Capacitors and PN Junctions. Lecture 8: Prof. Niknejad. Department of EECS University of California, Berkeley. EECS 105 Fall 2003, Lecture 8

Similar documents
Lecture 9: Diffusion, Electrostatics review, and Capacitors. Context

Lecture 10: P-N Diodes. Announcements

EE105 - Fall 2006 Microelectronic Devices and Circuits

Fig. 1: Streamline coordinates

FYS Vår 2016 (Kondenserte fasers fysikk)

Schottky diodes: I-V characteristics

1. pn junction under bias 2. I-Vcharacteristics

Bipolar Junction Transistors

4. The critical magnetic field

Semiconductors a brief introduction

Modulation Doping HEMT/HFET/MODFET

Introduction to Solid State Physics

Basic Physics of Semiconductors

Electrical Resistance

Basic Physics of Semiconductors

TUTORIAL 6. Review of Electrostatic

The aim of the course is to give an introduction to semiconductor device physics. The syllabus for the course is:

Semiconductor Electronic Devices

Two arbitrary semiconductors generally have different electron affinities, bandgaps, and effective DOSs. An arbitrary example is shown below.

Nonequilibrium Excess Carriers in Semiconductors

Solar Photovoltaic Technologies

State space systems analysis

Heterojunctions. Heterojunctions

Semiconductors. PN junction. n- type

Lecture 3. Electron and Hole Transport in Semiconductors

u t u 0 ( 7) Intuitively, the maximum principles can be explained by the following observation. Recall

Overview of Silicon p-n Junctions

EECE 301 Signals & Systems Prof. Mark Fowler

p/n junction Isolated p, n regions: no electric contact, not in equilibrium E vac E i E A E F E V E C E D

Carriers in a semiconductor diffuse in a carrier gradient by random thermal motion and scattering from the lattice and impurities.

2.CMOS Transistor Theory

We will look for series solutions to (1) around (at most) regular singular points, which without

STA 4032 Final Exam Formula Sheet

Lecture 5: HBT DC Properties. Basic operation of a (Heterojunction) Bipolar Transistor

Lecture 2. Dopant Compensation

ECEN620: Network Theory Broadband Circuit Design Fall 2014

Doped semiconductors: donor impurities

5.1 Introduction 5.2 Equilibrium condition Contact potential Equilibrium Fermi level Space charge at a junction 5.

EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of MOSFET. MOS Capacitor. Metal-Oxide-Semiconductor (MOS) Capacitor

Diode in electronic circuits. (+) (-) i D

Introduction to Microelectronics

Basic Concepts of Electricity. n Force on positive charge is in direction of electric field, negative is opposite

Lecture Notes #9: Class #11

a 1 = 1 a a a a n n s f() s = Σ log a 1 + a a n log n sup log a n+1 + a n+2 + a n+3 log n sup () s = an /n s s = + t i

Hidden Markov Model Parameters

SOLUTIONS: ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 3/27/13) e E i E T

Complementi di Fisica Lecture 24

Statistics and Chemical Measurements: Quantifying Uncertainty. Normal or Gaussian Distribution The Bell Curve

Lecture 30: Frequency Response of Second-Order Systems

Mark Lundstrom Spring SOLUTIONS: ECE 305 Homework: Week 5. Mark Lundstrom Purdue University

Metal Gate. Insulator Semiconductor

Castiel, Supernatural, Season 6, Episode 18

THE CONCEPT OF THE ROOT LOCUS. H(s) THE CONCEPT OF THE ROOT LOCUS

Chapter 2 Motion and Recombination of Electrons and Holes

Heat Equation: Maximum Principles

ELEC 372 LECTURE NOTES, WEEK 4 Dr. Amir G. Aghdam Concordia University

Lecture 6. Semiconductor physics IV. The Semiconductor in Equilibrium

MOS electrostatic: Quantitative analysis

ME 410 MECHANICAL ENGINEERING SYSTEMS LABORATORY REGRESSION ANALYSIS

EE3310 Class notes Part 3. Solid State Electronic Devices - EE3310 Class notes Transistors

EULER-MACLAURIN SUM FORMULA AND ITS GENERALIZATIONS AND APPLICATIONS

Lecture 9. NMOS Field Effect Transistor (NMOSFET or NFET)

