ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-0AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 390A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-0AB (A-PUK) Major Ratings and Characteristics Parameters ST223C..C Units I T(AV) 390 A @ T hs 55 C I T(RMS) 745 A @ T hs 25 C I TSM @ Hz 58 A @ Hz 630 A I 2 t @ Hz 7 KA2 s @ Hz 56 KA 2 s V DRM /V RRM 0 to 0 V t q range 0 to 30 µs T - to 25 C
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak voltage @ T V V ma 04 0 0 ST223C..C 08 0 900 Current Carrying Capability Frequency I TM I TM I TM Units o el o el 00µs Hz 930 0 430 2 5870 52 0Hz 90 770 490 300 3 27 000Hz 7 6 430 2 8 6 A 20Hz 490 0 070 9 000 8 Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt - - - - A/µs Heatsink temperature 55 55 55 C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction I T(AV) Max. average on-state current 390 () A conduction, half sine wave @ Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current 745 DC @ 25 C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 58 t = 0ms No voltage non-repetitive surge current 630 A t = 8.3ms reapplied 49 t = 0ms 00% V RRM 5 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 7 t = 0ms No voltage Initial T max 56 t = 8.3ms reapplied 2 KA 2 s t = 0ms 00% V RRM 0 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 70 KA 2 s t = 0. to 0ms, no voltage reapplied 2
On-state Conduction V TM Max. peak on-state voltage.58 I TM = 0A, T max, t p = 0ms sine wave pulse V T(TO) Low level value of threshold voltage V T(TO)2 High level value of threshold voltage.05.09 V (6.7% x π x I T(AV) < I < π x I T(AV) ), T (I > π x I T(AV) ), T r t Low level value of forward 0.88 slope resistance mω (6.7% x π x I T(AV) < I < π x I T(AV) ), T r High level value of forward t2 slope resistance 0.82 (I > π x I T(AV) ), T I H Maximum holding current 0 T = 25 C, I T > 30A ma I L Typical latching current 000 T = 25 C, V A = 2V, Ra = 6Ω, I G = A Switching di/dt Max. non-repetitive rate of rise T max, V DRM = rated V 000 A/µs DRM of turned-on current I TM = 2 x di/dt T = 25 C, V DM = rated V DRM, I TM = A DC, t p = µs t Typical delay time 0.78 d Resistive load, Gate pulse: 0V, 5Ω source µs Min Max T max, I TM = 300A, commutating di/dt = A/µs t q Max. turn-off time 0 30 V R = V, t p = 0µs, dv/dt: see table in device code Blocking dv/dt Maximum critical rate of rise of T linear to % V DRM, higher value 0 V/µs off-state voltage available on request I RRM Max. peak reverse and off-state ma T I DRM leakage current max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power P G(AV) Maximum average gate power 0 W T max, f = Hz, d% = I GM Max. peak positive gate current 0 A T max, t p 5ms +V GM Maximum peak positive gate voltage -V GM V T max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD 0 Max. DC gate current not to trigger ma ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T = 25 C, V A = 2V, Ra = 6Ω T max, rated V DRM applied 3
Thermal and Mechanical Specification T Max. operating temperature range - to 25 T stg Max. storage temperature range - to C R th-hs Max. thermal resistance, 0.7 DC operation single side cooled K/W junction to heatsink 0.08 DC operation double side cooled R thc-hs Max. thermal resistance, 0.033 K/W DC operation single side cooled case to heatsink 0.07 DC operation double side cooled F Mounting force, ± 0% 4900 N (0) (Kg) wt Approximate weight g Case style TO - 0AB (A-PUK) See Outline Table R th-hs Conduction (The following table shows the increment of thermal resistence R th-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 0.05 0.07 0.0 0.0 0.09 0.09 0.09 0.09 0.024 0.024 0.026 0.026 K/W T 0.035 0.035 0.036 0.037 30 0.0 0.0 0.0 0.06 Ordering Information Table Device Code ST 22 3 C 08 C H K 2 3 4 5 6 7 8 9 0 - Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 00 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-0AB (A-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 -t q code 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 0 - Critical dv/dt: None = 0V/µsec (Standard value) L = 000V/µsec (Special selection) dv/dt - t q combinations available dv/dt (V/µs) 00 0 0 0 CN DN EN FN * -- 2 CM DM EM FM -- t q (µs) 5 CL DL EL FL * HL 8 CP DP EP FP HP CK DK EK FK HK 25 -- -- -- -- H 30 -- -- -- -- HH *Standard part number. All other types available only on request. 4
Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.2 (0.28) MIN. 9 (0.75) DIA. MAX. 0.3 (0.0) MIN. 0.3 (0.0) MIN. 3.7 / 4.4 (0.54 / 0.57) 9 (0.75) DIA. MAX. 38 (.) DIA MAX. GATE TERM. FOR.47 (0.06) DIA. PIN RECEPTACLE 2 HOLES 3.56 (0.4) x.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.9) 25 ± 5 Case Style TO-0AB (A-PUK) All dimensions in millimeters (inches) 42 (.65) MAX. 28 (.0) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) M axim um Allowable Heatsink Tem perature ( C ) 30 (Single Side Cooled) 0 R (D C) = 0.7 K/W th-hs 00 90 Conduction Angle 70 30 30 0 00 0 2 300 Average On-state Current (A) M axim um Allowable Heatsink Temperature ( C) 30 (Single Side C ooled) 0 R (D C) = 0.7 K/W th-hs 00 90 Conduction Period 70 30 30 DC 0 00 0 2 300 3 0 4 A verag e O n-state C urren t (A) Fig. - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5
M aximum Allow able Heatsink Tem perature ( C ) 30 (D ouble Side C ooled) 0 R th -hs(d C ) = 0.08 K/W 00 90 Conduction Angle 70 30 30 0 00 0 300 0 0 Average On-state Current (A) Maximum Allowable Heatsink Temperature ( C) 30 ST 223C..C Series (Double Side C ooled) 0 R th-hs (D C ) = 0.08 K/W 00 90 Conduction Period 70 30 30 DC 0 00 0 300 0 0 0 700 0 A ve rag e O n -state Curre nt (A ) Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 000 0 0 0 30 RMS Limit Conduction Angle 0 T = 25 C 0 0 00 0 300 0 0 Average On-state Current (A) Fig. 5 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 0 0 000 0 0 0 DC 30 RMS Limit Conduction Period 0 T = 25 C 0 0 00 0 300 0 0 0 700 0 Average On-state Current (A) Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 50 00 00 30 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T = 25 C @ Hz 0.0083 s @ Hz 0.000 s 20 0 00 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 00 50 00 00 30 20 M axim um N on Re petitive Surg e Curre nt V ersus Pulse Train D uration. Co ntro l Of Conduction May Not Be Maintained. Initia l T = 25 C No Voltag e Reapplied Rate d V RRM Re applied 00 0.0 0. P ulse Tra in D ura tio n ( s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6
In st anta neous On-state Current (A) 0000 000 T = 25 C T = 25 C 00 0 2 4 6 8 0 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transie nt Th erm al Im pe danc e Z th-hs (K/W ) 0. 0.0 Steady State Value R th-h s = 0.7 K/ W ( S in g le Sid e C o o le d ) R th-hs = 0.08 K/ W (Double Side Cooled) (DC Operation) 0.00 0.00 0.0 0. 0 Square W ave Pulse D uration (s) Fig. 0 - Thermal Impedance Z th-hs Characteristics Maxim um Reverse Recovery Charge - Qrr (µc) 2 0 00 T = 25 C I TM = 0 A 300 A 0 A 00 A A 0 0 00 Rate Of Fall Of O n-state C urren t - di/dt (A/µs) M axim um Reve rse Rec ove ry C urrent - Irr (A) 00 I TM = 0 A 300 A 0 A 00 A A T = 25 C 0 0 00 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. - Reverse Recovered Charge Characteristics Fig. 2 - Reverse Recovery Current Characteristics Pea k On-state C urrent (A) E4 E3 0 20 00 0000 000 0 0 R s = 47 ohms C s = 0.22 µ F V D = % V DRM 0 00 Hz Sinusoidal pulse T = C C 0 20 00 0000 000 0 0 V D = % V DRM 0 00 Hz Sinusoidal pulse T = 55 C C E2 E E2 E3 E4 E4E E E2 E3 E4 Fig. 3 - Frequency Characteristics 7
Pe ak O n -state C urre nt (A ) E4 V D = % V DRM V D = % V DRM 0 00 Hz E3 0 0 00 Hz 0 000 0 0 20 000 0 0 20 00 00 E2 0000 0000 Trapezoidal pulse T C = 55 C Trapezoidal pulse T = C di/dt = A/µs C di/dt = A/µs E E E2 E3 E4 E4E E E2 E3 E4 Fig. 4 - Frequency Characteristics Peak O n-state C urre nt (A ) E4 E3 E2 V D = % V DRM 000 0 20 00 0000 00 0 0 0 Hz Trapezoidal pulse T C = C di/d t = 00A/µs V D = % V DRM 0 20 00 0000 000 0 0 0 00 Hz Trap ezo id al p ulse T C = 55 C di/dt = 00A/µs E E E2 E 3 E4 E4E E E2 E3 E4 Fig. 5 - Frequency Characteristics Peak On -state C urrent (A) E5 E4 E3 E2 0.5 0.3 0.2 0. ST223C..C Se ries Sinuso id al p ulse 2 4 joules per pulse 0 Rectangular pulse di/dt = A/µs 0.5 0.3 0.2 0. jo ules p er pulse 0 5 2 E E E2 E3 E4 E4E E E2 E3 E4 Pulse Basew idth (µs) Fig. 6 - Maximum On-state Energy Power Loss Characteristics 8
Instantaneo us Gate V oltage (V ) 00 0 Rectangular gate pulse a ) R e c o m m e n d e d lo a d lin e fo r rated di/dt : V, 0ohms; tr<= µs b ) Re c o m m e n d e d lo a d lin e f o r <=30% rated di/dt : 0V, 0ohms tr<= µs VGD Tj=25 C (b) Tj=25 C IG D Device: Frequen cy Limited by PG(AV ) 0. 0.00 0.0 0. 0 00 Tj=- C (a) Instantaneous G ate C urrent (A) () PGM = 0W, = m s (2) PGM = W, = 0m s (3) PGM = W, = 5m s (4) PGM = W, = 3.3ms () (2) (3 ) (4) Fig. 7 - Gate Characteristics 9