GenX TM V IGBTs Medium-Speed-Low-Vsat PT IGBTs for -khz Switching S = V = A (sat).v t fi(typ) = ns TO- (IXGK) Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous ± V V GEM Transient ± V = C (Chip Capability) A = C A I LRMS Terminal Current Limit A M = C, ms A SSOA V GE = V, T VJ = C, R G = Ω M = A (RBSOA) Clamped Inductive Load S P C = C W -... + C M C T stg -... + C T L Maximum Lead Temperature for Soldering C T SOLD. mm (. in.) from Case for C M d Mounting Torque (IXGK)./ Nm/lb.in. F C Mounting Force (IXGX)../... N/lb. Weight TO- g PLUS g G C E PLUS TM (IXGX) Features Optimized for Low Conduction and Switching Losses Square RBSOA High Current Handling Capability International Standard Packages Advantages G C E Tab Tab G = Gate E = Emitter C = Collector Tab = Collector High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. BS = μa, V GE = V V V GE(th) = μa, = V GE.. V ES = S, V = V μa GE = C ma I GES = V, V GE = ±V ± na (sat) = A, V GE = V, Note.. V Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts IXYS CORPORATION, All Rights Reserved DS9999A(9/)
Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. g fs = A, = V, Note S TO- AA ( IXGK) Outline C ies. nf C oes = V, V GE = V, f = MHz 9 pf C res pf Q g nc Q ge = A, V GE = V, =. S nc Q gc nc t d(on) ns Inductive load, = C t ri ns E on = A, V GE = V.9 mj t d(off) = V, R G = Ω ns t fi Note ns E off. mj t d(on) ns Inductive load, T t J = C ri ns E on = A, V GE = V. mj t d(off) 9 ns = V, R G = Ω t fi ns Note E off. mj R thjc. C/W R thcs. C/W Back Side Terminals: = Gate, = Collector = Emitter Dim. Millimeter Inches Min. Max. Min. Max. A...9. A..9.. A...9. b.... b.9.9.9. b.9.9.. c.... D.9... E 9. 9.9.. e. BSC. BSC J.... K.... L.... L.9.9.9. P.... Q...9. Q..9.. R.... R..9..9 S.... T.... PLUS TM (IXGX) Outline Notes:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher (Clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Terminals: - Gate - Collector - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A...9. A.9..9. A.9... b.... b.9... b.9... C.... D...9. E.... e. BSC. BSC L 9.... L.... Q.9... R....9 IXYS MOSFETs and IGBTs are covered,,9,9,,9,9,,,,,, B,,,,,, B,,B by one or moreof the following U.S. patents:,,,,,,,,,9, B,,,, B,9,9,,9 B,,,,9,,,,,, B,,,,,, B,,
Fig.. Output Characteristics @ = ºC Fig.. Extended Output Characteristics @ = ºC V 9V V 9V V V V......... - Volts V 9 - Volts Fig.. Output Characteristics @ = ºC V 9V.. Fig.. Dependence of (sat) on Junction Temperature = A V VCE(sat) - Normalized....9 = A V. = A.......... - Volts. - - - Degrees Centigrade. Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance. = ºC VCE - Volts... = A A A = ºC ºC - ºC.. 9 V GE - Volts........ V GE - Volts IXYS CORPORATION, All Rights Reserved
Fig.. Transconductance Fig.. Gate Charge g f s - Siemens = - ºC ºC ºC VGE - Volts = V = A I G = ma 9 - Amperes Q G - NanoCoulombs, Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area f = MHz C ies Capacitance - PicoFarads,, C oes C res = ºC R G = Ω dv / dt < V / ns - Volts - Volts Fig.. Maximum Transient Thermal Impedance Z(th)JC - ºC / W........ Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig.. Inductive Switching Energy Loss vs. Gate Resistance Fig.. Inductive Switching Energy Loss vs. Collector Current. E off E on - - - - = ºC, E off E on - - - - R G = Ω,. Eoff - MilliJoules = V = A E on - MilliJoules Eoff - MilliJoules = V = ºC.... E on - MilliJoules. = A = ºC. 9 R G - Ohms. 9 9 - Amperes Fig.. Inductive Switching Energy Loss vs. Junction Temperature Fig.. Inductive Turn-off Switching Times vs. Gate Resistance. Eoff - MilliJoules E off E on - - - - R G = Ω, = V = A = A...... E on - MilliJoules t f i - Nanoseconds 9 t f i t d(off) - - - - = ºC, = V = A = A 9 t d(off) - Nanoseconds.. 9 - Degrees Centigrade 9 R G - Ohms Fig.. Inductive Turn-off Switching Times vs. Collector Current Fig.. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds t f i t d(off) - - - - R G = Ω, = V = ºC t d(off) - Nanoseconds t f i - Nanoseconds t f i t d(off) - - - - R G = Ω, = V = A, A t d(off) - Nanoseconds = ºC = A 9 9 - Amperes 9 - Degrees Centigrade IXYS CORPORATION, All Rights Reserved
Fig.. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 9. Inductive Turn-on Switching Times vs. Collector Current t r i - Nanoseconds t r i t d(on) - - - - = ºC, = V = A = A t d(on) - Nanoseconds t r i - Nanoseconds 9 t r i t d(on) - - - - R G = Ω, = V = ºC, ºC t d(on) - Nanoseconds 9 R G - Ohms 9 9 - Amperes Fig.. Inductive Turn-on Switching Times vs. Junction Temperature t r i - Nanoseconds t r i t d(on) - - - - R G = Ω, = V = A t d(on) - Nanoseconds = A 9 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_NB()9-9--A
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