Photo-Voltaics and Solar Cells. Photo-Voltaic Cells

EE105 Fall 2015 Microelectronic Devices and Circuits. pn Junction

AME 513. " Lecture 3 Chemical thermodynamics I 2 nd Law

Nanomaterials for Photovoltaics (v11) 6. Homojunctions

ECE 442. Spring, Lecture - 4

Math 312 Lecture Notes One Dimensional Maps

Another Look at Estimation for MA(1) Processes With a Unit Root

ECE606: Solid State Devices Lecture 19 Bipolar Transistors Design

Different kinds of Mathematical Induction

REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION

Chapter 2 Motion and Recombination of Electrons and Holes

8.6 Order-Recursive LS s[n]

13.4 Scalar Kalman Filter

ELEG 4603/5173L Digital Signal Processing Ch. 1 Discrete-Time Signals and Systems

ECE606: Solid State Devices Lecture 14 Electrostatics of p-n junctions

Explicit scheme. Fully implicit scheme Notes. Fully implicit scheme Notes. Fully implicit scheme Notes. Notes

SECTION 2 Electrostatics

Chapter 7, Solution 1C.

Comments on Discussion Sheet 18 and Worksheet 18 ( ) An Introduction to Hypothesis Testing

Geodynamics Lecture 11 Brittle deformation and faulting

High-Speed Serial Interface Circuits and Systems. Lect. 4 Phase-Locked Loop (PLL) Type 1 (Chap. 8 in Razavi)

Digital Integrated Circuit Design

Introduction to Control Systems

1 Approximating Integrals using Taylor Polynomials

INTRODUCTORY MATHEMATICAL ANALYSIS

1. Hydrogen Atom: 3p State

Solid State Device Fundamentals

Time-Domain Representations of LTI Systems

Recombination on Locally Processed Wafer Surfaces

1.3 Convergence Theorems of Fourier Series. k k k k. N N k 1. With this in mind, we state (without proof) the convergence of Fourier series.

Sinusoidal stimulus. Sin in Sin at every node! Phasors. We are going to analyze circuits for a single sinusoid at a time which we are going to write:

STRONG DEVIATION THEOREMS FOR THE SEQUENCE OF CONTINUOUS RANDOM VARIABLES AND THE APPROACH OF LAPLACE TRANSFORM

Quiz #3 Practice Problem Set

Analytic Models of Near-Field RF Sheaths

Société de Calcul Mathématique, S. A. Algorithmes et Optimisation

SOLUTION: The 95% confidence interval for the population mean µ is x ± t 0.025; 49

Thermionic Emission Theory

ECE 422 Power System Operations & Planning 6 Small Signal Stability. Spring 2015 Instructor: Kai Sun

Transcription:

CS 15 Fall 23, Lecture 8 Lecture 8: Capacitor ad PN Juctio Prof. Nikejad

Lecture Outlie Review of lectrotatic IC MIM Capacitor No-Liear Capacitor PN Juctio Thermal quilibrium

lectrotatic Review 1 lectric field go from poitive charge to egative charge by covetio +++++++++++++++++++++ lectric field lie diverge o charge ρ I word, if the electric field chage magitude, there ha to be charge ivolved! Reult: I a charge free regio, the electric field mut be cotat!

lectrotatic Review 2 Gau Law equivaletly ay that if there i a et electric field leavig a regio, there ha to be poitive charge i that regio: +++++++++++++++++++++ lectric Field are Leavig Thi Bo! d d Recall: Q / ρ ds Q d ds S Q

lectrotatic i 1D verythig implifie i 1-D d ρ ρ d ρ ' + ' Zero field boudary coditio Coider a uiform charge ditributio ρ ρ 1 ' ' ρ ρ 1 ρ 1

lectrotatic Potetial The electric field force i related to the potetial eergy: d Negative ig ay that field lie go from high potetial poit to lower potetial poit egative lope Note: A electro hould float to a high potetial poit: d F e q e 1 2 d F e e e

More Potetial Itegratig thi baic relatio, we have that the potetial i the itegral of the field: C dl d l I 1D, thi i a imple itegral: ' ' Goig the other way, we have Poio equatio i 1D: d ρ 2 2

Boudary Coditio Potetial mut be a cotiuou fuctio. If ot, the field force would be ifiite lectric field eed ot be cotiuou. We have already ee that the electric field diverge o charge. I fact, acro a iterface we have: 1 1 2 2 S ds 1 1 S + 2 2 S Q iide Q iide S 1 1 S + 2 2 1 2 2 1 Field dicotiuity implie charge deity at urface!

