Polar TM Power MOSFET HiPerFET TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S I D25 R DS(on) t rr = 3V = 11A 24mΩ ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V DGR = 25 C to 15 C, R GS = 1MΩ 3 V minibloc, SOT-227 B E153432 G S S Continuous ± V M Transient ± 3 V I D25 = 25 C 11 A I LRMS External lead current limit A I DM = 25 C, pulse width limited by M 3 A I A = 25 C 7 A E AS = 25 C 5 J G = Gate S = Source D D = Drain Either Source terminal at minibloc can be used as Main or Kelvin Source S dv/dt I S I DM, V DD S, 15 C V/ns P D = 25 C 7 W -55... +15 C M 15 C T stg -55... +15 C T L 1.6mm (.62 in.) from case for 1s 3 C V ISOL 5/ Hz, RMS t = 1min 25 V~ I ISOL 1mA t = 1s 3 V~ M d Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.3/11.5 Nm/lb.in. Weight 3 g Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. BS = V = 3mA 3 V (th) = = 8mA 3. 5. V I GSS = ±V, = V ± na I DSS = S 25 μa = V = 125 C 1 ma Features Fast intrinsic diode Avalanche Rated Low R DS(ON) and Q G Low package inductance Advantages Easy to mount Space savings High power density Applications DC-DC coverters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC and DC motor control Uninterrupted power supplies High speed power switching applications R DS(on) = 1V = 7A, Note 1 24 mω 8 IXYS CORPORATION, All rights reserved DS99571F(5/8)
Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. SOT-227B Outline g fs = V = 7A, Note 1 5 9 S C iss 14.8 nf C oss = V, = 2, f = 1MHz 183 pf C rss 55 pf t d(on) Resistive Switching Times 3 ns t r 3 ns = 1V, =.5 S = 7A t d(off) ns R G = 1Ω (External) t f ns Q g(on) 185 nc Q gs = 1V, =.5 S = 7A 72 nc Q gd nc R thjc.18 C/W R thcs.5 C/W Source-Drain Diode Characteristic Values ( = 25 C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. I S = V A I SM Repetitive, pulse width limited by M 5 A V SD I F = 7A, = V, Note 1 1.3 V t rr I ns F = 25A, -di/dt = A/μs Q RM.6 μc V I R = V RM 6. A Note 1: Pulse test, t 3μs; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,5 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC = 1V 2 2 = 1V 1..5 1. 1.5 2. 2.5 3. 3.5 4. - Volts 2 4 6 8 1 12 14 16 18 - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. R DS(on) Normalized to I D = 7A Value vs. Junction Temperature = 1V 3.2 2.8 = 1V RDS(on) - Normalized 2.4 2. 1.6 1.2 I D = A I D = 7A.8 1 2 3 4 5 6 7 8 - Volts.4-5 -25 25 5 75 125 15 - Degrees Centigrade RDS(on) - Normalized 3. 2.8 2.6 2.4 2.2 2. 1.8 1.6 1.4 1.2 1. Fig. 5. R DS(on) Normalized to I D = 7A Value vs. Drain Current = 1V.8 1 2 2 I D - Amperes = 125ºC = 25ºC 11 9 7 5 3 1 Fig. 6. Maximum Drain Current vs. Case Temperature External Lead Current Limit -5-25 25 5 75 125 15 - Degrees Centigrade 8 IXYS CORPORATION, All rights reserved
Fig. 7. Input Admittance Fig. 8. Transconductance 1 1 = 125ºC 25ºC - ºC g f s - Siemens = - ºC 25ºC 125ºC 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts 1 1 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 1. Gate Charge 3 1 25 9 8 = 15V I D = 7A I G = 1mA IS - Amperes 15 = 125ºC VGS - Volts 7 6 5 4 3 5 = 25ºC 2 1.4.5.6.7.8.9 1. 1.1 1.2 1.3 1.4 V SD - Volts 1 1 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area, 1, C iss R DS(on) Limit Capacitance - PicoFarads 1, 1, C oss f = 1 MHz C rss 1 5 1 15 25 3 35 - Volts 1 = 15ºC DC = 25ºC Single Pulse 1 1 - Volts 25µs µs 1ms 1ms IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_N3P(93)5-13-8-A
Fig. 13. Maximum Transient Thermal Impedance 1. Z(th)JC - ºC / W..1.1.1.1.1.1.1 1 1 Pulse Width - Seconds 8 IXYS CORPORATION, All rights reserved IXYS REF: F_N3P(93)5-13-8-B