Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S I D25 R DS(on) t rr = 9V = 56A 145m ns Symbol Test Conditions Maximum Ratings S = 25 C to 1 C 9 V V DGR = 25 C to 1 C, R GS = 1M 9 V S Continuous V M Transient V I D25 = 25 C 56 A I DM = 25 C, Pulse Width Limited by M 168 A I A = 25 C 28 A E AS = 25 C 2 J dv/dt I S I DM, V DD S, 1 C V/ns P D = 25 C W -55... +1 C M 1 C T stg -55... +1 C T L 1.6mm (.62 in.) from case for s C V ISOL / Hz, RMS t = 1min V~ I ISOL 1mA t = 1s V~ M d Mounting Torque 1.5/13 Nm/lb.in. Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight g ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BS = V = 3mA 9 V (th) = = 1mA 3.5 6.5 V I GSS = V, = V na I DSS = S, = V A = 125 C 5 ma minibloc E153432 G G = Gate S = Source S D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features International Standard Package minibloc, with Aluminium Nitride Isolation Low R DS(on) and Q G Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls S R DS(on) = V =.5 I D25, Note 1 145 m 14 IXYS CORPORATION, All Rights Reserved DS66B(1/14)
( = 25 C Unless Otherwise Specified) Min. Typ. Max. SOT-227B (IXFN) Outline g fs = V =.5 I D25, Note 1 27 44 S R Gi Gate Input Resistance.85 C iss 23 nf C oss = V, = 25V, f = 1MHz 1385 pf C rss 6 pf t d(on) Resistive Switching Times 74 ns t r = V, =.5 S =.5 I D25 ns t d(off) R G = 1 (External) 93 ns t f 38 ns Q g(on) 375 nc Q gs = V, =.5 S =.5 I D25 nc Q gd 145 nc R thjc.125 C/W R thcs.5 C/W (M4 screws (4x) supplied) Source-Drain Diode ( = 25 C Unless Otherwise Specified) Min. Typ. Max. I S = V 56 A I SM Repetitive, Pulse Width Limited by M 224 A V SD I F = I S, = V, Note 1 1.5 V t rr I ns F =.5 I D25, -di/dt = A/ s Q RM 1.8 C V R = V, = V I RM 15. A Note 1. Pulse test, t s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,123 B1 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,881,6 5,34,796 5,187,117 5,486,715 6,6,728 B1 6,583,5 6,7,463 6,771,478 B2 7,71,537
Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC = V 9V 1 = V 9V 1 2 3 4 5 6 7 8 - Volts 5 15 25 - Volts Fig. 3. Output Characteristics @ = 125ºC 3. Fig. 4. R DS(on) Normalized to I D = 28A Value vs. Junction Temperature = V 2.6 = V RDS(on) - Normalized 2.2 1.8 1.4 1. I D = 56A I D = 28A 5V 2 4 6 8 12 14 16 18 - Volts.6.2 - -25 25 75 125 1 - Degrees Centigrade 2.6 Fig. 5. R DS(on) Normalized to I D = 28A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 2.2 = V = 125ºC RDS(on) - Normalized 2. 1.8 1.6 1.4 1.2 1. = 25ºC.8 1 I D - Amperes - -25 25 75 125 1 - Degrees Centigrade 14 IXYS CORPORATION, All Rights Reserved
Fig. 7. Input Admittance Fig. 8. Transconductance 9 9 = - ºC 7 7 = 125ºC 25ºC - ºC g f s - Siemens 25ºC 125ºC 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 - Volts 7 9 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 1 IS - Amperes 1 1 1 = 125ºC VGS - Volts 9 8 7 6 5 4 3 = 4V I D = 28A I G = ma = 25ºC 2 1.3.4.5.6.7.8.9 1. 1.1 1.2 V SD - Volts 1 2 3 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance, 1 Capacitance - PicoFarads, 1, C iss C oss Z(th)JC - ºC / W.1.1 f = 1 MHz C rss 5 15 25 35 - Volts.1.1.1.1.1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_56N9P(99)-24-8
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