MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN Switching Transistor Ordering Information Part Number Marking Package Packing Method MMBT69A S SOT- L Tape and Reel Absolute Maximum Ratings (),() Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 5 unless otherwise noted. Symbol Parameter Value Unit V EO ollector-emitter Voltage 5 V V BO ollector-base Voltage 4 V V EBO Emitter-Base Voltage 4.5 V I ollector urrent - ontinuous ma T J, T STG Operating and Storage Junction Temperature Range 5 to +5 Notes:. These ratings are based on a maximum junction temperature of 5.. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. 997 Semiconductor omponents Industries, LL. October-7, Rev. Publication Order Number: MMBT69A/D
Thermal haracteristics () Values are at T A = 5 unless otherwise noted. Symbol Parameter Value Unit Total Device Dissipation 5 mw P D Derate Above 5.8 mw/ R qja Thermal Resistance, Junction-to-Ambient 556 /W Note:. Device is mounted on FR PB.6 inch X.6 inch X.6 inch. Electrical haracteristics Values are at T A = 5 unless otherwise noted. Symbol Parameter onditions Min. Max. Unit BV EO ollector-emitter Breakdown Voltage (4) I = ma, I B = 5 V BV ES ollector-emitter Breakdown Voltage I = μa, V BE = 4 V BV BO ollector-base Breakdown Voltage I = μa, I E = 4 V BV EBO Emitter-Base Breakdown Voltage I E = μa, I = 4.5 V I BO ollector ut-off urrent V B = V, I E =.4 V B = V, I E =, T A = 5 μa h FE D urrent Gain (4) I = ma, V E =.5 V, T A = 5 I = ma, V E =. V 4 I = ma, V E =. V I = ma, I B =. ma. V E (sat) ollector-emitter Saturation I = ma, I B =. ma, T A = 5. Voltage (4) I = ma, I B =. ma.5 V I = ma, I B = ma.5 I = ma, I B =. ma.7.85 I = ma, I B =. ma, T A = 5. V BE (sat) Base-Emitter Saturation Voltage I = ma, I B =. ma, T A = 5.59 V I = ma, I B =. ma.5 I = ma, I B = ma.6 obo Output apacitance V B = 5. V, I E =, f =. MHz 4. pf ibo Input apacitance V EB =.5 V, I =, f =. MHz 5. pf h fe Small-Signal urrent Gain I = ma, V E = V R G =. kω, f = MHz 5. t s Storage Time I B = I B = I = ma ns t on Turn-On Time V =. V, I = ma, I B =. ma ns t off Turn-Off Time V =. V, I = ma, I B =. ma, I B =.5 ma 8 ns MMBT69A NPN Switching Transistor Note: 4. Pulse test: Pulse width μs, duty cycle %
Typical Performance haracteristics h - D URRENT GAIN FE 5 5 V =.V E.. 5 5-4 Figure. D urrent Gain vs. ollector urrent V - OLLETOR-EMITTER VOLTAGE (V) ESAT.5.4... β = 5-4. 5 5 Figure. ollector-emitter Saturation Voltage vs. ollector urrent MMBT69A NPN Switching Transistor V - BASE-EMITTER VOLTAGE (V) BESAT.4..8.6.4-4 β = 5 5. Figure. Base-Emitter Saturation Voltage vs. ollector urrent V - BASE-EMITTER ON VOLTAGE (V) BE(O N).8.6.4-4.. 5 5 V =.V E Figure 4. Base-Emitter On Voltage vs. ollector urrent I - OLLETOR URRENT (na) BO 6 V B= V 5 5 75 5 5 T A - AMBIENT TEMPERATURE ( ) Figure 5. ollector ut-off urrent vs. Ambient Temperature APAITANE (pf) 5 4 ibo obo..5 5 5 REVERSE BIAS VOLTAGE (V) Figure 6. Output apacitance vs. Reverse Bias Voltage F =.MHz
Typical Performance haracteristics (ontinued) SWITHING TIMES (ns) 5 5 V =. V I = I B = I B = 5 5 t s d Figure 7. Switching Times vs. ollector urrent t sr t sf t s SWITHING TIMES (ns) 8 6 4 t s f t s t s d t s r I = ma, I B =. ma, I B =.5 ma, V =. V 5 5 75 T - AMBIENT TEMPERATURE ( ) A Figure 8. Switching Times vs. Ambient Temperature MMBT69A NPN Switching Transistor I - TURN OFF BASE URRENT (ma) B - - -8 - I = ma V =. V t =. ns s 6. ns 4. ns 4 6 8 I - TURN ON BASE URRENT (ma) B I - TURN OFF BASE URRENT (ma) B - - - I = ma V =. V t S=. ns 4. ns 6. ns 6. ns 8. ns 5 5 5 I - TURN ON BASE URRENT (ma) B Figure 9. Storage Time vs. Turn-On and Turn-Off Base urrents Figure. Storage Time vs. Turn-On and Turn-Off Base urrents I - TURN OFF BASE URRENT (ma) B - - - I = ma V =. V t = 7. ns f 8. ns ns 4 6 8 I - TURN ON BASE URRENT (ma) B I - TURN OFF BASE URRENT (ma) B - - -8 - I = ma V =. V t f =. ns 4 6 8 I - TURN ON BASE URRENT (ma) B. ns 4. ns 5. ns Figure. Fall Time vs. Turn-On and Turn-Off Base urrents Figure. Fall Time vs. Turn-On and Turn-Off Base urrents 4
Typical Performance haracteristics (ontinued) I - TURN OFF BASE URRENT (ma) B - - - I = ma V =. V t =. ns f 5 5 5 I - TURN ON BASE URRENT (ma) B. ns 4. ns 8. ns. ns Figure. Fall Time vs. Turn-On and Turn-Off Base urrents V - BASE-EMITTER OFF VOLTAGE (V) BE(O) - - - I = ma V =. V t d = 8. ns 5 5 I - TURN ON BASE URRENT (ma) B 5. ns 4. ns. ns Figure 4. Delay Time vs. Base-Emitter Off Voltage and Turn-On Base urrent MMBT69A NPN Switching Transistor I - TURN ON BASE URRENT (ma) B 5 V =. V t =. ns r 5. ns ns 5 ns Figure 5. Rise Time vs. Turn-On Base urrent and ollector urrent P - POWER DISSIPATION (mw) D 5 4 TO-9 SOT- 5 5 75 5 5 TEMPERATURE ( ) Figure 6. Power Dissipation vs. Ambient Temperature 5
Physical Dimensions (.9).9±..95.9. +. -.5.6.7. A B.4.95.9.. MMBT69A NPN Switching Transistor LAND PATTERN REOMMENDATION. MAX SEE DETAIL A (.9)....4±. GAGE PLANE..8. MIN (.55).5 SEATING PLANE NOTES: UNLESS OTHERWISE SPEIFIED A) REFERENE JEDE REGISTRATION TO, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. ) DIMENSIONS ARE INLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANING PER ASME Y4.5M - 994. E) DRAWING FILE NAME: MADREV SALE: X Figure 7. -LEAD, SOT, JEDE TO, LOW PROFILE 6
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