High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S = V = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 1 C V V CGR T J = 25 C to 1 C, R GE = 1MΩ V V GES Continuous ± V V GEM Transient ± V G C E C (TAB) 25 = 25 C A I LRMS Terminal Current Limit 75 A = C 42 A TO-268 (IXBT) M = 25 C, 1ms A SSOA V GE = 15V, T VJ = 125 C, R G = Ω M = A (RBSOA) Clamped inductive load S 13 V P C = 25 C 3 W G E C (TAB) T J -55... +1 C T JM 1 C T stg -55... +1 C T L 1.6mm (.62 in.) from case for s C T SOLD Plastic body for seconds 2 C M d Mounting torque (TO-247) 1.13/ Nm/lb.in. Weight TO-247 6 g TO-268 4 g Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) Min. Typ. Max. BS = 2μA, V GE = V V V GE(th) = 2μA, = V GE 2.5 5.5 V ES =.8 S μa V GE = V T J = 125 C 1.5 ma I GES = V, V GE = ± V ± na G = Gate C = Collector E = Emitter TAB = Collector Features High blocking voltage International standard packages Low conduction losses Advantages Low gate drive requirement High power density Applications: Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches (sat) = 15V, Note 1 2.8 V T J = 125 C 2.7 V 8 IXYS CORPORATION, All rights reserved DS987C(/8)
Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) Min. Typ. Max. g fs = 42A, = V, Note 1 24 32 S C ies 39 pf C oes = 25V, V GE = V, f = 1MHz 225 pf C res pf Q g 188 nc Q ge = 15V, =.5 S 29 nc Q gc 76 nc t d(on) 37 ns Resistive Switching times, T J = 25 C t r 139 ns I t C = 15V d(off) 3 ns V t CE = 8V, R G = Ω f 665 ns t d(on) 36 ns t r Resistive Switching times, T J = 125 C 188 ns = 15V 3 ns t f = 8V, R G = Ω 7 ns R thjc.35 C/W R thcs (TO-247).25 C/W TO-247 (IXBH) Outline 1 2 3 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.185.9 A 1 2.2 2.54.87.2 A 2 2.2 2.6.59.98 b 1. 1.4..55 b 1 1.65 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D. 21.46.819.845 E 15.75 16.26.6.6 e 5. 5.72.5.225 L 19.81.32.7. L1 4..177 P 3.55 3.65.1.144 Q 5.89 6..232.252 R 4.32 5.49.1.216 S 6.15 BSC 242 BSC e P Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Reverse Diode TO-268 (IXBT) Outline Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) Min. Typ. Max. V F I F = V 2.8 V t I rr F = 21A, V GE = V, -di F /dt = A/μs 1.32 μs I V RM R = V 36 A Note 1: Pulse test, t μs, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,123 B1 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,881,6 5,34,796 5,187,117 5,486,715 6,6,728 B1 6,583,5 6,7,463 6,771,478 B2 7,71,537
Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 13V 11V 9V 7V 2 2 2 1 1 13V 11V 9V 5V..5 1. 1.5 2. 2.5 3. 3.5 4. - Volts 7V 2 4 6 8 12 14 16 18 - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of (sat) on Junction Temperature 13V 11V 9V 7V 5V VCE(sat) - Normalized 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1..9.8.7 = 84A = 42A = 21A..5 1. 1.5 2. 2.5 3. 3.5 4. - Volts.6 - -25 25 75 125 1 T J - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 1 VCE - Volts 5. 4.5 4. 3.5 3. 2.5 42A = 84A T J = 25ºC 1 T J = - ºC 25ºC 125ºC 2. 1.5 21A 5 6 7 8 9 11 12 13 14 15 V GE - Volts 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. 9.5 V GE - Volts 8 IXYS CORPORATION, All rights reserved IXYS REF: B_42N1(7N)-7-8
g f s - Siemens Fig. 7. Transconductance 55 T J = - ºC 45 25ºC 35 125ºC 25 15 5 1 1 - Amperes IF - Amperes 1 Fig. 8. Forward Voltage Drop of Intrinsic Diode.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. 3.2 V F - Volts T J = 25ºC T J = 125ºC 16 Fig. 9. Gate Charge, Fig.. Capacitance VGE - Volts 14 12 8 6 4 = 8V = 42A I G = ma Capacitance - PicoFarads 1, C ies C oes C res 2 f = 1 MHz 1 1 1 Q G - NanoCoulombs 5 15 25 35 - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1 1. Z(th)JC - ºC / W. T J = 125ºC R G = Ω dv / dt < V / ns.1.1.1.1.1 1 - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 3 3 t r 3 2 2 1 R G = Ω = 8V = 84A = 42A t r 3 2 2 1 R G = Ω = 8V T J = 125ºC T J = 25ºC 25 35 45 55 65 75 85 95 5 115 125 T J - Degrees Centigrade 25 35 45 55 65 75 85 - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 1 3 t r t r t d(on) - - - - T J = 125ºC, = 8V = 84A 1 t d(on) t f t f - - - - R G = Ω, = 8V = 42A 3 3 3 = 42A = 84A 2 15 25 35 45 55 R G - Ohms 2 25 35 45 55 65 75 85 95 5 115 125 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 4 t f 1 t f - - - - R G = Ω, = 8V T J = 25ºC, 125ºC 4 3 3 3 3 2 t f 1 t f - - - - T J = 125ºC, = 8V = 42A = 84A 2 25 35 45 55 65 75 85 - Amperes 2 15 25 35 45 55 R G - Ohms 8 IXYS CORPORATION, All rights reserved IXYS REF: B_42N1(7N)-7-8
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