Preferred Device SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF88 have an applications specific stateoftheart die designed for use in V lineoperated SWITCHMODE Power supplies and electronic light ballasts. Features Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h FE Fast Switching No Coil Required in Base Circuit for TurnOff (No Current Tail) Tight Parametric Distributions are Consistent LottoLot Two Package Choices: Standard TO or Isolated TO MJF88, Case D, is UL Recognized at 5 V RMS : File #E6969 PbFree Packages are Available* POWER TRANSISTOR 8. AMPERES VOLTS 45 and 5 WATTS MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit MJE88G AYWW CollectorEmitter Sustaining Voltage V CEO 45 Vdc TOAB CollectorBase Breakdown Voltage V CES Vdc CASE A9 STYLE EmitterBase Voltage V EBO 9. Vdc Collector Current Continuous I C 8. Adc Peak (Note ) I CM 6 Base Current Continuous Peak (Note ) RMS Isolation Voltage (Note ) Test No. Per Figure a Test No. Per Figure b Test No. Per Figure c (for sec, R.H. < %, T A = 5 C) Total Device Dissipation @ T C = 5 C MJE88 MJF88 Derate above 5 C MJE88 MJF88 I B 4. I BM 8. V ISOL MJF88 45 5 5 P D 5 45..6 Adc V W W/ C Operating and Storage Temperature T J, T stg 65 to 5 C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase MJE88 MJF88 R JC..78 C/W Thermal Resistance, JunctiontoAmbient R JA 6.5 C/W Maximum Lead Temperature for Soldering Purposes /8 from Case for 5 Seconds T L 6 C TO FULLPACK CASE D STYLE UL RECOGNIZED Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and *For additional information on our PbFree strategy reliability may be affected. and soldering details, please download the. Pulse Test: Pulse Width = 5 ms, Duty Cycle %. ON Semiconductor Soldering and Mounting. Proper strike and creepage distance must be provided. Techniques Reference Manual, SOLDERRM/D. om/on/ Semiconductor Components Industries, LLC, 6 Publication Order Number: April, 6 Rev. 6 MJE88/D G A Y WW = PbFree Package = Assembly Location = Year = Work Week MJF88G AYWW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.
ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise specified) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = ma, L = 5 mh) V CEO(sus) 45 Vdc Collector Cutoff Current (V CE = Rated V CEO, I B = ) I CEO Adc Collector Cutoff Current (V CE = Rated V CES, V EB = ) I (T C = 5 C) CES Adc 5 Collector Cutoff Current (V CE = 8 V, V EB = ) (T C = 5 C) Emitter Cutoff Current (V EB = 9. Vdc, I C = ) I EBO Adc ON CHARACTERISTICS BaseEmitter Saturation Voltage (I C =. Adc, I B =. Adc) V BaseEmitter Saturation Voltage (I C = 4.5 Adc, I B =.9 Adc) BE(sat).8..9.5 Vdc CollectorEmitter Saturation Voltage V CE(sat) Vdc (I C =. Adc, I B =. Adc)..6 (T C = 5 C)..65 (I C = 4.5 Adc, I B =.9 Adc).5.7.4.8 (T C = 5 C) DC Current Gain (I C =. Adc, V CE = 5. Vdc) h FE 4 4 (T C = 5 C) 8 DC Current Gain (I C = 4.5 Adc, V CE =. Vdc) 6. 9. (T C = 5 C) 5. 8. DC Current Gain (I C =. Adc, V CE =. Vdc) 5 (T C = 5 C) 6 DC Current Gain (I C = madc, V CE = 5. Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I C =.5 Adc, V CE = Vdc, f =. MHz) f T ÎÎ MHz Output Capacitance (V CB = Vdc, I E =, f =. MHz) C ob ÎÎ 5 pf Input Capacitance (V EB = 8. V) C ib 75 5 pf Î Dynamic Saturation Voltage: Î V (I C =. Adc. s CE(dsat) 5.5 Vdc (T C = 5 C).5 Î Determined. s and Î I B = madc. s respectively after V Î Î CC = V). s (T C = 5 C).5 rising I 6.5 B reaches 9% of Î final I B Î (see Figure 8) (I C = 5. Adc. sî.5 (T C = 5 C) 4.5 Î Î Î I B =. Adc V Î CC = V). s (T C = 5 C).4 9. SWITCHING CHARACTERISTICS: Resistive Load (D.C. %, Pulse Width = s) TurnOn Time (I C =. Adc, I B =. Adc, t I =. Adc, V = V) Î (T C = 5 C) on 9 ns B CC TurnOff Time t off..5 s (T C = 5 C).5 TurnOn Time (I C = 4.5 Adc, I B =.9 Adc, t I =.5 Adc, V = V) Î (T C = 5 C) on 8 5 ns B CC TurnOff Time Î t off.6.5 s (T C = 5 C). SWITCHING CHARACTERISTICS: Inductive Load (V clamp = V, V CC = 5 V, L = H) Fall Time (I C =. Adc, I B =. Adc, t fi 8 I =. Adc) Î (T C = 5 C) ns B Storage Time t (T C = 5 C) si.5.75.9 s Crossover Time t c 5 5 ns (T C = 5 C) Fall Time (I C = 4.5 Adc, I B =.9 Adc, t I =.5 Adc) Î (T C = 5 C) fi 85 5 5 ns B Storage Time t si.. s (T C = 5 C).6 Crossover Time Î t Î (T C = 5 C) c 5 ns. Pulse Test: Pulse Width = 5. ms, Duty Cycle %. 4. Proper strike and creepage distance must be provided. om/on/
TYPICAL STATIC CHARACTERISTICS T J = 5 C V CE = V T J = 5 C V CE = 5 V h FE, DC CURRENT GAIN T J = 5 C T J = C h FE, DC CURRENT GAIN T J = 5 C T J = C.. Figure. DC Current Gain @ Volt.. Figure. DC Current Gain @ 5 Volts T J = 5 C V CE, VOLTAGE (VOLTS).5.5. I C = A A 5 A 8 A A I B, BASE CURRENT (AMPS) V CE, VOLTAGE (VOLTS) I C /I B =. T J = 5 C T J = 5 C.... I C COLLECTOR CURRENT (AMPS) Figure. Collector Saturation Region Figure 4. CollectorEmitter Saturation Voltage V BE, VOLTAGE (VOLTS)....9.8.7 T J = 5 C.6.5 T J = 5 C.4.. I C /I B = C, CAPACITANCE (pf) C ib C ob V CE, COLLECTOREMITTER VOLTAGE (VOLTS) T J = 5 C f = MHz Figure 5. BaseEmitter Saturation Region Figure 6. Capacitance om/on/
TYPICAL SWITCHING CHARACTERISTICS (I B = I C / for all switching) 5 I B(off) = I C / V CC = V PW = s 45 4 5 T J = 5 C T J = 5 C I B(off) = I C / V CC = V PW = s t, TIME (ns) I C /I B = T J = 5 C T J = 5 C t, TIME (ns) 5 I C /I B = 5 5 5 4 5 6 7 8 4 5 6 7 8 Figure 7. Resistive Switching, t on Figure 8. Resistive Switching, t off t, TIME (ns) 5 5 I C COLLECTOR CURRENT (AMPS) I B(off) = I C / V CC = 5 V V Z = V L C = H t si, STORAGE TIME (ns) 5 45 4 5 T J = 5 C T J = 5 C I C = A 5 5 5 5 T J = 5 C T J = 5 C I 5 C /I B = I C = 4.5 A 4 5 6 7 8 4 5 6 7 8 9 4 5 h FE, FORCED GAIN I B(off) = I C / V CC = 5 V V Z = V L C = H Figure 9. Inductive Storage Time, t si Figure. Inductive Storage Time, t si (h FE ) 4 5 t c 5 T J = 5 C T J = 5 C I B(off) = I C / V CC = 5 V V Z = V L C = H t, TIME (ns) 5 5 t fi t, TIME (ns) 5 t c t fi I B(off) = I C / V CC = 5 V 5 V Z = V L C = H T J = 5 C T J = 5 C 4 5 6 7 8 5 4 5 6 7 8 Figure. Inductive Switching, t c and t fi Figure. Inductive Switching, t c and t fi I C /I B = om/on/ 4
t fi, FALL TIME (ns) 6 5 4 8 7 6 4 5 6 7 8 9 4 5 h FE, FORCED GAIN Figure. Inductive Fall Time TYPICAL SWITCHING CHARACTERISTICS (I B = I C / for all switching) 4 I B(off) = I C / I C = A V CC = 5 V V Z = V 5 L C = H 5 9 I C = 4.5 A 5 T J = 5 C T J = 5 C T C, CROSSOVER TIME (ns) 5 I C = 4.5 A T J = 5 C T J = 5 C I C = A 4 5 6 7 8 9 4 5 h FE, FORCED GAIN I B(off) = I C / V CC = 5 V V Z = V L C = H Figure 4. Inductive Crossover Time POWER DERATING FACTOR om/on/ 5 EXTENDED 6 SOA 5 4 DC (MJF88). 5 V V BE(off) = V., 5 V 4 6 8 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) V CE, COLLECTOREMITTER VOLTAGE (VOLTS),,8,6,4,, DC (MJE88) 5 ms GUARANTEED SAFE OPERATING AREA INFORMATION ms s s Figure 5. Forward Bias Safe Operating Area THERMAL DERATING 4 6 8 4 6 T C, CASE TEMPERATURE ( C) SECOND BREAKDOWN DERATING Figure 7. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE 9 8 7 T C 5 C I C /I B 4 L C = 5 H Figure 6. Reverse Bias Switching Safe Operating Area limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T C = 5 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when T C > 5 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 5 may be found at any case temperature by using the appropriate curve on Figure 7. T J(pk) may be calculated from the data in Figure and. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turnoff with the basetoemitter junction reversebiased. The safe level is specified as a reversebiased safe operating area (Figure 6). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
