High efficiency silicon and perovskite-silicon solar cells for electricity generation

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High efficiency silicon and perovskite-silicon solar cells for electricity generation Ali Dabirian Email: dabirian@ipm.ir 1

From Solar Energy to Electricity 2

Global accumulative PV installed In Iran it is about 100 MW. Total national grid capacity 75 GW. 3

Grid-parity in PV is already there Swanson PV curve. 05.09.2015 4

Photovoltaics Technology 5

Photovoltaics 1) Sunlight is absorbed by a semiconductor material and its energy is transferred to an electron 2) In presence of an electric field, electric charges can be separated E scale E g electron light hole V X axis J 3) The electricity can be used! 6

7 Fundamental limit of efficiency Single junction ~ In the Schockley-Queisser radiative limit (radiative equilibrium of cell with the sun for a single semiconductor junction) 33% Under concentration can be increased by a few percent! Source U. Sydney, only bandgap Ok, efficiencies might have increased Radiative Recombination Limit: W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961).

Market Major PV technologies Crystalline silicon Mono and multicrystalline Status: main market share Thin films CIGS, CdTe, Thin film silicon Status: stabilised market share Concentrator technologies Mostly III-V based Status: trying entering the market, many start-ups Emerging technologies Nano inorganic (Quatum dot) Organic-Polymer, perovskites Dye sensitized and variations Status: niche application 8

PV Technologies market share Crystalline Si technology does and will hold >90% of PV market share. Alternative low-cost technologies have not came close to Si efficiencies and price levels. 9

Crystalline Si terminology Wafer Cell: processed wafer (20-30 steps) Module (a number of cells that are put in series with a two socket as energy output) 10

Crystalline Si supply chain 1. Solar grade Si 2. Ingot 3. Wafering 4. Cell processing 5. Module Features Full metal rear side Screen printed front grid no local features On the market: = 14-21% on monocrystalline Si PV modules = 12-18% on multicrystalline Si PV modules 11

Dangling bonds and surface passivation At any semiconductor surface the crystal symmetry is broken Localized electronic states in the bandgap (whatever the surface condition: bare, in contact with a metallic or oxidized surfaces) recombination sink for carriers. Recombination can be avoided by Minimizing the number of defects at the surface By creating a local electrical field that repels the minority carriers a) with additional dopants n + or p - b) with fixed charges that can create an inversion layer By combining the different effects 12

Interface defect density How does surface passivation work? bare surface field effect defect reduction Two fundamentally different ways to avoid surface recombination: 1. Repelling of generated carriers from surface by electrical field 2. Chemical passivation of surfacestates field effect 13

For good devices: Intrinsic films Go towards the amorphous-to-crystalline transition as much as possible, but NO EPITAXY! Use highly depleted silane plasmas H 2 plasma during a-si:h growth ( layer-by-layer ) Layer properties Increase in hydrogen content Increase in band gap More disordered Etching effect if H 2 plasma is too long Globally beneficial for devices 5-20 mv gain in V oc [Geissbuehler et al., APL 102, 231604 (2013)] 14

15 Surface passivation measurement - Measurement of the photoconductivity - Linked with the carrier density in the wafer - If bulk is high, surface passivation quality may be evaluated. A. Descoeudres et al. IEEE JPV 2013 Passivating layers cc-si substrate http://www.sintoninstruments.com

Al-BSF, PERC 16

TOP-Con 2014 by Fraunhofer ISE, 25.1% 17

Heterojunction solar cell (Panasonic HIT ) World records: 25.1% (standard): Keyocera Co. 26.33% (IBC): Kaneka Co. 18

World record of Silicon PV with HIT technology March 2017 19

Efficiences Beyond Si Fundamental Limits 20

Multijunction concept 21

III-V+ Si Tandems 22

Perovskite/c-Si Multi-junction cell CH 3 NH 3 PbI 3 bandgap is 1.56 ev c-si bandgap is 1.1 ev 23

Efficiency beyond 26.33% using perovskite-si tandem P.Loper et al. IEEE JPV., 2015. 24

Most efficient monolithic perovskite/silicon tandem 11.06.2018 Oxford PV reports 25.2 % 156 mm x 156 mm perovskite-silicon tandem solar cells at the company s industrial pilot line in Brandenburg an der Havel, Germany.(15.06.2018) 25

Our Research at IPM on Si and Tandem Cells (1. Theory and Simulation) A. Dabirian et al. IEEE Journal of Photovoltaics, 7, 718, (2017). B. Eftekharinia, et al, (in preparation) 26

2. Our Research at IPM on Si Solar Cell Characterization Solar cell measurement setups: 1- Temperature variable IV tester 2- Localized characterization of solar cells 27

3. Our Research at IPM on Si PV Modules 1- Novel encapsulation methods 2- Colored cells Glass Polymer Solar cell Polymer Backsheet or glass A. Dabirian et al. patent pending. 28

4. Our Research at IPM on Fabrication of Tandem Cells Gas-phase deposition of perovskites for tandems 29

Acknowledgements Dr. Behrooz Eftekharinia Hossein Pezeshki Tahereh Hamedi Samaneh Eftekhari 30

Thank you! Questions and Answers Email: dabirian@ipm.ir 31