Energy dissipation in single-electron devices at high-frequencies

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Energy dissipation in single-electron devices at high-frequencies M. Fernando Gonzalez-Zalba Hitachi Cambridge Laboratory, Cambridge, UK MicroEnergy2017 07/07/2017 Hitachi, Ltd. 2016. All rights reserved.

Contents 1. Transistor downscaling 2. Introduction to single-electron devices 3. Dissipation in single-electron devices at high frequencies 4. Conclusions Hitachi, Ltd. 2014. All rights reserved. 1

The MOSFET: workhorse of the ME industry Microprocessor Flash memory 5.5 billion transistors 18-core Xeon Haswell-EP 256 billion transistors weighting 0.5 g Hitachi, Ltd. 2014. All rights reserved. 2

Downscaling drives the semiconductor industry The failure of the International Technology Roadmap for Semiconductors after 2013 provides evidence of the end of scaling and also of Moore s law Hitachi, Ltd. 2014. All rights reserved. 3

Is this really the end of more powerful computing? Hitachi, Ltd. 2014. All rights reserved. 4

New computing paradigms: Beyond CMOS Spintronics Devices Quantum computing Single Electron Devices Hitachi, Ltd. 2014. All rights reserved. 5

Gate-based RF readout for QIP Single Electronc Devices

Single-electron devices Coulomb Blockade Hitachi, Ltd. 2014. All rights reserved. 7

Single-electron devices Coulomb Blockade R T V g = C T Conditions R T > 25.6kΩ V d N C g V s E c = e2 C Σ > k B T Hitachi, Ltd. 2014. All rights reserved. 8

Single-electron devices Coulomb Blockade R T V g = C T Conditions R T > 25.6kΩ V d N C g V s E c = e2 C Σ > k B T Energy of the system with N electron Energy difference between N and N-1 electrons Hitachi, Ltd. 2014. All rights reserved. 9

Single-electron devices Coulomb Blockade R T V g = C T Conditions R T > 25.6kΩ V d N C g V s E c = e2 C Σ > k B T SET V g S D Gonzalez-Zalba et al., App. Phys. Lett. 101 103505 (2012) Hitachi, Ltd. 2014. All rights reserved. 10

Single-electron devices Coulomb Blockade R T V g = C T Conditions R T > 25.6kΩ V d N C g V s E c = e2 C Σ > k B T SET V g S D Gonzalez-Zalba et al., App. Phys. Lett. 101 103505 (2012) Hitachi, Ltd. 2014. All rights reserved. 11

Switching Characteristics- Subthreshold Slope MOSFET Single-electron Transistor/ Quantum Dot Transistor (also known as Single-atom transistor) 1 0.1 SET SAT 0.01 I sd /I 0 1E-3 1E-4-10 0 10 SS = l n 10 kt q 1 + C d C OX > 60 mv/dec e V g /kt SS SET = 1. 25 l n 10 kt αq SS SAT = l n 10 kt αq > 75 mv/dec > 60 mv/dec Hitachi, Ltd. 2014. All rights reserved. 12

Functionality beyond CMOS Logic at the device level Reconfigurable binary gates implemented with on a single device NAND->NOR Simplified Logic Circuits 1 Bit Full adder (4 devices vs 28 CMOS) Gonzalez Zalba et al. PLOSONE (2015) Mol et al. PNAS 108 13969 (2011) Hitachi, Ltd. 2014. All rights reserved. 13

Gate-based RF readout for QIP High Frequency Performance ~ N

Motivation Dissipation in single-electron devices High frequency performance Fundamental limits Decoherence in quantum information Unexpected applications High-sensitivity electrometry Primary thermometry Finite Frequency = Gabelli, Science 313 499 (2006) F. Persson, Nano Letters 10, 953 (2010). A.Wallraff, Nature 431, 162 (2004). K. D. Petersson, Nano Letters 10, 2789 (2010). Ciccarelli, New J. Phys 13 093015 (2011) R. J. Schoelkopf, Science 280, 1238 (1998). J. I. Colless, Physical Review Letters 110, 046805 (2013).

