GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fieldeffect power transistor in a plastic envelope. BUK455 A B The device is intended for use in V DS Drainsource voltage V Switched Mode Power Supplies I D Drain current (DC) 41 38 A (SMPS), motor control, welding, P tot Total power dissipation 125 125 W DC/DC and AC/DC converters, and T j Junction temperature 175 175 C in automotive and general purpose switching applications. R DS(ON) Drainsource onstate resistance.38.45 Ω PINNING TO2AB PIN CONFIGURATION SYMBOL PIN 1 gate DESCRIPTION tab d 2 drain 3 source g tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drainsource voltage V V DGR Draingate voltage R GS = kω V ±V GS Gatesource voltage V A B I D Drain current (DC) T mb = 25 C 41 38 A I D Drain current (DC) T mb = C 29 27 A I DM Drain current (pulse peak value) T mb = 25 C 164 152 A P tot Total power dissipation T mb = 25 C 125 W T stg T j Storage temperature Junction Temperature 55 175 175 C C THERMAL RESISTANCES R th jmb Thermal resistance junction to mounting base 1.2 K/W R th ja Thermal resistance junction to K/W ambient April 1993 1 Rev 1.
STATIC CHARACTERISTICS V (BR)DSS Drainsource breakdown voltage V GS = V; I D =.25 ma V V GS(TO) Gate threshold voltage V DS = V GS ; I D = 1 ma 2.1 3. 4. V I DSS Zero gate voltage drain current V DS = V; V GS = V; T j = 25 C 1 µa I DSS Zero gate voltage drain current V DS = V; V GS = V; T j =125 C.1 1. ma I GSS Gate source leakage current V GS = ± V; V DS = V na R DS(ON) Drainsource onstate resistance V GS = V; I D = A BUK455A BUK455B.3.4.38.45 Ω Ω DYNAMIC CHARACTERISTICS g fs Forward transconductance V DS = 25 V; I D = A 8 13.5 S C iss Input capacitance V GS = V; V DS = 25 V; f = 1 MHz 16 pf C oss Output capacitance 5 7 pf C rss Feedback capacitance pf t d on Turnon delay time V DD = V; I D = 3 A; 25 ns t r Turnon rise time V GS = V; R GS = Ω; 9 ns t d off t f Turnoff delay time Turnoff fall time R gen = Ω 125 1 1 ns ns L d Internal drain inductance Measured from contact screw on 3.5 nh tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm from package to centre of die 4.5 nh L s Internal source inductance Measured from source lead 6 mm 7.5 nh from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS I DR Continuous reverse drain current 41 A I DRM Pulsed reverse drain current 164 A V SD Diode forward voltage I F = 41 A ; V GS = V 1.4 2. V t rr Q rr Reverse recovery time Reverse recovery charge I F = 41 A; di F /dt = A/µs; V GS = V; V R = V. ns µc AVALANCHE LIMITING VALUE W DSS Drainsource nonrepetitive I D = 41 A ; V DD 25 V ; mj unclamped inductive turnoff V GS = V ; R GS = Ω energy April 1993 2 Rev 1.
1 1 9 PD% Normalised Power Derating 1 1 1 1 Tmb / C Fig.1. Normalised power dissipation. PD% = P D /P D 25 C = f(t mb ) 1.1.1 Zth jmb / (K/W) D =.5.2.1.5.2 BUKx55lv D = T T t.1 1E7 1E5 1E3 1E1 1E+1 t / s Fig.4. Transient thermal impedance. Z th jmb = f(t); parameter D = t p /T P D tp tp 1 1 9 ID% Normalised Current Derating 1 1 1 1 Tmb / C Fig.2. Normalised continuous drain current. ID% = I D /I D 25 C = f(t mb ); conditions: V GS V 15 VGS / V = BUK455A 4 2 4 6 8 VDS / V Fig.5. Typical output characteristics, T j = 25 C. I D = f(v DS ); parameter V GS 8 7 6 5 BUK455. RDS(ON) / Ohm 4.5 5 5.5 6 6.5 7 7.5 BUK455A RDS(ON) = VDS/ID A B tp = us us.15. 8 DC 1 1 VDS / V 1 ms ms ms Fig.3. Safe operating area. T mb = 25 C I D & I DM = f(v DS ); I DM single pulse; parameter t p.5 VGS / V = Fig.6. Typical onstate resistance, T j = 25 C. R DS(ON) = f(i D ); parameter V GS April 1993 3 Rev 1.
Tj / C = 25 BUK455A 1 4 3 VGS(TO) / V. typ. 2 min. 1 2 4 6 8 VGS / V Fig.7. Typical transfer characteristics. I D = f(v GS ) ; conditions: V DS = 25 V; parameter T j 1 1 Tj / C Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D = 1 ma; V DS = V GS gfs / S BUK455A 1E1 SUBTHRESHOLD CONDUCTION 15 1E2 1E3 2 % typ 98 % 5 1E4 1E5 Fig.8. Typical transconductance, T j = 25 C. g fs = f(i D ); conditions: V DS = 25 V 1E6 1 2 3 4 VGS / V Fig.11. Subthreshold drain current. I D = f(v GS) ; conditions: T j = 25 C; V DS = V GS 2. a Normalised RDS(ON) = f(tj) C / pf BUKxy5 1.5 Ciss 1. Coss Crss.5 1 1 Tj / C Fig.9. Normalised drainsource onstate resistance. a = R DS(ON) /R DS(ON)25 C = f(t j ); I D = A; V GS = V VDS / V Fig.12. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = 1 MHz April 1993 4 Rev 1.
12 8 6 4 2 VGS / V VDS / V = BUK455 QG / nc Fig.13. Typical turnon gatecharge characteristics. V GS = f(q G ); conditions: I D = 41 A; parameter V DS 1 1 9 WDSS% 1 1 1 1 Tmb / C Fig.15. Normalised avalanche energy rating. W DSS % = f(t mb ); conditions: I D = 41 A IF / A BUK455A L + VDD Tj / C = 1 25 1 2 VSDS / V Fig.14. Typical reverse diode current. I F = f(v SDS ); conditions: V GS = V; parameter T j VGS VDS T.U.T. RGS ID/ R 1 shunt Fig.16. Avalanche energy test circuit. W DSS =.5 LI 2 D BV DSS /(BV DSS V DD ) April 1993 5 Rev 1.
MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5,3 3,7 1,3 2,8 5,9 min 15,8 3, not tinned 1,3 (2x) 1 2 3 2,54 2,54 3, 13,5 min,9 (3x),6 2,4 Fig.17. TO2AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostaticdischarge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO2 envelopes. 3. Epoxy meets UL94 V at 1/8". April 1993 6 Rev 1.
DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Rev 1.