Conserved Spin Quantity in Strained Hole Systems with Rashba and Dresselhaus Spin-Orbit Coupling

Similar documents
Spins and spin-orbit coupling in semiconductors, metals, and nanostructures

Spin Transport in III-V Semiconductor Structures

Anisotropic spin splitting in InGaAs wire structures

Electron spins in nonmagnetic semiconductors

Lok С. Lew Yan Voon Morten Willatzen. The k-p Method. Electronic Properties of Semiconductors. Springer

Lecture I. Spin Orbitronics

Project Report: Band Structure of GaAs using k.p-theory

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

QUANTUM WELLS, WIRES AND DOTS

Spin relaxation of conduction electrons Jaroslav Fabian (Institute for Theoretical Physics, Uni. Regensburg)

Datta-Das type spin-field effect transistor in non-ballistic regime

VERSION 4.0. Nanostructure semiconductor quantum simulation software for scientists and engineers.

Spintranszport és spindinamika nanorendszerekben Simon Ferenc

Decay of spin polarized hot carrier current in a quasi. one-dimensional spin valve structure arxiv:cond-mat/ v1 [cond-mat.mes-hall] 10 Oct 2003

Mn in GaAs: from a single impurity to ferromagnetic layers

Electron Momentum and Spin Relaxation in Silicon Films

Experimental discovery of the spin-hall effect in Rashba spin-orbit coupled semiconductor systems

Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films. Dmitry Osintsev, Viktor Sverdlov, and Siegfried Selberherr

Physics of Semiconductors

Spin scattering by dislocations in III-V semiconductors

Christian Scheller Physical Review Letters PRL 100, (2008)

Persistent spin helix in spin-orbit coupled system. Joe Orenstein UC Berkeley and Lawrence Berkeley National Lab

Lecture contents. Stress and strain Deformation potential. NNSE 618 Lecture #23

Optically induced Hall effect in semiconductors

Inter-valence-band hole-hole scattering in cubic semiconductors

Rashba spin-orbit coupling in the oxide 2D structures: The KTaO 3 (001) Surface

Spin Dynamics in Single GaAs Nanowires

Removal of spin degeneracy in p-sige quantum wells demonstrated by spin photocurrents

Lecture I. Spin Orbitronics

Orbital Mechanisms of Electron- Spin Manipulation by an Electric Field

SPINTRONICS. Waltraud Buchenberg. Faculty of Physics Albert-Ludwigs-University Freiburg

Spin orbit interaction in semiconductors

Dirac-Fermion-Induced Parity Mixing in Superconducting Topological Insulators. Nagoya University Masatoshi Sato

Calculation on the Band Structure of GaAs using k p -theory FFF042

Spin Dynamics in Semiconductors, Chapter 4 of Semiconductor Spintronics and Quantum Computation edited by D. D. Awschalom, D. Loss, and N. Samarth.

Notes on Topological Insulators and Quantum Spin Hall Effect. Jouko Nieminen Tampere University of Technology.

Spin-Orbit Interactions in Semiconductor Nanostructures

Anomalous spin suscep.bility and suppressed exchange energy of 2D holes

Spin transverse force on spin current in an electric field

Supplementary Figures

Fundamental concepts of spintronics

Nature, Vol 458, 2009 Leon Camenzind FMM University of Basel,

Effective mass: from Newton s law. Effective mass. I.2. Bandgap of semiconductors: the «Physicist s approach» - k.p method

Strained Silicon, Electronic Band Structure and Related Issues.

PHYSICAL REVIEW B 71,

Spin Currents in Mesoscopic Systems

Problem 1: Spin 1 2. particles (10 points)

VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES

Lecture 9. Strained-Si Technology I: Device Physics

Narrow-Gap Semiconductors, Spin Splitting With no Magnetic Field and more.. Giti Khodaparast Department of Physics Virginia Tech

M.S. Dresselhaus G. Dresselhaus A. Jorio. Group Theory. Application to the Physics of Condensed Matter. With 131 Figures and 219 Tables.

Improved Superlattices for Spin-Polarized Electron Sources

Spintronics: a step closer to the "The Emperor's New Mind" Ferenc Simon

Quantum Spin Hall Effect in Inverted Type II Semiconductors

Two-dimensional electron gases in heterostructures

Coherent Control of a Single Electron Spin with Electric Fields

Citation for published version (APA): Filip, A. T. (2002). Spin polarized electron transport in mesoscopic hybrid devices s.n.

