High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S 11 = 3V = A (sat) 3.2V TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V CGR = 25 C to 15 C, R GE = 1MΩ 3 V V GES Continuous ± V V GEM Transient ± 3 V 25 = 25 C 3 A 11 = 11 C A M = 25 C, 1ms 1 A SSOA V GE =, T VJ = 5 C, R G = 3Ω M = 9 A (RBSOA) Clamped Inductive Load 15 V P C = 25 C W -55... +15 C M 15 C T stg -55... +15 C T L 1.6mm (.62 in.) from Case for 1s 3 C T SOLD Plastic Body for 1 seconds 26 C M d Mounting Torque (TO-7) 1.13/1 Nm/lb.in. Weight TO-26 g TO-7 6 g ( BS = 25μA, V GE = V 3 V V GE(th) = 25μA, = V GE 3. 5. V ES =. S, V GE = V 25 μa = 5 C 1 ma I GES = V, V GE = ± V ±1 na (sat) =, Note 1 2. 3.2 V = 5 C 3.5 V TO-7 (IXBH) Features G C E G = Gate C = Collector E = Emiiter Tab = Collector High Blocking Voltage International Standard Packages Anti-Parallel Diode Low Conduction Losses Advantages Low Gate Drive Requirement High Power Density Applications: G E C (Tab) C (Tab) Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS11A(1/)
( g fs = A, =, Note 1 6.5 1. S C ies 9 pf C oes = 2, V GE = V, f = 1MHz 56 pf C res 19 pf Q g 62 nc Q ge =, = 1V 13 nc Q gc.5 nc t d(on) Resistive Switching Times, T 6 ns J = 25 C t r 1 ns = 1 ns = 5V, R G = 1Ω t f 5 ns TO-26 Outline Terminals: 1 - Gate 3 - Emitter 2, - Collector t d(on) 65 ns Resistive Switching Times, = 5 C t r 395 ns = 175 ns V t CE = 5V, R G = 1Ω f 53 ns R thjc.7 C/W R thcs TO-7.21 C/W TO-7 Outline Reverse Diode ( 1 2 3 P V F I F = V 2.1 V t rr I F = 6A, V GE = V, -di F /dt = 1A/μs 1. μs I RM V R = 1V, V GE = V 21 A e Terminals: 1 - Gate 3 - Emitter 2 - Collector Note 1: Pulse test, t 3μs, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A.7 5.3.15.9 A 1 2.2 2.5.7.12 A 2 2.2 2.6.59.9 b 1. 1...55 b 1 1.65 2.13.65. b 2 2.7 3..113.3 C....31 D. 21.6.19.5 E 15.75.26.61.6 e 5. 5.72.5.225 L 19.1.32.7. L1.5.177 P 3.55 3.65.1.1 Q 5.9 6..232.252 R.32 5.9.17.2 S 6.15 BSC 2 BSC IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered,35,592,931, 5,9,961 5,237,1 6,2,665 6,,65 B1 6,63,3 6,727,55 7,5,73 B2 7,157,33B2 by one or more of the following U.S. patents:,6,72 5,17,5 5,63,37 5,31,25 6,259,3 B1 6,53,33 6,71,5 B2 6,759,692 7,63,975 B2,1,16 5,3,796 5,17,117 5,6,715 6,36,72 B1 6,53,55 6,71,63 6,771,7 B2 7,71,537
Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC V V 1.5 1 1.5 2 2.5 3 3.5 - Volts 5 1 15 25 3 - Volts Fig. 3. Output Characteristics @ = 5ºC V 1. 1.6 V GE = Fig.. Dependence of (sat) on = A VCE(sat) - Normalized 1. 1.2 1. = A = 6A..5 1 1.5 2 2.5 3 3.5.5 - Volts.6-5 -25 25 5 75 1 5 15 - Degrees Centigrade 6. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance VCE - Volts 5.5 5..5. 3.5 3. 2.5 2. = A A 6A = 25ºC 5 7 9 11 13 15 17 19 21 23 25 V GE - Volts 36 32 2 = 5ºC 25ºC - ºC 3.5..5 5. 5.5 6. 6.5 7. 7.5..5 9. V GE - Volts
Fig. 7. Transconductance Fig.. Forward Voltage Drop of Intrinsic Diode 1 36 = - ºC 32 1 2 25ºC g f s - Siemens 1 6 5ºC IF - Amperes = 25ºC = 5ºC 2 5 1 15 25 3 35 5 - Amperes.5 1 1.5 2 2.5 3 V F - Volts Fig. 9. Gate Charge Fig. 1. Capacitance 1, 1 = 1kV = A f = 1 MHz VGE - Volts 1 6 I G = 1mA Capacitance - PicoFarads 1, 1 C ies C oes 2 1 3 5 6 Q G - NanoCoulombs C res 1 5 1 15 25 3 35 - Volts Fig. 11. Reverse-Bias Safe Operating Area 1 Fig.. Maximum Transient Thermal Impedance 1 6 Z(th)JC - ºC / W.1 = 5ºC R G = 3Ω dv / dt < / ns 5 1 15 25 3 - Volts.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
6 Fig. 13. Resistive Turn-on Rise Time vs. 6 Fig. 1. Resistive Turn-on Rise Time vs. Collector Current 5 R G = 1Ω, V GE = = 5V 5 R G = 1Ω, V GE = = 5V 3 = A = A 3 = 5ºC 1 1 = 25ºC 25 35 5 55 65 75 5 95 15 115 5 - Degrees Centigrade 6 1 1 1 22 - Amperes 75 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 15 Fig.. Resistive Turn-off Switching Times vs. 7 65 6 55 5 5 35 3 t r t d(on) - - - - = 5ºC, V GE = = 5V = A, A 1 13 1 11 1 9 7 6 t d(on) t f 7 6 5 3 t f - - - - R G = 1Ω, V GE = = 5V = A = A 19 1 17 15 25 5 1 3 5 6 7 9 1 R G - Ohms 1 25 35 5 55 65 75 5 95 15 115 5 - Degrees Centigrade 1 Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 3 7 Fig. 1. Resistive Turn-off Switching Times vs. Gate Resistance 9 t f 1 1 6 = 5ºC, 25ºC t f - - - - R G = 1Ω, V GE = = 5V 3 26 2 1 1 1 t f 65 6 55 5 5 35 3 t f - - - - = 5ºC, V GE = = 5V = A = A 7 6 5 3 1 6 6 1 1 1 22 - Amperes 25 1 3 5 6 7 9 1 R G - Ohms IXYS REF: B_N3(P)6-5-