High Frequency Performance V g0 +V g rf sin(ω 0 t) ~ C g Hitachi, Ltd. 2014. All rights reserved. 16

High Frequency Performance Naive Model V g0 +V g rf sin(ω 0 t) ~ C g R T /2 2C T Hitachi, Ltd. 2014. All rights reserved. 17

High Frequency Performance Naive Model HighFreq Model V g0 +V g rf sin(ω 0 t) V g0 +V g rf sin(ω 0 t) ~ ~ R T /2 C g 2C T = R Sis C Q C geo R sis = Sisyphus Resistance C Q = Quantum Capacitance Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) Mizuta et al Phys Rev B 95 045414 (2017) Hitachi, Ltd. 2014. All rights reserved. 18

Sisyphus Mechanism Two-level system driven at a rate comparable to the relaxation n g = C gv g0 e Low coupling between states =0, Landau-Zener probability 1 Hitachi, Ltd. 2014. All rights reserved. 19

Sisyphus Process Associated Power dissipation Dynamics described by the rate equation Tunnel Rates (QDT) See -> Ciccarelli, New J. Phys 13 093015 (2011) for SET Excess Power Dissipation - Sisyphus Power and Resistance: Hitachi, Ltd. 2014. All rights reserved. 20

Our Devices Fully-depleted SOI Transistors V sd V tg Gate-based RF reflectometry f r = 2π 1 LC T 200 nm Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) T<20K Betz et al, App. Phys. Lett 104 043106 (2014) Hitachi, Ltd. 2014. All rights reserved. 21

Excess Dissipation Excess power dissipation at the regions of electron instability T=30 mk I SD (na) <P>/P 0 (10-3 ) Cyclic tunnelling of electrons Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) Hitachi, Ltd. 2014. All rights reserved. 22

Bias and Temperature dependence Sisyphus Lineshape E = α(v tg V tg0 ) Sisyphus Linewidth and Height Electron-Phonon Decoupling FWHM = A n T en + T n A = 3.61 ± 0.05 n = 2.98 ± 0.1 Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) Hitachi, Ltd. 2014. All rights reserved. 23

Relaxation rate dependence Excess dissipation as a function of tunnel rates Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) Hitachi, Ltd. 2014. All rights reserved. 24

Relaxation rate dependence Excess dissipation as a function of tunnel rates Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) Hitachi, Ltd. 2014. All rights reserved. 25

Applications High-sensitivity and compact charge sensing μe/ Hz GaAs Gate sensor 6300 rf-qpc 146 This Gate Sensor 37 rf-set 0.5 Gonzalez Zalba et al, Nat. Commun 6 6084 (2015) Hitachi, Ltd. 2014. All rights reserved. 26

Lisa Ibberson Ruben Otxoa James Haigh Aleksey Andreev Franco Nori Sergey Shevchenko Alessandro Rossi Imtiaz Ahmed Andrew Ferguson* Silvano De Franceschi Maud Vinet Romain Wacquez Marc Sanquer Xavier Jehl Sylvain Barraud Louis Hutin John J L Morton Anasua Chatterjee Simon Schaal Matias Urdampilleta* Cheuck Lo*

Conclusions 1. Single-electron devices provide enhanced functionalities 2. Explored energy dissipation in QD transistors at high frequencies: Theoretically and corroborated experimentally 3. Applications for primary thermometry and charge sensing Hitachi, Ltd. 2014. All rights reserved. 28

END Energy dissipation in single-electron devices at high-frequencies 07/07/2017 M Fernando Gonzalez Zalba mg507@cam.ac.uk Hitachi Cambridge Laboratory Hitachi Europe Ltd. Hitachi, Ltd. 2014. All rights reserved. 29

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