Energy Band Calculations for Dynamic Gain Models in Semiconductor Quantum Well Lasers

arxiv:cond-mat/ v1 25 Mar 2004

Spin Filtering: how to write and read quantum information on mobile qubits

arxiv:cond-mat/ v1 [cond-mat.mes-hall] 17 Sep 1997

Spin-orbit coupling fields in Fe/GaAs heterostructures

Acoustically induced spin relaxation in two-dimensional electronic systems

What so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Spin-polarization in quantum wires: Influence of Dresselhaus spin-orbit interaction and crosssection

Columnar quantum dots (QD) in polarization insensitive SOA and non-radiative Auger processes in QD: a theoretical study

Electric current-induced spin orientation in quantum well structures

arxiv: v2 [cond-mat.mes-hall] 14 Jul 2009

Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current

Gauge Physics of Spin Hall Effect

Supporting Information for Quantized Conductance and Large g-factor Anisotropy in InSb Quantum Point Contacts

Microelectronics Reliability

Applicability of the k p method to the electronic structure of quantum dots

InAs quantum dots: Predicted electronic structure of free-standing versus GaAs-embedded structures

SIGNATURES OF SPIN-ORBIT DRIVEN ELECTRONIC TRANSPORT IN TRANSITION- METAL-OXIDE INTERFACES

Spin Hall and quantum spin Hall effects. Shuichi Murakami Department of Physics, Tokyo Institute of Technology PRESTO, JST

Physics of Semiconductors (Problems for report)

Defense Technical Information Center Compilation Part Notice

Energy Spectrum and Broken spin-surface locking in Topological Insulator quantum dots

Charge transport in oxides and metalinsulator

Surface Majorana Fermions in Topological Superconductors. ISSP, Univ. of Tokyo. Nagoya University Masatoshi Sato

Supplementary material: Nature Nanotechnology NNANO D

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES

Surfaces, Interfaces, and Layered Devices

From Last Time Important new Quantum Mechanical Concepts. Atoms and Molecules. Today. Symmetry. Simple molecules.

Supporting Information:

Tunneling Spectroscopy of Disordered Two-Dimensional Electron Gas in the Quantum Hall Regime

Manipulation of Majorana fermions via single charge control

On depolarisation in 0D systems: Lamb-like level shift

Accurate validation of experimental results of interdiffused. InGaAs/GaAs strained quantum wells by suitable numerical.

Performance Enhancement of P-channel InGaAs Quantum-well FETs by Superposition of Process-induced Uniaxial Strain and Epitaxially-grown Biaxial Strain

Introduction to Optoelectronic Device Simulation by Joachim Piprek

THEORY OF THE GAIN CHARACTERISTICS OF InGaN/AlGaN QD LASERS. A.D. Andreev * and E.P. O Reilly **

Hartmut Buhmann. Physikalisches Institut, EP3 Universität Würzburg Germany

Tobias Dollinger Spin transport in two-dimensional electron and hole gases

Spin-orbit Effects in Semiconductor Spintronics. Laurens Molenkamp Physikalisches Institut (EP3) University of Würzburg

Quantum Spin Hall Effect in Graphene

Supporting Information

STRAIN EFFECTS ON THE VALENCE BAND OF SILICON: PIEZORESISTANCE IN P-TYPE SILICON AND MOBILITY ENHANCEMENT IN STRAINED SILICON PMOSFET

Transcription:

Conserved Spin Quantity in Strained Hole Systems with Rashba and Dresselhaus Spin-Orbit Coupling Paul Wenk, Michael Kammermeier, John Schliemann, Klaus Richter, Roland Winkler SFB Workshop Bernried 30.09.2014 SFB 689

Nonballistic Spin-FET Characteristics of considered systems: Uncorrelated, weak disorder (Ioffe-Regel criterion) Spin-independent scattering of carriers Presence of spin-orbit-coupling (SOC) After every collision the carrier is effected by an other SO field e.g. Rashba SOC. Problem: In the s-band D'yakonov-Perel' Spin Relaxation or Elliot-Yafet-SR,... 2 [D yakonov, Sov.Phys.JETP (1971)] [P.W, Handbook on Nanophysics, Taylor& Francis (2010)]

Nonballistic Spin-FET Characteristics of considered systems: Uncorrelated, weak disorder (Ioffe-Regel criterion) Spin-independent scattering of carriers Presence of spin-orbit-coupling (SOC) After every collision the carrier is effected by an other SO field e.g. Rashba SOC. Problem: In the s-band D'yakonov-Perel' Spin Relaxation or Elliot-Yafet-SR,... Goal: As proposed in PRL 90,146801 (2003) by JS: Switching spin relaxation on/off on state Lin. Rashba lin. Dresselhaus in a [001] 2DEG Device operation: off state 3 [D yakonov, Sov.Phys.JETP (1971)] [P.W, Handbook on Nanophysics, Taylor& Francis (2010)]

on-state in 2DEG When linear Rashba linear Dresselhaus in a [001] 2DEG For 2DEG: Two persistent solutions for the spin-density s: 4 [P.W, Handbook on Nanophysics, Taylor& Francis (2010)]

Approach in Hole Systems Recall Starting point in our paper PRB 90.115306(2014) (with T.Dollinger) presented last year: - Luttinger Hamiltonian with Rashba+Dresselhaus SOC for a zinc blende crystal system - Inclusion of a confinement (in [001] direction) 2DHG - Loewdin perturbation effective 2x2 Hamiltonian Similar approach by Sacksteder et al., PRB 89.161307(2014) but - no Dresselhaus SOC - strain included via Bir-Pikus Hamiltonian - however: inconsistent application of Loewdin perturbation 5

