X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6 V S Continuous V M Transient V I D25 = 25 C A I DM = 25 C, Pulse Width Limited by M 1 A I A = 25 C A E AS = 25 C 3 J dv/dt I S I DM, V DD V DSS, 1 C 15 V/ns P D = 25 C 89 W -55... +1 C M 1 C T stg -55... +1 C T L Maximum Lead Temperature for Soldering C T SOLD 1.6 mm (.62in.) from Case for s 2 C M d Mounting Torque 1.13 / Nm/lb.in Weight 6 g Features G D S International Standard Package Low R DS(ON) and Q G Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings D (Tab) G = Gate D = Drain S = Source Tab = Drain Applications Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 1mA 6 V (th) V DS =, I D = 2μA 2.7 5. V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls I GSS = V, V DS = V na I DSS V DS = V DSS, = V 25 A = 125 C μa R DS(on) = V, I D =.5 I D25, Note 1 38 m 18 IXYS CORPORATION, All Rights Reserved DS674B(4/18)
Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max g fs V DS = V, I D =.5 I D25, Note 1 36 72 S R Gi Gate Input Resistance.7 C iss 7 pf C oss = V, V DS = 25V, f = 1MHz pf C rss pf Effective Output Capacitance C o(er) Energy related V 267 pf GS = V C o(tr) Time related V 11 pf DS =.8 V DSS t d(on) 36 ns Resistive Switching Times t r 11 ns = V, V DS =.5 V DSS, I D =.5 I D25 t d(off) 72 ns R G = 2 (External) t f 7 ns Q g(on) 137 nc Q gs = V, V DS =.5 V DSS, I D =.5 I D25 37 nc Q gd 46 nc R thjc.14 C/W R thcs.21 C/W TO-247 (IXTH) Outline D A A2 A1 c D L R L1 b b2 b4 e E + 1 2 3 O + J M C A M Q C B S D2 P1 ixys option A P O + K M D B M + 4 E1 D1 PINS: 1 - Gate 2, 4 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max I S = V A I SM Repetitive, pulse Width Limited by M 3 A V SD I F = I S, = V, Note 1 1.4 V t rr I 465 ns F = A, -di/dt = A/μs Q RM μc V I R = V RM 43 A Note 1. Pulse test, t s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65B1 6,683,344 6,727,585 7,5,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,123B1 6,534,343 6,7,5B2 6,759,692 7,63,975B2 4,881,6 5,34,796 5,187,117 5,486,715 6,6,728B1 6,583,5 6,7,463 6,771,478B2 7,71,537
Fig. 1. Output Characteristics @ = 25 o C Fig. 2. Extended Output Characteristics @ = 25 o C 7 = V 8V 2 = V 9V 7V 8V 6V 1 7V 5V.5 1 1.5 2 2.5 3 6V 5V 5 15 25 7 Fig. 3. Output Characteristics @ = 125 o C = V 7V 3.4 3. Fig. 4. R DS(on) Normalized to I D = A Value vs. Junction Temperature = V 6V 5V RDS(on) - Normalized 2.6 2.2 1.8 1.4 1. I D = A I D = A 1 2 3 4 5 6 7 8 4V.6.2 - -25 25 75 125 1 - Degrees Centigrade 4.5 Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current 1.3 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4. = V 1.2 RDS(on) - Normalized 3.5 3. 2.5 2. 1.5 = 125 o C = 25 o C BVDSS / VGS(th) - Normalized 1.1 1..9.8.7 BV DSS (th) 1..6.5 1 1 1 1 2 I D - Amperes.5 - - - 1 1 1 - Degrees Centigrade 18 IXYS CORPORATION, All Rights Reserved
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 9 1 1 7 = 125 o C 25 o C - o C - -25 25 75 125 1 - Degrees Centigrade 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts Fig. 9. Transconductance Fig.. Forward Voltage Drop of Intrinsic Diode 1 1 = - o C 1 1 25 o C 1 g f s - Siemens 125 o C IS - Amperes 1 = 125 o C = 25 o C 1 1 I D - Amperes.3.4.5.6.7.8.9 1. 1.1 1.2 V SD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance, V DS = 325V VGS - Volts 8 6 4 I D = A I G = ma Capacitance - PicoFarads, 1, Ciss Coss 2 f = 1 MHz Crss 1 1 Q G - NanoCoulombs 1 1 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
55 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area EOSS - MicroJoules 45 35 25 15 5 Fig. 15. Maximum Transient.1 Thermal Impedance 1 1, 1.3 Fig. 15. Maximum Transient Thermal Impedance aaaaa.1 Z(th)JC - K / W R DS(on) Limit = 1 o C = 25 o C Single Pulse 25μs μs 1ms.1.1.1.1.1.1.1 1 Pulse Width - Seconds 18 IXYS CORPORATION, All Rights Reserved IXYS REF: T_N65X2 (Z8-S2) -9-15
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