IC MIM Capacitor Bottom Plate Top Plate Bottom Plate Cotact Thi Oide Q C By formig a thi oide ad metal or polyilico plate, a capacitor i formed Cotact are made to top ad bottom plate Paraitic capacitace eit betwee bottom plate ad ubtrate

Review of Capacitor + +++++++++++++++++++++ dl t o Q Q ds A A t o t o ds Q ds Q Q C C A t o For a ideal metal, all charge mut be at urface Gau law: Surface itegral of electric field over cloed urface equal charge iide volume

Capacitor Q- Relatio Q y +++++++++++++++++++++ Qy y Q C Total charge i liearly related to voltage Charge deity i a delta fuctio at urface for perfect metal

A No-Liear Capacitor Q y +++++++++++++++++++++ Qy y Q f We ll oo meet capacitor that have a o-liear Q- relatiohip If plate are ot ideal metal, the charge deity ca peetrate ito urface

What the Capacitace? For a o-liear capacitor, we have Q f C We ca t idetify a capacitace Imagie we apply a mall igal o top of a bia voltage: Q f df + v f + v d Cotat charge The icremetal charge i therefore: Q Q + q f df d + v

Small Sigal Capacitace Break the equatio for total charge ito two term: Q Q + q Icremetal Charge f df d + v Cotat Charge q df d v C v df C d

ample of No-Liear Capacitor Net lecture we ll ee that for a PN juctio, the charge i a fuctio of the revere bia: Q j qn 1 a p b oltage Acro NP Juctio Charge At N Side of Juctio Cotat Small igal capacitace: C j dq d j qn 2 a b p 1 1 b C 1 j b

Carrier Cocetratio ad Potetial I thermal equilibrium, there are o eteral field ad we thu epect the electro ad hole curret deitie to be zero: d d o J q µ + qd µ D o q kt o o d kt q d d o th d

Carrier Cocetratio ad Potetial 2 We have a equatio relatig the potetial to the carrier cocetratio kt q d o th d d If we itegrate the above equatio we have th l We defie the potetial referece to be itriic Si: i

Carrier Cocetratio eru Potetial The carrier cocetratio i thu a fuctio of potetial i e / th Check that for zero potetial, we have itriic carrier cocetratio referece. If we do a imilar calculatio for hole, we arrive at a imilar equatio p i e / th Note that the law of ma actio i upheld th 2 / th / p i e e i 2

The Dopig Chage Potetial Due to the log ature of the potetial, the potetial chage liearly for epoetial icreae i dopig: th l 26m l i i 6m log 6m log 1 1 p 1 26m l1 log 1 1 1 Quick calculatio aid: For a p-type cocetratio of 1 16 cm -3, the potetial i -36 m N-type material have a poitive potetial with repect to itriic Si

PN Juctio: Overview The mot importat device i a juctio betwee a p-type regio ad a -type regio Whe the juctio i firt formed, due to the cocetratio gradiet, mobile charge trafer ear juctio p-type N A lectro leave -type regio ad hole leave p-type regio Thee mobile carrier become miority carrier i ew regio ca t peetrate far due to recombiatio + + + + + + + + + + + + + + + + Due to charge trafer, a voltage differece occur betwee regio Thi create a field at the juctio that caue drift curret to oppoe the diffuio curret N D -type I thermal equilibrium, drift curret ad diffuio mut balace

PN Juctio Curret Coider the PN juctio i thermal equilibrium Agai, the curret have to be zero, o we have d o J q µ + qd d o q µ qd D D p d µ dp µ p o o kt q kt q 1 1 p d dp

PN Juctio Field p-type -type N A N D p N a p J diff p i N 2 d p N d i N 2 a J diff + + Traitio Regio

Total Charge i Traitio Regio To olve for the electric field, we eed to write dow the charge deity i the traitio regio: ρ q p + N d N a I the p-ide of the juctio, there are very few electro ad oly acceptor: ρ q p N a p < < Sice the hole cocetratio i decreaig o the p- ide, the et charge i egative: N a > p ρ <

Charge o N-Side Aalogou to the p-ide, the charge o the -ide i give by: ρ q + N d < < The et charge here i poitive ice: N d > ρ > N d i N 2 diff a J + + Traitio Regio