Dr JBO Student ID Number: Model Answer Section: 01A / 01B Lecturer: Dr. Jamaludin Bin Omar. Name:

Similar documents
Class AB Output Stage

Bipolar Junction Transistor (BJT) - Introduction

University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS

ESE319 Introduction to Microelectronics. Output Stages

Tutorial #4: Bias Point Analysis in Multisim

Lecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

University of Pittsburgh

Chapter 13 Problem Solutions Computer Simulation Computer Simulation ma/ V 80. r I (120)(0.026)

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions

Lecture 14. Ozgur Aktas. March 20, 2006

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

Lecture 7: Transistors and Amplifiers

General Purpose Transistors

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE

Biasing the CE Amplifier

(e V BC/V T. α F I SE = α R I SC = I S (3)

Semiconductor Device Modeling and Characterization EE5342, Lecture 15 -Sp 2002

B C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted )

ELECTRONICS IA 2017 SCHEME

Lesson 7: Linear Transformations Applied to Cubes

Dual JK Flip-Flop IW4027B TECHNICAL DATA PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE. Rev. 00

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE

Electronics II Physics 3620 / 6620

Microelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises

Advanced Current Mirrors and Opamps

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

AN8814SB. 4-channel driver IC for optical disk drive. ICs for Compact Disc/CD-ROM Player. Overview. Features. Applications.

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005

CLASS 3&4. BJT currents, parameters and circuit configurations

Delhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:

Power and Temperature

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

UNISONIC TECHNOLOGIES CO., LTD U74HC164

COMPLEMENTARY NPN/PNP TRANSISTOR

ECE 2210 Final given: Spring 15 p1

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

absolute maximum ratings at 25 C case temperature (unless otherwise noted)

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

Junction Diodes. Tim Sumner, Imperial College, Rm: 1009, x /18/2006

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

Homework Assignment 08

MATHS (O) NOTES. SUBJECT: Maths LEVEL: Ordinary Level TEACHER: Jean Kelly. The Institute of Education Topics Covered: Complex Numbers

AK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5

p-n junction biasing, p-n I-V characteristics, p-n currents Norlaili Mohd. Noh EEE /09

Transistor Characteristics and A simple BJT Current Mirror

II/IV B.Tech (Regular/Supplementary) DEGREE EXAMINATION. Answer ONE question from each unit.

Circle the one best answer for each question. Five points per question.

Chapter 5 Objectives

IX. TRANSISTOR CIRCUITS

Charge Storage in the MOS Structure. The Inverted MOS Capacitor (V GB > V Tn )

CHAPTER.4: Transistor at low frequencies

Chapter 13 Small-Signal Modeling and Linear Amplification

ECE2210 Final given: Fall 13

6.012 Electronic Devices and Circuits Spring 2005

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

MM74C14 Hex Schmitt Trigger

74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D)

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

MM74C14 Hex Schmitt Trigger

Quad 2-Input Data Selectors/Multiplexer High-Performance Silicon-Gate CMOS

ECE2210 Final given: Spring 08

BCD-TO-DECIMAL DECODER HIGH-VOLTAGE SILICON-GATE CMOS IW4028B TECHNICAL DATA

AN80xx/AN80xxM Series

OP550, OP552, OP555, OP560, OP565, OP750 Series

Mod. Sim. Dyn. Sys. Amplifiers page 1

At point G V = = = = = = RB B B. IN RB f

UNISONIC TECHNOLOGIES CO., LTD

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

UNISONIC TECHNOLOGIES CO., LTD

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

Mod. Sim. Dyn. Sys. Amplifiers page 1

SOME USEFUL NETWORK THEOREMS

Presettable 4-Bit Binary UP/DOWN Counter High-Performance Silicon-Gate CMOS

J. Lazzaro, S. Ryckebusch, M.A. Mahowald, and C. A. Mead California Institute of Technology Pasadena, CA 91125

MM74C90 MM74C93 4-Bit Decade Counter 4-Bit Binary Counter

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer

Hexadecimal and Numeric Indicators. Technical Data

BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors

MOC8111 MOC8112 MOC8113

74HC573; 74HCT573. Octal D-type transparent latch; 3-state. The 74HC573; 74HCT573 is functionally identical to:

MathB65 Ch 4 VII, VIII, IX.notebook. November 06, 2017

Junction Bipolar Transistor. Characteristics Models Datasheet

Chapter 9 Bipolar Junction Transistor

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts

12-Stage Binary Ripple Counter High-Voltage Silicon-Gate CMOS

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

Long Channel MOS Transistors

Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc

LB1846M, 1848M. Low-Voltage/Low Saturation Voltage Type Bidirectional Motor Driver

Switching Regulators MC33063A SOP

74HC573; 74HCT573. Octal D-type transparent latch; 3-state. The 74HC573; 74HCT573 is functionally identical to:

L4970A 10A SWITCHING REGULATOR

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

Transcription:

