BiMOSFET TM Monolithic Bipolar MOS Transistor High Voltage, High Frequency Advance Technical Information S = 3V = A (sat) 2.9V Symbol Test Conditions Maximum Ratings S = 25 C to C 3 V V CGR = 25 C to C, R GE = M 3 V V GES Continuous ± V V GEM Transient ± 3 V 25 = 25 C 25 A = C A M = 25 C, ms 4 A SSOA V GE = 5V, T VJ = 25 C, R G = 5 M = A (RBSOA) Clamped Inductive Load.8 S V T SC V GE = 5V, = 25 C, (SCSOA) R G =, = V, Non-Repetitive μs P C = 25 C 6 W - 55... + C M C T stg - 55... + C T L Maximum Lead Temperature for Soldering C T SOLD Plastic Body for s 2 C F C Mounting Force../4.5..27 N/lb Weight 6 g Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BS = 2μA, V GE = V 3 V V GE(th) = 2μA, = V GE 3. 5. V ES =.8 S, V GE = V 25 μa Note 2, = 25 C ma I GES = V, V GE = ± V ± na TO-247PLUS-HV G E G = Gate E = Emitter C = Collector Tab = Collector Features C Tab High Blocking Voltage High Voltage Package Low Conduction Losses Advantages Easy to Mount Space Savings High Power Density Applications Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits Laser Generators (SAT) = 5V, Note 2.4 2.9 V = 25 C 3. V 6 IXYS CORPORATION, All Rights Reserved DS624A(2/6)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = V, Note 24 S C ies 399 pf C oes = 25V, V GE = V, f = MHz 95 pf C res pf Q g(on) 2 nc Q ge = 5V, = V 27 nc Q gc 77 nc t d(on) 46 ns Resistive load, T t J = 25 C r 4 ns = 5V t d(off) 5 ns = 9V, R G = 5 t f 7 ns t d(on) 44 ns Resistive load, = 25 C t r 845 ns = 5V t d(off) V 2 ns CE = 9V, R G = 5 t f 67 ns R thjc.9 C/W R thcs.5 C/W Reverse Diode Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max V F I F = V, Note 3. V t rr I F = 25A, V GE = V, -di F /dt = A/μs.7 μs I RM V R = V, V GE = V 48 A Q RM μc Notes:. Pulse test, t μs, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,4,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or more of the following U.S. patents: 4,8,72 5,7,8 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,5 6,7,463 6,77,478 B2 7,7,537
Fig.. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC V GE = 25V 2V 7V 5V 3V V 9V 7V 2 V GE = 25V 9V 5V 3V V 9V 7V 5V.5.5 2 2.5 3 3.5 4 - Volts 5V 5 5 25 - Volts Fig. 3. Output Characteristics @ = 25ºC V GE = 25V 9V 5V 3V V 9V 7V VCE(sat) - Normalized.8.6.4.2. V GE = 5V Fig. 4. Dependence of (sat) on Junction Temperature = A = A.8 = 25A.5.5 2 2.5 3 3.5 4 4.5 5 - Volts 5V.6 - -25 25 75 25 - Degrees Centigrade 7 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6 = 25ºC VCE - Volts 5 4 3 2 = A A 25A = 25ºC 25ºC - ºC 6 7 8 9 2 3 4 5 V GE - Volts 3 4 5 6 7 8 9 V GE - Volts 6 IXYS CORPORATION, All Rights Reserved
Fig. 7. Transconductance Fig. 8. Gate Charge 7 6 = - ºC 4 = V = A g f s - Siemens 3 25ºC 25ºC VGE - Volts 2 8 6 I G = ma 4 2 - Amperes 2 Q G - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode, Fig.. Capacitance 2 T JJ = 25ºC 25ºC C ies IF - Amperes V GE = V Capacitance - PicoFarads, C oes C res V GE = 5V f = MHz 2 3 4 5 6 7 V F - Volts 5 5 25 3 35 - Volts 2 Fig.. Reverse-Bias Safe Operating Area Fig. 2. Maximum Transient Thermal Impedance Z(th)JC - ºC / W.. = 25ºC R G = 5Ω dv / dt < V / ns 2 3 - Volts...... Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
Fig. 3. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 4. Resistive Turn-on Rise Time vs. Collector Current 9 R G = 5Ω, V GE = 5V = 9V R G = 5Ω, V GE = 5V = 9V t r - Nanoseconds 7 = A = A t r - Nanoseconds = 25ºC = 25ºC 25 35 45 55 65 75 85 95 5 5 25 - Degrees Centigrade 25 35 45 55 65 75 85 95 5 - Amperes Fig. 5. Resistive Turn-on Switching Times vs. Gate Resistance 3 2 Fig. 6. Resistive Turn-off Switching Times vs. Junction Temperature 23 t r t d(on) - - - - = 25ºC, V GE = 5V t f t d(off) - - - - R G = 5Ω, V GE = 5V 2 t r - Nanoseconds 9 = 9V = A, A 9 7 t d(on) - Nanoseconds t f - Nanoseconds = 9V = A 2 9 t d(off) - Nanoseconds 7 3 = A 7 5 5 25 3 35 R G - Ohms 25 35 45 55 65 75 85 95 5 5 25 - Degrees Centigrade 3 Fig. 7. Resistive Turn-off Switching Times vs. Collector Current 2 Fig. 8. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds t f t d(off) - - - - R G = 5Ω, V GE = 5V = 9V = 25ºC, 25ºC 2 2 2 t d(off) - Nanoseconds t f - Nanoseconds 2 t f t d(off) - - - - = 25ºC, V GE = 5V = 9V = A = A 9 7 t d(off) - Nanoseconds 25 35 45 55 65 75 85 95 5 - Amperes 5 5 25 3 35 R G - Ohms 6 IXYS CORPORATION, All Rights Reserved
Fig. 9. Forward-Bias Safe Operating Area @ = 25ºC Fig.. Forward-Bias Safe Operating Area @ = 75ºC (sat) Limit (sat) Limit 25µs µs ms 25µs µs ms = ºC. = 25ºC ms Single Pulse DC ms.,, - Volts = ºC. = 75ºC Single Pulse ms DC ms.,, - Volts TO-247PLUS-HV Outline - Gate 2 - Emitter 3,4 - Collector IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_N3(H8) 7-25-4
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