Preliminary Technical Information Polar TM HiPerFET TM Power MOSFET ( Electrically Isolated Tab) V DSS I D25 R DS(on) t rr = V = 2A 3mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS i5-pak TM Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C V V DGR = 25 C to 1 C, R GS = 1MΩ V S Continuous ± V M Transient ± V I D25 = 25 C 2 A I DM = 25 C, Pulse Width Limited by M A I A = 25 C A E AS = 25 C 2 J dv/dt I S I DM, V DD V DSS, 1 C V/ns P D = 25 C 5 W -55... +1 C M 1 C T stg -55... +1 C T L Maximum Lead Temperature for Soldering C T SOLD Plastic Body for s 26 C V ISOL /6 Hz, RMS, 1 minute 2 V~ I ISOL 1mA t = 1s V~ F C Mounting Force..1/.5..27 N/lb. Weight g Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 3mA V (th) V DS =, I D = 1mA 3.5 6.5 V G S Features D G = Gate D = Drain S = Source Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Advantages Easy Assembly Space Savings High Power Density Applications Isolated Tab Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls I GSS = ± V, V DS = V ± na I DSS V DS = V DSS, = V μa Note 2, = 5 C 5 ma R DS(on) = V, I D = A, Note 1 3 mω IXYS CORPORATION, All Rights Reserved DS999B(1/)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. ISOPLUS i5-pak TM (IXFL) Outline g fs V DS = V, I D = A, Note 1 17 29 S C iss 21 nf C oss = V, V DS = 25V, f = 1MHz 15 pf C rss 77 pf R Gi Gate input resistance. Ω t d(on) Resistive Switching Times 7 ns t r 62 ns V t GS = V, V DS =.5 V DSS, I D = A d(off) ns R t G = 1Ω (External) f 51 ns Q g(on) 36 nc Q gs = V, V DS =.5 V DSS, I D = A 1 nc Q gd nc R thjc.2 C/W R thcs.15 C/W Source-Drain Diode Characteristic Values = 25 C Unless Otherwise Specified) Min. Typ. Max. I S = V 32 A I SM Repetitive, Pulse Width Limited by M A V SD I F = I S, = V, Note 1 1.5 V t rr ns I Q F = 25A, -di/dt = A/μs RM 1.9 μc V R = V, = V I RM 15. A PIN 1 = Gate PIN 2 = Source PIN 3 = Drain Tap = Electricall isolated 2V SYM INCHES MILLIMETER MIN MAX MIN MAX A.19.5.3 5.21 A1.2.11 2.59 3. A2.6.55 1.17 1. b.5.55 1.1 1. b1.63.72 1.6 1.3 b2.5.6 1.7 1.73 c..29.51.7 D 1. 1. 25.91 26.2 E.77.799 19.56.29 e.1 BSC 3.1 BSC e1. BSC 11.3 BSC L.7. 19.1.3 L1..2 2.3 2.59 Q.2.235 5.33 5.97 Q1.9.513.5 13.3 R.1. 3.1.57 R1..1 2.5 3. S.66.69.97 17.53 T.1.21.3.5 U.65. 1.65 2.3 Notes: 1. Pulse test, t μs, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,592,931, 5,9,961 5,237,1 6,2,665 6,,65 B1 6,63,3 6,727,55 7,5,73 B2 7,157,33B2 by one or more of the following U.S. patents:,,72 5,17, 5,63,7 5,31,25 6,259,3 B1 6,53,33 6,7,5 B2 6,759,692 7,63,975 B2,1,6 5,3,796 5,17,117 5,6,715 6,6,72 B1 6,53,5 6,7,63 6,771,7 B2 7,71,537
Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 32 2 = V 9V 7 6 = V 9V 2 V V 7V 7V 1 2 3 5 6 7 9 5 15 25 32 2 Fig. 3. Output Characteristics TJ = 5ºC = V V 3. 2.6 Fig.. R DS(on) Normalized to I D = A Value vs. Junction Temperature = V 2 7V RDS(on) - Normalized 2.2 1. 1. 1. I D = 32A I D = A 6V.6 2 6 1 1 22.2 - -25 25 75 5 1 - Degrees Centigrade 2.6 Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current 2 Fig. 6. Maximum Drain Current vs. Case Temperature 2. 2.2 = V = 5ºC 2 RDS(on) - Normalized 2. 1. 1.6 1. 1.2 = 25ºC 1.. 6 7 I D - Amperes - -25 25 75 5 1 - Degrees Centigrade IXYS CORPORATION, All Rights Reserved
Fig. 7. Input Admittance Fig.. Transconductance 7 5 6 = - ºC 35 25 = 5ºC 25ºC - ºC g f s - Siemens 25ºC 5ºC 15 5 5. 5.5 6. 6.5 7. 7.5..5 9. - Volts 5 15 25 35 5 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge IS - Amperes 9 7 6 = 5ºC = 25ºC VGS - Volts 1 6 V DS = 6V I D = A I G = ma 2.3..5.6.7..9 1. 1.1 1.2 V SD - Volts 1 2 3 Q G - NanoCoulombs, Fig. 11. Capacitance Fig.. Forwar-Bias Safe Operating Area R DS(on) Limit Capacitance - PicoFarads, 1, f = 1 MHz C iss C oss C rss 1.1 = 1ºC Tc = 25ºC Single Pulse DC 25µs µs 1ms ms ms 5 15 25 35.1 1,, IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 13. Maximum Transient Thermal Impedance 1.. Z(th)JC - ºC / W..1.1.1.1.1 1 Pulse Width - Seconds IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N1P(99)1-22--C
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