D M SQ PINS G L A F H K E J D VV QQ PP C 24 2 9 6 3 9 7 8 7 4 2 8 RR (4 PLACES) B N P Q R S Y EE XX V T LL DD GG TT SS X 2 3 4 GG T C FF LABEL T C 6 DD GG GG U P 2 N 3 NC 4 U V 6 W TERMINAL CODE 9 GND WN VN 2 UN 3 WP 4 VP UP 7 FO 8 V AMP 6 TH M 7 VD 8 NC 9 CBW- 2 CBW+ 2 CBV- 22 CBV+ 23 CBU- 24 CBU+ Description: Powerex s (ASIPMs) are inteligent power modules that integrate power devices, gate drive and protection circuitry in a compact package for use in small inverter applications up to 2kHz. Use of application specific HVICs allow the designer to reduce inverter size and overall design time. Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.6 +/-.2 3.+/-.4 B 3.9 +/-.2 8. +/-.4 C.3 9. D. 2. E 3. 79. F 3.74±. 9±.2 G.32 33. H.9 24. J.87 22. K.8 2. L.24 6. M.2 Sq.. Sq. N 3.3 77. P 2.44 62. Q.8±. 47.±.2 R.26 32. S.26 6. T.3 9. Dimensions Inches Millimeters U.4 Rad.. Rad. V.37 9. W.4. X.2 3. Y 2.3.4 DD.47 2. EE.8 Rad. 2. Rad. FF.6 4.2 GG.3 7.62 LL.8 2. MM.2 3. PP.49 2. QQ.8 2.4 RR.6 Dia. 4. Dia. SS.4. TT.6. VV.6 4. XX.67 Rad. 7 Rad. Features: 3-phase IGBT Inverter Bridge Integrated HVICs for Gate Drive, Protection and System Control Functions Built-in Thermistor Direct Connection to DSP/CPU Applications: Smart Motors General Purpose Inverters Small Motor Control Ordering Information: is a 2V, 2 Ampere Application Specific Power Module. 3
Absolute Maximum Ratings, T j = 2 C unless otherwise specified Characteristics Symbol Units Power Device Junction Temperature* T j -2 to 2 C Storage Temperature T stg -4 to 2 C Case Operating Temperature (See T C Measure Point Illustration) T C -2 to C Mounting Torque, M3. Mounting Screws.2 in-lb Module Weight (Typical) 37 Grams Isolation Voltage** V ISO 2 Volts *The indicated values are specified considering the safe operation of all the parts within the ASIPM. The maximum rating for the ASIPM power chips (IGBT & FWDi) is T j <. **6 Hz sinusoidal AC applied between all terminals and the base plate for minute. IGBT Inverter Sector Supply Voltage (Applied between P - N) V CC 9 Volts Supply Voltage, Surge (Applied between P - N, Surge-Value) V CC(surge) Volts Each IGBT Collector-Emitter Static Voltage (Applied between P-U. V. W, U. V. W-N) V P or V N 2 Volts Each IGBT Collector-Emitter Switching Voltage V P(S) or V N(S) 2 Volts (Applied between P-U. V. W, U. V. W-N (Pulse)) Each IGBT Collector Current, T C = 2 C, ( ) means I C Peak Value ±I C (±I CP ) ±2 (±) Amperes Control Sector Supply Voltage V D, V DB -. ~ 2 Volts Input Signal Voltage V CIN -. ~ 7. Volts Fault Output Supply Voltage V FO -. ~ 7. Volts Fault Output Current I FO ma DC-link IGBT Current Signal Amp Output Current I AMP ma 4
Electrical and Mechanical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector-Emitter Saturation Voltage V CE(sat) I C = 2A, T j = 2 C, V D = V DB = V, 3.6 Volts Input = ON (Shunt Voltage Drop Not Included) Diode Forward Voltage V EC T j = 2 C, -I C = 2A 3. Volts Switching Times t on /2 Bridge Inductive, Input = V V,.3.2 2. µs t C(on) V CC = 6V, I C = 2A, T j = 2 C,..4 µs t off V D = V, V DB = V 2.2 4. µs t C(off) Note: t on, t off include delay time of.9.6 µs FWDi Reverse Recovery Time t rr the internal control circuit..2 µs Short-circuit Endurance (Output, Arm, and @V CC 8V, Input = V V (One-shot), No Destruction Load Short-circuit Modes) -2 C T j(start) 2 C, F O Output by Protection Operation 3.V V D = V DB 6.V Switching SOA @V CC 8V, Input = V V, No Destruction T j C, I C < OC Trip Level, No Protecting Operation 3.V V D = V DB 6.V No F O Output T C Measure Point T C T C
