High Voltage Power MOSFET (Electrically Isolated Tab) S = 4500V I D25 = 0.9A 80 R DS(on) N-Channel Enhancement Mode ISOPLUS i4-pak TM Symbol Test Conditions Maximum Ratings S T J = 25 C to 50 C 4500 V V DGR T J = 25 C to 50 C, R GS = M 4500 V S Continuous 20 V M Transient 30 V I D25 T C = 25 C 0.9 A I DM T C = 25 C, Pulse Width Limited by T JM 3.0 A P D T C = 25 C 60 W T J - 55... +50 C T JM 50 C T stg - 55... +50 C T L Maximum Lead Temperature for Soldering 300 C T SOLD Plastic Body for 0s 260 C F C Mounting Force 20..20 / 4.5..27 N/lb. V ISOL 50/60Hz, Minute 4500 V~ Weight 6 g Symbol Test Conditions Characteristic Values (T J = 25 C, Unless Otherwise Specified) Min. Typ. Max. (th) =, I D = 250 A 3.5 6.0 V I GSS = 20V, = 0V 00 na I DSS = 3.6kV, = 0V 5 A = 4.5kV 25 μa = 3.6kV Note 2, T J = 00 C 5 μa 2 = Gate 5 = Drain 2 = Source Features 5 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages High Voltage Package Easy to Mount Space Savings High Power Density Applications Isolated Tab High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems R DS(on) = 0V, I D = 50mA, Note 80 203 IXYS CORPORATION, All Rights Reserved DS0050D(0/3)
Symbol Test Conditions Characteristic Values (T J = 25 C, Unless Otherwise Specified) Min. Typ. Max. ISOPLUS i4-pak TM (HV) Outline g fs = 50V, I D = 200mA, Note 0 0.70 S C iss 700 pf C oss = 0V, = 25V, f = MHz 80 pf C rss 29 pf R Gi Gate Input Resistance 2 t d(on) Resistive Switching Times 30 ns t r 43 ns = 0V, = 500V, I D = 0.5A t d(off) 73 ns R t G = 0 (External) f 20 ns Q g(on) 46 nc Q gs = 0V, = kv, I D = 0.5A 8 nc Q gd 23 nc R thjc 0.77 C/W R thcs 0.5 C/W Pin = Gate Pin 2 = Soure Pin 3 = Drain Pin 4 = Isolated Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25 C, Unless Otherwise Specified) Min. Typ. Max. I S = 0V A I SM Repetitive, Pulse Width Limited by T JM 5 A V SD I F = A, = 0V, Note 2.0 V t rr I F = A, -di/dt = 50A/μs, V R = 00V.75 μs Notes:. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I DSS measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,049,96 5,237,48 6,62,665 6,404,065 B 6,683,344 6,727,585 7,005,734 B2 7,57,338B2 by one or moreof the following U.S. patents: 4,860,072 5,07,508 5,063,307 5,38,025 6,259,23 B 6,534,343 6,70,405 B2 6,759,692 7,063,975 B2 4,88,06 5,034,796 5,87,7 5,486,75 6,306,728 B 6,583,505 6,70,463 6,77,478 B2 7,07,537
.2.0 Fig.. Output Characteristics @ T J = 25ºC = 0V 7V.0 0.9 0.7 Fig. 2. Output Characteristics @ T J = 25ºC = 0V 7V 6.5V 0.5 0.3 6V 0 20 40 60 80 00 20 40 - Volts 6V 0. 0 20 40 60 80 00 20 40 60 - Volts 5V 2.6 Fig. 3. R DS(on) Normalized to I D = 0.5A Value vs. Junction Temperature 2.4 Fig. 4. R DS(on) Normalized to I D = 0.5A Value vs. Drain Current 2.2 = 0V 2.2 = 0V RDS(on) - Normalized.8.4.0 I D = A I D = 0.5A RDS(on) - Normalized 2.0.8.6.4.2 T J = 25ºC T J = 25ºC.0-50 -25 0 25 50 75 00 25 50 T J - Degrees Centigrade 0.2 I D - Amperes.0 Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance.2.0 T J = 25ºC 25ºC - 40ºC -50-25 0 25 50 75 00 25 50 T C - Degrees Centigrade 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 - Volts 203 IXYS CORPORATION, All Rights Reserved
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 3.0 3.0 2.5 T J = - 40ºC 2.5 g f s - Siemens 2.0.5.0 25ºC 25ºC IS - Amperes 2.0.5.0 T J = 25ºC T J = 25ºC 0.5 0.5.0.2 I D - Amperes 0.3 0.5 0.7 0.9 V SD - Volts Fig. 9. Gate Charge Fig. 0. Capacitance 0 0,000 9 = 000V f = MHz VGS - Volts 8 7 6 5 4 3 I D = 0.5A I G = 0mA Capacitance - PicoFarads,000 00 C iss C oss 2 C rss 0 0 5 0 5 20 25 30 35 40 45 50 Q G - NanoCoulombs 0 0 5 0 5 20 25 30 35 40 - Volts Fig.. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 0. 00 0 0. 0 00 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 2. Forward-Bias Safe Operating Area Fig. 3. Forward-Bias Safe Operating Area 0 @ T C = 25ºC 0 @ T C = 75ºC R DS(on) Limit R DS(on) Limit 25µs 00µs 25µs 00µs ms ms 0. 0. 0ms 0ms T J = 50ºC T C = 25ºC Single Pulse DC 00ms T J = 50ºC T C = 75ºC Single Pulse DC 00ms 00,000 0,000 - Volts 00,000 0,000 - Volts 203 IXYS CORPORATION, All Rights Reserved IXYS REF: T_N450(H7-P640) 0--3
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