Bulk Hole-Hamiltonian Luttinger's Hamiltonian for III-V semiconductors (valence band Γ8v) with Dresselhaus and Rashba SOC Luttinger parameters Ji : angular momentum matrices for j=3/2 6

Bulk Hole-Hamiltonian Luttinger's Hamiltonian for III-V semiconductors (valence band Γ8v) with Dresselhaus and Rashba SOC Luttinger parameters Contribution due to bulk-inversion asymmetry (BIA) Ji : angular momentum matrices for j=3/2 7

Bulk Hole-Hamiltonian Luttinger's Hamiltonian for III-V semiconductors (valence band Γ8v) with Dresselhaus and Rashba SOC Luttinger parameters Contribution due to structureinversion asymmetry (SIA) by applying an electric field E, Ji : angular momentum matrices for j=3/2 Here 8

Bulk Hole-Hamiltonian Luttinger's Hamiltonian for III-V semiconductors (valence band Γ8v) with Dresselhaus and Rashba SOC Luttinger parameters Assume to be small Ji : angular momentum matrices for j=3/2 9

Previous Results: 2DHG PRB 90.115306(2014) Gapless triplet mode in Cooperon spectrum Persistent spin-state if PRB 89.161307(R)(2014) Bir-Pikus strain Hamiltonian 10

Previous Results: 2DHG PRB 90.115306(2014) Gapless triplet mode in Cooperon spectrum Persistent spin-state if PRB 89.161307(R)(2014) Bir-Pikus strain Hamiltonian Useful: recast in VF In-plane strain amplitude orientation 11

Previous Results: 2DHG PRB 90.115306(2014) Gapless triplet mode in Cooperon spectrum Persistent spin-state if PRB 89.161307(R)(2014) Persistent spin-state if Bir-Pikus strain Hamiltonian Useful: recast in VF In-plane strain amplitude orientation 12

Problems PRB 90.115306(2014) Persistent spin-state if PRB 89.161307(R)(2014) Persistent spin-state if Example by Sacksteder et al., Boron doped diamond is wrong, rather ( Niels Christensen priv. communication), 13

Problems PRB 90.115306(2014) Persistent spin-state if Is it correct to use the bulk Rashba parameter when deriving the 2DHG Hamiltonian? PRB 89.161307(R)(2014) Persistent spin-state if Sacksteder et al.: electric pot. Rashba contribution in 2nd order LP? 14

A Way Out Include Rashba SOC, Dresselhaus SOC and biaxial/uniaxial in-plane strain When applying the confinement to generate 2DHG, note: Loewdin perturbation (LP) for lowest HH(LH)-like subband with Rashba bulk parameter gives not the dominant contribution due to Rashba SOC, subband gaps dominate! Rederive Rashba SOC for confined 2DHG: In contrast to Sacksteder et al.: 3Rd order LP and at least 3 subbands necessary! Search for a conserved spin quantity in an experimentally accessible part of the parameter-space. 15

Results Effective vector field due to Rashba and Dresselhaus SOC in case of a... HH-like ground state LH-like ground state 16

Results Effective vector field due to Rashba and Dresselhaus SOC in case of a... HH-like ground state LH-like ground state Rashba SOC in 3rd order LP! 17

Conserved Spin Quantity Example: InSb Here we present only the case for the HH-like ground state. Using Dresselhaus/Rashba deviation from spherical sym. Strain amplitude Quantum well width 18

Conserved Spin Quantity Example: InSb Here we present only the case for the HH-like ground state. Using Dresselhaus/Rashba deviation from spherical sym. Strain amplitude Quantum well width Uniaxial compression in [110] direction 19

Conserved Spin Quantity Example: InSb Thank you for your attention! SFB 689 Uniaxial compression in [110] direction 20

Conserved Spin Quantity Example: InSb Experimental coefficients and parameters used For the InSb example: Uniaxial compression in [110] direction 21

Reduced Luttinger Parameter Using extended Kane model (14x14) If we neglect all remote band contributions in the valence band block, [H.Mayer, U. Roessler, PRB 44.9048(1991)] 22

Shift of the ground HH and LH subband Problem: Only in-plane biaxial tensile stress 23 [Y.Sun et al., Strain Effects in Semiconductors, Springer (2010)]

Bir-Pikus Strain Hamiltonian are the three deformation potentials corresponding to strain tensors with symmetries [G.E.Pikus, G.L. Bir, Sov. Phys. Solid State 1, 1502 1517 (1960)] 24

Persistent Solutions in 2DEG When linear Rashba Spin-orbit field uniform in linear Dresselhaus in a [001] 2DEG direction Two persistent solutions for the spin-density s: 25 [P.W, Handbook on Nanophysics, Taylor& Francis (2010)]

Loewdin Perturbation Theory A B 26

Loewdin Perturbation Theory Indices m, m', m'': Block A Indices l, l', l'' : Block B 27

Expansion Coefficients: BIA 28 [R. Winkler, Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems, (2003)]

Expansion Coefficients: SIA 29 [R. Winkler, Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems, (2003)]

Suitable Compounds 30