Electrical and Mechanical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Circuit Current (Average) I D T j = 2 C, V D = V, V IN = V ma I DB T j = 2 C, V D = V DB = V, V IN = V ma Input ON Threshold Voltage V th(on).8.4 2. Volts Input OFF Threshold Voltage V th(off) 2. 3. 4. Volts Input Pull-up Resistor Ri Applied between kω Input Terminal-inside Power Supply PWM Input Frequency f PWM T C C, T j 2 C khz Arm Shoot-through Blocking Time* t DEAD Relates to Corresponding Inputs 4. µs T C = -2 C ~ C Input Interlock Sensing t int Relates to Corresponding Input ns Inverter DC-link IGBT Current V amp % I C = I OP(%), V D = V, T j = 2 C. 2. 2. Volts Sense Voltage Output Signal** V amp 2% I C = I OP(2%), V D = V, T j = 2 C 3. 4.. Volts Inverter DC-link IGBT Current V amp 2% I C = I OP(2%), V D = V. Volts Sense Voltage Output Limit** V amp % I C = I OP(%), V D = V mv Over-current Trip Level OC 39. 46. Amperes Over-current Delay Time t OC T j = 2 C µs Short-circuit Trip Level SC 69.7 Amperes Short-circuit Delay Time t SC 2 µs Trip Level UV D. 2. 2.7 Volts Supply Circuit Reset Level UV Dr. 2. 3.2 Volts Under-voltage Trip Level UV DB T C = T j = 2 C..8.6 Volts Protection Reset Level UV DBr.6.3 2. Volts Delay Time t dv µs Fault Output Pulse Width*** t FO T j = 2 C..8 ms Fault Output Current*** I Fo(H) Open Collector Output µa I Fo(L) ma Thermistor Resistance R TO T O = 2 C (298K) 9.. k Material Constant**** β T = 2 C, T 2 = C 34 K * The dead-time has to be set externally by the CPU; it is not part of the ASIPM internal functions. **Refer to the graph on next page. ***Fault output signalling is given only when the internal OC, SC, and UV protection circuits are activated. The OC, SC and UV protection (and fault output) operate for the lower arms only. The OC and SC protection fault output is given in a pulse format while that of UV protection is maintained throughout the duration of the under-voltage condition. **** T = β R T ln[ + R TO ] T O 6
Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case R th(j-c)q Each IGBT. C/Watt R th(j-c)d Each FWDi 2. C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module..4 C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Min. Typ. Value Units Supply Voltage V CC Applied across P2-N2 Terminals 6 8 Volts Control Supply Voltage V D Applied between V D -GND 3.. 6. Volts V DB Applied between CBU+ & CBU-, 3.. 6. Volts CBV+ & CBV-, CBW+ & CBW- Control Supply dv/dt dv D /dt, dv DB /dt - V/µs Input ON Voltage V CIN(on) Applied between.8 Volts Input OFF Voltage V CIN(off) U P, V P, W P, U N, V N, W N -GND 4.. Volts Module Case Operating Temperature T C C PWM Input Frequency f PWM T C C, T j 2 C khz Allowable Minimum Input On-pulse Width t XX µs Arm Shoot-through Blocking Time t DEAD Relate to Corresponding Inputs 4. µs CURRENTSENSE VOLTAGE OUTPUT SIGNAL,V AMP, (VOLTS) 4 3 2 INVERTER DC-LINK IGBT CURRENT ANALOG SIGNALING (TYPICAL) V D = V T j = 2 C % 2% 2 3 ACTUAL LOAD PEAK CURRENT, (%), (I C = I O X 2 ) 7
