High Voltage, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advance Technical Information V CS = V = A V C(sat).V TO-HV (IXBT) Symbol Test Conditions Maximum Ratings V CS = C to C V V CGR = C to C, R G = M V V GS Continuous ± V V GM Transient ± V = C 7 A = C A M = C, ms A SSOA V G, T VJ = C, R G M = A (RBSOA) Clamped Inductive Load V CS V T SC V G, = C, (SCSOA) R G =, V C = V, Non-Repetitive μs P C = C W -... + C M C T stg -... + C T L Maximum Lead Temperature for Soldering C T SOLD Plastic Body for s C M d Mounting Torque (TO-7HV)./ Nm/lb.in Weight TO-HV g TO-7HV g Features G High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage TO-7HV (IXBH) G C C (Tab) C (Tab) G = Gate C = Collector = mitter Tab = Collector Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. BV CS = μa, V G = V V V G(th) = μa, V C = V G.. V S V C = V CS, V G = V μa = C μa I GS V C = V, V G = ± V ± na V C(sat) = A, V G, Note.9. V = C. V Advantages Low Gate Drive Requirement High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches IXYS CORPORATION, All Rights Reserved DS(/)
Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. g fs = A, V C = V, Note 7 S C ies pf C oes V C = V, V G = V, f = MHz pf C res pf Q g(on) nc Q ge = A, V G, V C = V nc Q gc nc ns t ri Inductive load, = C ns on = A, V G. mj t d(off) V C = V, R G ns t fi Note ns off. mj ns t ri Inductive load, = C ns on = A, V G. mj t d(off) V C = V, R G 7 ns t fi Note ns off. mj ns Resistive load, T t J = C r ns = A, V G t d(off) ns V C = 9V, R G t f ns ns Resistive load, T t J = C r 9 ns = A, V G t d(off) ns V C = 9V, R G t f ns TO-HV Outline L L e e TO-7HV Outline D R D A L D L PINS: - Gate - mitter - Collector P Q L L S C A C A A A X A A H D P D D X b D D R thjc.9 C/W R thcs TO-7HV. C/W Reverse Diode e e c b X PINS: - Gate - mitter, - Collector b X Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max V F I F = A, V G = V, Note. V t rr.7 μs I I F = A, V G = V, -di F /dt = A/μs RM A V Q R = V, V G = V RM μc Note:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher V C (clamp), or R G. ADVANC TCHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFTs and IGBTs are covered,,9,9,,9,9,7,,,,, B,,,77, 7,,7 B 7,7,B by one or more of the following U.S. patents:,,7,7,,,7,,,9, B,,,7, B,79,9 7,,97 B,,,,79,7,7,,7,,7 B,,,7,,77,7 B 7,7,7
Fig.. Output Characteristics @ = ºC Fig.. xtended Output Characteristics @ = ºC V G = V 9V V V V 9V V G = V V 9V 7V V 7V V V 9V V..... V C - Volts 7V V C - Volts Fig.. Output Characteristics @ = ºC V G = V V 7V V V V...... V C - Volts 9V 7V V V VC(sat) - Normalized.7........9. V G Fig.. Dependence of V C(sat) on = A = A.7 - - 7 - Degrees Centigrade = A Fig.. Collector-to-mitter Voltage vs. Gate-to-mitter Voltage Fig.. Input Admittance 7 = ºC VC - Volts = A A = ºC ºC - ºC 7 9 V G - Volts A.... 7 7.. 9 9. V G - Volts IXYS CORPORATION, All Rights Reserved
Fig. 7. Transconductance Fig.. Gate Charge = - ºC V C = V = A I G = ma g f s - Siemens ºC ºC VG - Volts 7 - Amperes 7 9 Q G - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Capacitance, T JJ = ºC ºC f = MHz IF - Amperes V G = V Capacitance - PicoFarads, C ies C oes V G C res.... V F - Volts V C - Volts Fig.. Reverse-Bias Safe Operating Area Fig.. Maximum Transient Thermal Impedance Z(th)JC - ºC / W.. = ºC R G = Ω dv / dt < V / ns V C - Volts...... Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
Fig.. Forward-Bias Safe Operating Area @ = ºC Fig.. Forward-Bias Safe Operating Area @ = 7ºC V C(sat) Limit V C(sat) Limit µs µs ms µs µs ms. = ºC = ºC ms Single Pulse DC ms.,, V C - Volts. = ºC = 7ºC ms Single Pulse ms DC.,, V C - Volts Fig.. Inductive Switching nergy Loss vs. Gate Resistance Fig.. Inductive Switching nergy Loss vs. Collector Current off - MilliJoules off on - - - - = ºC, V G V C = V = A on - MilliJoules off - MilliJoules off on - - - - = ºC, V G V C = V = ºC = ºC on - MilliJoules = A R G - Ohms - Amperes Fig. 7. Inductive Switching nergy Loss vs. Fig.. Inductive Turn-off Switching Times vs. Gate Resistance 9 off - MilliJoules off on - - - - RG = Ω, V G V C = V = A = A on - MilliJoules t f i - Nanoseconds t f i t d(off) - - - - = ºC, VG VC = V = A = A 7 t d(off) - Nanoseconds 7 9 - Degrees Centigrade R G - Ohms IXYS CORPORATION, All Rights Reserved
Fig. 9. Inductive Turn-off Switching Times vs. Collector Current Fig.. Inductive Turn-off Switching Times vs. t f i t d(off) - - - - R G = Ω, V G 7 t f i t d(off) - - - - R G = Ω, V G 7 t f i - Nanoseconds V C = V = ºC = ºC t d(off) - Nanoseconds t f i - Nanoseconds V C = V = A = A t d(off) - Nanoseconds = A - Amperes 7 9 - Degrees Centigrade Fig.. Inductive Turn-on Switching Times vs. Gate Resistance 7 Fig.. Inductive Turn-on Switching Times vs. Collector Current t r i - Nanoseconds t r i - - - - = ºC, V G V C = V = A = A t d(on) - Nanoseconds t r i - Nanoseconds t r i - - - - R G = Ω, V G V C = V = ºC = ºC - Nanoseconds R G - Ohms - Amperes 7 Fig.. Inductive Turn-on Switching Times vs. t r i - - - - R G = Ω, V G t r i - Nanoseconds V C = V = A = A 9 - Nanoseconds 7 9 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS RF: B_N(H7-B)---A
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