XPT TM 6V IGBTs GenX3 TM Extreme Light Punch Through IGBT for -3kHz Switching Preliminary Technical Information S = 6V = A (sat).7v t fi(typ) = ns TO-6 (IXXK) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 6 V V CGR = 5 C to 75 C, R GE = MΩ 6 V V GES Continuous ± V V GEM Transient ±3 V 5 = 5 C (Chip Capability) 38 A I LRMS Leads Current Limit 6 A = C A M = 5 C, ms 9 A I A = 5 C A E AS = 5 C J SSOA V GE = 5V, T VJ = C, R G = Ω M = A (RBSOA) Clamped Inductive Load @ S t sc V GE = 5V, = 36V, = C μs (SCSOA) R G = Ω, Non Repetitive P C = 5 C 63 W -55... +75 C M 75 C T stg -55... +75 C T L Maximum Lead Temperature for Soldering C T SOLD.6 mm (.6in.) from Case for s 6 C M d Mounting Torque (TO-6).3/ Nm/lb.in. F C Mounting Force (PLUS7).. /.5..7 N/lb. Weight TO-6 g PLUS7 6 g Symbol Test Conditions Characteristic Values ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = μa, V GE = V 6 V V GE(th) = μa, = V GE 6. V ES = S, V = V μa GE = C 3 ma I GES = V, V GE = ±V ± na (sat) = A, V GE = 5V, Note..7 V = C 8 V G C E PLUS7 (IXXX) G G C E Tab Tab G = Gate E = Emitter C = Collector Tab = Collector Features International Standard Packages Optimized for -3kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 3 IXYS CORPORATION, All Rights Reserved DS37A(/3)
Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. g fs = 6A, = V, Note 7 5 S C ies 997 pf C oes = 5V, V GE = V, f = MHz 57 pf C res 83 pf Q g(on) 35 nc Q ge = A, V GE = 5V, =.5 S 98 nc Q gc 3 nc 8 ns t ri Inductive load, = 5 C ns = A, V GE = 5V.85 mj = 36V, R G = Ω 6 ns t fi Note ns E off.9. mj 6 ns t ri Inductive load, = C 9 ns = A, V GE = 5V. mj = 36V, R G = Ω 8 ns t fi Note 5 ns E off 3.5 mj R thjc.9 C/W R thcs.5 C/W TO-6 Outline Terminals: = Gate, = Collector 3 = Emitter PLUS7 TM Outline Notes:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. Terminals: - Gate - Collector 3 - Emitter PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Dim. Millimeter Inches Min. Max. Min. Max. A.83 5..9.5 A.9.9. A.9.6.75.85 b...5.55 b.9.3.75.8 b.9 3..5.3 C.6.8..3 D.8.3.89.8 E 5.75 6.3.6.635 e 5.5 BSC.5 BSC L 9.8.3.78.8 L 3.8.3..7 Q 5.59 6... R.3.83.7.9 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,835,59,93,8 5,9,96 5,37,8 6,6,665 6,,65 B 6,683,3 6,77,585 7,5,73 B 7,57,338B by one or more of the following U.S. patents:,86,7 5,7,8 5,63,37 5,38,5 6,59,3 B 6,53,33 6,7,5 B 6,759,69 7,63,975 B,88,6 5,3,796 5,87,7 5,86,75 6,36,78 B 6,583,5 6,7,63 6,77,78 B 7,7,537
Fig.. Output Characteristics @ = 5ºC Fig.. Extended Output Characteristics @ = 5ºC 3V V 3 3V V V V V V 9V 9V 8V 6V...6.8...6.8.. - Volts 8V 7V 6 8 - Volts Fig. 3. Output Characteristics @ = ºC 3V V V V 9V VCE(sat) - Normalized..3... Fig.. Dependence of (sat) on = A = A 7V 5V..8..6..8 - Volts 8V.9 = A.8.7 - -5 5 75 5 75 - Degrees Centigrade 6. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 = 5ºC 8 5. 6.5 VCE - Volts. 3. = A 8 = ºC 5ºC - ºC. A A 6. 8 9 3 5 V GE - Volts 5 6 7 8 9 V GE - Volts 3 IXYS CORPORATION, All Rights Reserved
Fig. 7. Transconductance Fig. 8. Gate Charge 6 9 8 = - ºC, 5ºC, ºC = V = A I G = ma g f s - Siemens 7 6 VGE - Volts 8 6 3 6 8 6 8 - Amperes 8 6 8 3 Q G - NanoCoulombs, Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area f = MHz Capacitance - PicoFarads, C ies, C oes C res 5 5 5 3 35 - Volts = ºC R G = Ω dv / dt < V / ns 6 - Volts (sat) Limit Fig.. Forward-Bias Safe Operating Area. Fig.. Maximum Transient Thermal Impedance 5µs ID - Amperes External Lead Limit = 75ºC = 5ºC Single Pulse µs ms ms DC Z(th)JC - ºC / W......... V DS - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Eoff - MilliJoules 5..5. 3. Fig. 3. Inductive Switching Energy Loss vs. Gate Resistance E off - - - - = ºC, = 36V = A 7 6 5 3 - MilliJoules Eoff - MilliJoules. 3. Fig.. Inductive Switching Energy Loss vs. Collector Current E off - - - - R G = Ω, = 36V = ºC = 5ºC 5 3 - MilliJoules. = A. 3 5 6 7 8 9 R G - Ohms 55 6 65 7 75 8 85 9 95 - Amperes. Fig. 5. Inductive Switching Energy Loss vs. E off - - - - R G = Ω, = 36V 5 36 3 Fig. 6. Inductive Turn-off Switching Times vs. Gate Resistance t f i - - - - = ºC, = 36V 6 Eoff - MilliJoules 3.. = A = A 3 - MilliJoules t f i 8 = A = A 5 75 5 - Degrees Centigrade 6 3 5 6 7 8 9 R G - Ohms 38 Fig. 7. Inductive Turn-off Switching Times vs. Collector Current 8 Fig. 8. Inductive Turn-off Switching Times vs. 8 t f i 3 6 8 = 5ºC = ºC t f i - - - - R G = Ω, = 36V 6 8 6 t f i 3 t f i - - - - R G = Ω, = 36V = A = A 6 8 6 6 55 6 65 7 75 8 85 9 95 - Amperes 5 75 5 - Degrees Centigrade 3 IXYS CORPORATION, All Rights Reserved
8 6 Fig. 9. Inductive Turn-on Switching Times vs. Gate Resistance t r i - - - - = ºC, = 36V 5 5 95 Fig.. Inductive Turn-on Switching Times vs. Collector Current t r i - - - - R G = Ω, = 36V 8 t r i 8 6 = A = A 85 75 65 55 t r i 8 6 = 5ºC = ºC 6 5 35 3 5 6 7 8 9 R G - Ohms 38 55 6 65 7 75 8 85 9 95 - Amperes Fig.. Inductive Turn-on Switching Times vs. 5 t r i 3 9 7 = A t r i - - - - R G = Ω, = 36V 8 6 = A 3 38 5 75 5 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_N6B3(9)8-8-
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