EEEB273 - Quiz 5 [Question Set 1] Section: 01A / 01B For the class AB output stage in, given that V CC = 12 V and V BB = 1.44 V. R L = 1 k. The reverse-bias saturation current for the transistors, I S = 2.2 x 10-15 A. Assume >> 1. For the output voltage v O = -9.5 V: (i) Determine i L, i Cn, and i Cp. (ii) Find the power dissipated in transistor Q n. v O = -9.5 V = i L R L i L = v O /R L = (-9.5 V) /(1 k) = -9.5 ma [1] V EBP = V T ln(i Cp / I S ) = 26m ln(9.5m / 2.2x10-15 ) = 0.7564 V [1.5] V BEN = V BB - V EBP = 1.44-0.7564 = 0.6838 V [2] i Cn = I S exp(v BEN /V T ) = 2.2x10-15 exp(0.6838/26m) = 575.9 µa [1] Actual value of i Cp = i Cn i L = 575.9µ - (-9.5m) = 10.0759 ma [1] V CEn = +V CC - v O = +12 (-9.5) = 21.5 V [1] P Qn = (575.9 µa)(21.5 V) = 12.38 mw [0.5]

EEEB273 - Quiz 5 [Question Set 1] For the class AB output stage in, given that V CC = 12 V and V BB = 1.42 V. R L = 1 k. The For the output voltage v O = -10.5 V: (iii)determine i L, i Cn, and i Cp. (iv) Find the power dissipated in transistor Q n. v O = -10.5 V = i L R L i L = v O /R L = (-10.5 V) /(1 k) = -10.5 ma [1] V EBP = V T ln(i Cp / I S ) = 26m ln(10.5m / 2.4x10-15 ) = 0.7568 V [1.5] V BEN = V BB - V EBP = 1.42-0.7568 = 0.6632 V [2] i Cn = I S exp(v BEN /V T ) = 2.4x10-15 exp(0.6632/26m) = 287.3 µa [1] Actual value of i Cp = i Cn i L = 287.3µ - (-10.5m) = 10.7873 ma [1] V CEn = +V CC - v O = +12 (-10.5) = 22.5 V [1] P Qn = (283.7 µa)(22.5 V) = 6.47 mw [0.5]

EEEB273 - Quiz 5 [Question Set 2] For the class AB output stage in, given that V CC = 14 V and V BB = 1.46 V. R L = 1 k. The For the output voltage v O = -10 V: (v) Determine i L, i Cn, and i Cp. (vi) Find the power dissipated in transistor Q n. v O = -10 V = i L R L i L = v O /R L = (-10 V) /(1 k) = -10 ma [1] V EBP = V T ln(i Cp / I S ) = 26m ln(10m / 2.4x10-15 ) = 0.7555 V [1.5] V BEN = V BB - V EBP = 1.46-0.7555 = 0.7045 V [2] i Cn = I S exp(v BEN /V T ) = 2.4x10-15 exp(0.7045/26m) = 1405.2 µa [1] Actual value of i Cp = i Cn i L = 1405.2µ - (-10m) = 11.4052 ma [1] V CEn = +V CC - v O = +14 (-10) = 24 V [1] P Qn = (1405.2 µa)(24 V) = 33.72 mw [0.5]

EEEB273 - Quiz 5 [Question Set 3] For the class AB output stage in, given that V CC = 12 V and V BB = 1.4 V. R L = 1 k. The For the output voltage v O = -8.5 V: (vii) Determine i L, i Cn, and i Cp. (viii) Find the power dissipated in transistor Q n. v O = -8.5 V = i L R L i L = v O /R L = (-8.5 V) /(1 k) = -8.5 ma [1] V EBP = V T ln(i Cp / I S ) = 26m ln(8.5m / 2.4x10-15 ) = 0.7513 V [1.5] V BEN = V BB - V EBP = 1.4-0.7513 = 0.6487 V [2] i Cn = I S exp(v BEN /V T ) = 2.4x10-15 exp(0.6487/26m) = 164.5 µa [1] Actual value of i Cp = i Cn i L = 164.5µ - (-8.5m) = 8.6645 ma [1] V CEn = +V CC - v O = +12 (-8.5) = 20.5 V [1] P Qn = (164.5 µa)(20.5 V) = 3.37 mw [0.5]

EEEB273 - Quiz 5 [Question Set 4] For the class AB output stage in, given that V CC = 12.5 V and V BB = 1.48 V. R L = 1 k. The For the output voltage v O = -9.5 V: (ix) Determine i L, i Cn, and i Cp. (x) Find the power dissipated in transistor Q n. v O = -9.5 V = i L R L i L = v O /R L = (-9.5 V) /(1 k) = -9.5 ma [1] V EBP = V T ln(i Cp / I S ) = 26m ln(9.5m / 2.4x10-15 ) = 0.7542 V [1.5] V BEN = V BB - V EBP = 1.48-0.7542 = 0.7258 V [2] i Cn = I S exp(v BEN /V T ) = 2.4x10-15 exp(0.7258/26m) = 3192.1 µa [1] Actual value of i Cp = i Cn i L = 3192.1µ - (-9.5m) = 12.6921 ma [1] V CEn = +V CC - v O = +12.5 (-9.5) = 22 V [1] P Qn = (3192.1 µa)(22 V) = 70.23 mw [0.5]