4 3 3 2 2 OUTPUT CHARACTERISTICS (TYPICAL) (INVERTER PART) T j = 2 o C 3 V D = 7V 2 3 4 6 COLLECTOR-EMITTER VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE VS. (INVERTER PART) 6 4 3 2 V D = V DB = V T j = 2 o C T j = 2 o C 2 3 4 SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE VS. SUPPLY VOLTAGE (TYPICAL) (INVERTER PART) 3. 3. 2. 2.... I C = A T j = 2 o C T j = 2 o C 3 4 6 7 8 SUPPLY VOLTAGE, V D, (VOLTS) SWITCHING TIMES, t c(on), t c(off), (µs) t c(off) t c(on) SWITCHING TIME VS. (INVERTER PART, N-SIDE) - V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C -2-2 SWITCHING TIMES, t on, t off, (µs) 2 SWITCHING TIME VS. (INVERTER PART, N-SIDE) V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C t off t on - - 2 SWITCHING LOSS, E SW(on), E SW(off), (mj/pulse) 2 E sw(off) E sw(on) SWITCHING LOSS CHARACTERISTICS (TYPICAL) (INVERTER PART, N-SIDE) V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C - - 2 SWITCHING TIMES, t c(on), t c(off), (µs) SWITCHING TIME VS. (INVERTER PART, P-SIDE) t c(off) t c(on) - V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C -2-2 SWITCHING TIMES, t on, t off, (µs) 2 SWITCHING TIME VS. (INVERTER PART, P-SIDE) V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C t off t on - - 2 SWITCHING LOSS, E SW(on), E SW(off), (mj/pulse) 2 E sw(on) E sw(off) SWITCHING LOSS CHARACTERISTICS (TYPICAL) (INVERTER PART, P-SIDE) T j = 2 o C T j = 2 o C - - 2 8
DIODE FORWARD CURRENT, -I C, (AMPERES) 2 DIODE FORWARD CHARACTERISTICS (FWDi PART) V D = V DB = V T j = 2 o C T j = 2 o C 2 3 4 6 DIODE FORWARD VOLTAGE, V EC, (VOLTS) REVERSE RECOVERY CURRENT, I rr, (AMPERES) 2 REVERSE RECOVERY CURRENT VS. (FWDi PART) V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C - 2 REVERSE RECOVERY TIME, t rr, (µs) - REVERSE RECOVERY TIME VS. (FWDi PART) V CC = 6V V D = V DB = V T j = 2 o C T j = 2 o C -2-2 INPUT VOLTAGE, V CIN(on), V CIN(off), (VOLTS) 6 4 3 2 INPUT VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) (CONTROL PART) V D = V DB = V V CIN(off) V CIN(on) - JUNCTION TEMPERATURE, T j, ( C) SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION, TRIP RESET LEVEL, UV Dr, UV D, (VOLTS) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) (CONTROL PART, N-SIDE). 2.. 7.. 2. V D = V DB = V UV Dr UV D - CASE TEMPERATURE, T C, ( C) SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION, TRIP RESET LEVEL, UV DBr, UV DB, (VOLTS) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) (CONTROL PART, P-SIDE) 2..... 9. 9. V D = V DB = V UV DBr UV DB - CASE TEMPERATURE, T C, ( C) OVER CURRENT, I OC, (AMPERES) 3 2 49 OVER CURRENT TRIP LEVEL VS. JUNCTION TEMPERATURE (TYPICAL) (CONTROL PART) V D = V DB = V - CASE TEMPERATURE, T C, ( C) CURRENT SENSE VOLTAGE OUTPUT SIGNAL,V CX, (VOLTS) 6 4 3 2 INVERTER DC-LINK IGBT CURRENT VS. (CONTROL PART) V D = V DB = V 2 C 2 C 2 3 4 6 CIRCUIT CURRENT, I DP, I DN, (ma) 2.. 7.. 2. CIRCUIT CURRENT VS. CARRIER FREQUENCY (TYPICAL) (CONTROL PART) V D = V DB = V 2 C 2 C I DN 2 2 CARRIER FREQUENCY, f C, (khz) I DP 9
Functional Block Diagram C BU + C BU C BV + C BV C BW + C BW V D HVASIC LEVEL SHIFT GATE DRIVE UV LOCK-OUT U U P V P W P U N V N W N INPUT SIGNAL CONDITIONING (SHOOT-THROUGH INTERLOCK) LEVEL SHIFT LEVEL SHIFT GATE DRIVE UV LOCK-OUT GATE DRIVE UV LOCK-OUT V W P GATE DRIVE UV LOCK-OUT F O FAULT LOGIC OC/SC DETECT AMP V amp TH GND N