J K < S IXBH 9N14G 4 4 8 16 Q G - nanocoulombs Fig. Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area RBSOA 6 IXYS All rights reserved 3-4
t fi - nanoseconds 14 1 8 6 = 96V = V R G = 27Ω = 1 C t d(off ) - nanoseconds = 96V = V = A = 1 C 4 2 4 6 8 12 14 16 Fig. 7 Typ. Fall Time 4 6 R g - Ohms Fig. 8 Typ. Turn Off Delay Time Z thjc - K/W 1.1.1 Single Pulse.1.1.1.1.1.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance IXBH 9-14/16G 6 IXYS All rights reserved 4-4
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