High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C, R GS = M 5 V S Continuous 3 V M Transient V I D5 = 5 C 3 A I DM = 5 C, Pulse Width Limited by M 9 A I A = 5 C 3 A E AS = 5 C 5 mj dv/dt I S I DM, V DD S, 5 C 5 V/ns P D = 5 C 5 W - 55... +5 C M 5 C T stg - 55... +5 C T L Maximum Lead Temperature for Soldering 3 C T SOLD Plastic Body for s C M d Mounting Torque.3 / Nm/lb.in. Weight g Features G D S G = Gate D = Drain S = Source Tab = Drain International Standard Package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 9 V- Flammability Classification Advantages Easy to Mount Space Savings High Power Density Tab ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = V = 5 A 5 V Applications High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits (th) = = 5 A 5. V I GSS = 3V, = V na I DSS = S, = V A = 5 C A R DS(on) = V = I D5, Note 7.3 3 IXYS CORPORATION, All Rights Reserved DS8C(/3)
( = 5 C, Unless Otherwise Specified) Min. Typ. Max. TO-7 (IXTH) Outline g fs = V = I D5, Note. 3. S C iss 375 pf C oss = V, = 5V, f = MHz 9 pf C rss 3 pf R GI Gate Input Resistance t d(on) Resistive Switching Times 9 ns t r = V, = S = I D5 ns t d(off) ns R G = 5 (External) t f 5 ns Q g(on) 38. nc Q gs = V, = S = I D5.5 nc Q gd 9. nc R thjc C/W R thcs. C/W - Gate, - Drain 3 - Source Source-Drain Diode ( = 5 C, Unless Otherwise Specified) Min. Typ. Max I S = V, Note 3 A I SM Repetitive, Pulse Width Limited by M A V SD I F = I S, = V, Note.3 V t rr I.9 s F = A, -di/dt = A/μs Q RM.7 C V I R = V RM 5 A Note:. Pulse test, t 3 s, duty cycle, d %. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,835,59,93,8 5,9,9 5,37,8,,5,,5 B,83,3,77,585 7,5,73 B 7,57,338B by one or moreof the following U.S. patents:,8,7 5,7,58 5,3,37 5,38,5,59,3 B,53,33,7,5 B,759,9 7,3,975 B,88, 5,3,79 5,87,7 5,8,75,3,78 B,583,55,7,3,77,78 B 7,7,537
.5. 3.5 Fig.. Output Characteristics @ = 5ºC = V 7V V Fig.. Output Characteristics @ = 5ºC = V V 5.5V 5V 5V V 8 8 3 - Volts - Volts V Fig. 3. R DS(on) Normalized to I D = A Value vs. Junction Temperature. Fig.. R DS(on) Normalized to I D = A Value vs. Drain Current RDS(on) - Normalized...8. = V I D = 3A I D = A RDS(on) - Normalized...8... = V = 5ºC = 5ºC.. -5-5 5 5 75 5 5 - Degrees Centigrade.8 3.5..5 I D - Amperes 3.5 Fig. 5. Maximum Drain Current vs. Case Temperature Fig.. Input Admittance = 5ºC 5ºC - ºC -5-5 5 5 75 5 5 - Degrees Centigrade 3. 3....8 5. 5.. - Volts 3 IXYS CORPORATION, All Rights Reserved
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 7 9 = - ºC 8 7 g f s - Siemens 5 3 5ºC 5ºC IS - Amperes 5 3 = 5ºC = 5ºC 3.5 I D - Amperes.3...7.8.9 V SD - Volts Fig. 9. Gate Charge, Fig.. Capacitance VGS - Volts 8 = 75V I D = A I G = ma Capacitance - PicoFarads, f = MHz C iss C oss C rss Q G - NanoCoulombs - Volts Fig.. Maximum Transient Thermal Impedance Fig.. Forward-Bias Safe Operating Area R DS(on) Limit 5µs µs Z(th)JC - ºC / W.. = 5ºC DC ms ms ms = 5ºC Single Pulse. Pulse Width - Seconds,, - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_3N5(N)---A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.