VOLTS 5 4 V CE dyn s dyn s 9% I B s 4 s I B 5 4 TIME 5 6 7 8 Figure 8. Dynamic Saturation Voltage Measurements 9 8 7 6 5 4 I C V CLAMP % V CLAMP t si I B 9% I B 4 5 6 7 8 TIME % I C Figure 9. Inductive Switching Measurements t c 9% I C t fi +5 V F 5 W W MTP8P F V CE PEAK I C PEAK + V COMMON V off MPF9 5 MPF9 5 F 5 W MUR5 MJE MTP8P MTPN R B I out A R B F V CE I B I B V(BR)CEO(sus) L = mh RB = V CC = VOLTS I C (pk) = ma I B INDUCTIVE SWITCHING L = H RB = V CC = 5 VOLTS RB SELECTED FOR DESIRED I B RBSOA L = 5 H RB = V CC = 5 VOLTS RB SELECTED FOR DESIRED I B Table. Inductive Load Switching Drive Circuit om/on/ 6
TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED). D =.5...5. SINGLE PULSE... t, TIME (ms) P (pk) t t DUTY CYCLE, D = t /t Figure. Typical Thermal Response (Z JC (t)) for MJE88 R JC (t) = r(t) R JC R JC =. C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R JC (t) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D =.5. P (pk) R JC (t) = r(t) R JC.. R JC =.78 C/W MAX D CURVES APPLY FOR POWER.5 PULSE TRAIN SHOWN t READ TIME AT t t T J(pk) T C = P (pk) R JC (t) DUTY CYCLE, D = t /t.. SINGLE PULSE.. t, TIME (ms) Figure. Typical Thermal Response (Z JC (t)) for MJF88 ORDERING INFORMATION Device Package Shipping MJE88 TOAB 5 Units / Rail MJE88G TOAB (PbFree) 5 Units / Rail MJF88 TO (Fullpack) 5 Units / Rail MJF88G TO (Fullpack) (PbFree) 5 Units / Rail om/on/ 7
TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS.99 MIN MOUNTED FULLY ISOLATED PACKAGE LEADS.99 MIN HEATSINK HEATSINK HEATSINK. MIN Figure a. Screw or Clip Mounting Position for Isolation Test Number Figure b. Clip Mounting Position for Isolation Test Number Figure c. Screw Mounting Position for Isolation Test Number *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 44 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER NUT Figure a. ScrewMounted HEATSINK Figure b. ClipMounted Figure. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in. lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 44 screw, without washers, and applying a torque in excess of in. lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 44 screws indicate that the screw slot fails between 5 to in. lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding in. lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN4. om/on/ 8
PACKAGE DIMENSIONS TOAB CASE A9 ISSUE AA H Q Z L V G 4 B N D A K F T U R J S C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.6 4.48 5.75 B.8.45 9.66.8 C.6.9 4.7 4.8 D.5.5.64.88 F.4.47.6.7 G.95.5.4.66 H..55.8.9 J.8.5.46.64 K.5.56.7 4.7 L.45.6.5.5 N.9. 4.8 5. Q...54.4 R.8..4.79 S.45.55.5.9 T.5.55 5.97 6.47 U..5..7 V.45.5 Z.8.4 STYLE : PIN. BASE. COLLECTOR. EMITTER 4. COLLECTOR TO FULLPAK CASE D ISSUE G A K F Q H B D G N L PL Y U.5 (.) M B M Y C T S J R SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. D THRU D OBSOLETE, NEW STANDARD D. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.65.65 5.88 6. B.48.48.7.6 C.8.9 4.57 4.8 D.6..65.78 F.6.9.95. G. BSC.54 BSC H.5.5.8.4 J.8.5.45.6 K.5.54.47.7 L.48.5..6 N. BSC 5.8 BSC Q.4.8.5.5 R.99..5.6 S...57.87 U.8.58 6.6 6.56 STYLE : PIN. BASE. COLLECTOR. EMITTER om/on/ 9
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 858 USA Phone: 488977 or 84486 Toll Free USA/Canada Fax: 4889779 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 857785 om/on/ ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJE88/D