Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S = 9V I D5 =.5A R DS(on) mω 3ns t rr Symbol Test Conditions Maximum Ratings S = 5 C to 15 C 9 V V DGR = 5 C to 15 C, R GS = 1MΩ 9 V S Continuous ± 3 V M Transient ± V ISOPLUS7 TM E1533 G D S Isolated Tab I D5 = 5 C.5 A I DM = 5 C, Pulse Width Limited by M 3 A I A = 5 C 9 A E AS = 5 C mj dv/dt I S I DM, V DD S, 15 C 15 V/ns P D = 5 C W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD Plastic body for s C V ISOL 5/ Hz, RMS, 1 minute 5 V~ F C Mounting force../.5..7 N/lb. Weight 5 g Symbol Test Conditions Characteristic Values ( = 5 C, unless otherwise specified) Min. Typ. Max. BS = V = 1mA 9 V (th) = = 1mA 3.5.5 V G = Gate D = Drain S = Source Fearures Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface ~ Electrical Isolation Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies Leaser Drivers DC Choppers AC and DC Motor Drives I GSS = ± 3V, = V ± na I DSS = S 5 μa = V = 5 C 1.5 ma R DS(on) = V = 9A, Note 1 mω 11 IXYS CORPORATION, All Rights Reserved DS5A(3/11)
Symbol Test Conditions Characteristic Values ( = 5 C unless otherwise specified) Min. Typ. Max. ISOPLUS7 TM Outline g fs = V = 9A, Note 1 S R Gi Gate input resistance 1. Ω C iss 53 pf C oss = V, =, f = 1MHz 3 pf C rss 53 pf t d(on) Resistive Switching Times ns t r = V, =.5 S = 9A 33 ns t d(off) ns R G = Ω (External) t f ns Q g(on) 97 nc Q gs = V, =.5 S = 9A 3 nc Q gd nc R thjc. C/W R thcs.15 C/W Source-Drain Diode Characteristic Values = 5 C unless otherwise specified) Min. Typ. Max. I S = V A Terminals: 1 - Gate - Drain (Collector) 3 - Source (Emitter) - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A.3 5.1.19.5 A 1.9.5.9. A 1.91..75.5 b 1. 1..5.55 b 1 1.91.13.75. b.9 3..115.3 C.1...31 D. 1.3.19. E 15.75.13..35 e 5.5 BSC.15 BSC L 19.1.3.7. L1 3.1.3.15.17 Q 5.59... R.3.3.17.19 I SM Repetitive, pulse width limited by M 7 A V SD I F = I S, = V, Note 1 1.5 V t rr I F = 9A, -di/dt = A/μs 3 ns Q RM 1. μc V R = V, = V I RM. A Note 1: Pulse test, t 3μs; duty cycle, d %. IXYS Reserves the Right to Rhange Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,59,931, 5,9,91 5,37,1,,5,,5 B1,3,3,77,55 7,5,73 B 7,157,33B by one or moreof the following U.S. patents:,5,7 5,17,5 5,3,37 5,31,5,59,3 B1,53,33,7,5 B,759,9 7,3,975 B,1, 5,3,79 5,7,117 5,,715,3,7 B1,53,55,7,3,771,7 B 7,71,537
Fig. 1. Output Characteristics @ = 5ºC Fig.. Extended Output Characteristics @ = 5ºC = V 3 3 = V 1 3 5 7 9 V V 5 15 5 3 - Volts - Volts Fig. 3. Output Characteristics @ = 5ºC Fig.. R DS(on) Normalized to I D = 9A Value vs. Junction Temperature = V V RDS(on) - Normalized 3... 1. 1. 1. = V I D = A I D = 9A. - Volts. -5-5 5 5 75 5 15 - Degrees Centigrade 3. Fig. 5. R DS(on) Normalized to I D = 9A Value vs. Drain Current Fig.. Maximum Drain Current vs. Case Temperature = V. = 5ºC RDS(on) - Normalized. 1. 1. 1. = 5ºC. 3 3 I D - Amperes -5-5 5 5 75 5 15 - Degrees Centigrade 11 IXYS CORPORATION, All Rights Reserved
Fig. 7. Input Admittance Fig.. Transconductance 3 = - ºC 5ºC = 5ºC 5ºC - ºC g f s - Siemens 5ºC 3.5..5 5. 5.5..5 7. 7.5..5 - Volts 3 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge IS - Amperes 5 3 = 5ºC VGS - Volts 9 7 5 3 = I D = 9A I G = ma = 5ºC 1.3..5..7..9 1. 1.1 V SD - Volts 3 5 7 9 Q G - NanoCoulombs Fig. 11. Capacitance Fig.. Maximum Transient Thermal Impedance, 1 C iss Capacitance - PicoFarads 1, C oss Z(th)JC - ºC / W.1 C rss f = 1 MHz 5 15 5 3 35 - Volts.1.1.1.1.1 1 Pulse Width - Seconds IXYS Reserves the Right to Rhange Limits, Test Conditions, and Dimensions. IXYS REF: F_N9P(7)--
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