IGBT with Diode V CS = V Short Circuit SOA Capability = 1 A V C(sat) =. V = 1 ns t fi C Preliminary Data Sheet G Symbol Test Conditions Maximum Ratings V CS = C to C V V CGR = C to C; R G = 1 MΩ A V GS Continuous ± V V GM Transient ± V = C (Silicon chip capability) 1 A I L Lead current limit (RMS) A = C A M = C, 1 ms A SSOA V G = 1 V, = 1 C, R G = Ω M = 1 A (RBSOA) Clamped inductive load @. V CS t SC V G = 1 V, V C = V, = 1 C µs (SCSOA) R G = Ω, non repetitive P C = C W V ISOL / Hz t = 1 min V~ I ISOL 1 ma t = 1 s V~ -... + C M C T stg -... + C M d Mounting torque./ Nm/lb.in. Weight g Symbol Test Conditions Characteristic Values ( = C, unless otherwise specified) min. typ. max. BV CS = µa, V G = V V V G(th) = ma, V C = V G V S V C = V CS = C µa V G = V = 1 C ma I GS V C = V, V G = ± V ± na V C(sat) =, V G = 1 V; Note 1. V minibloc, SOT-7 B 1 G = mitter, G = Gate, Features International standard package Aluminium-nitride isolation - high power dissipation Isolation voltage V~ UL registered 1 Low V C(sat) - for minimum on-state conduction losses Fast Recovery pitaxial Diode - short t rr and I RM Low collector-to-case capacitance (< pf) - reduced RFI Low package inductance (< nh) - easy to drive and to protect Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings asy to mount with screws High power density C C = Collector = mitter ither mitter terminal can be used as Main or Kelvin mitter IXYS reserves the right to change limits, test conditions and dimensions. IXYS All rights reserved DSA(/)
Symbol Test Conditions Characteristic Values ( = C, unless otherwise specified) min. typ. max. minibloc, SOT-7 B g fs = A; V C = V, S Note1 C ies pf C oes V C = V, V G = V, f = 1 MHz 7 pf C res 1 pf Q g nc Q ge =, V G = 1 V, V C =. V CS 7 nc Q gc nc t d(on) Inductive load, = C ns t =, V G = 1 V, L = µh, ri ns V C =. V CS, R G =.7 Ω 1 ns t fi Note 1 ns off 1.. mj t d(on) Inductive load, = 1 C ns t ri =, V G = 1 V, L = µh ns on V C =. V CS, R G =.7 Ω. mj 1 ns Note t fi 1 ns off. mj R thjc. K/W R thck. K/W M screws (x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 1. 1. 1. 1. B 7...7. C...11.1 D...11.1...11.1 F 1.1 1.11.7. G.1. 1.1 1.1 H.. 1. 1. J 11. 1...1 K...1.7 L.7... M 1. 1... N.1.. 1.1 O 1..1.7. P..7.1. Q.. 1. 1. R...1.17 S.7..1.11 T..7..7 U -..1 -.. Reverse Diode (FRD) Characteristic Values ( = C, unless otherwise specified) Symbol Test Conditions typ. max. V F = A, Note 1. V = C 1. V I RM =, V G = V, -di F = A/µs. A = V, t rr = 1 A, -di = A/µs, = V ns R thjc. K/W Note: 1. Pulse test, t µs, duty cycle d % Note:. Remarks: Switching times may increase for V C (Clamp) >. V CS, higher or increased R G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFTs and IGBTs are covered by one or more,,7,1,,,7,,7,7,1,1,,,b1,1,,,,, of the following U.S. patents:,,,1,,17,,,1,17,117,,71,,7b1,,1b1,,7b1,,
Fig. 1. Output Characteristics @ Deg. C Fig.. xtended Output Characteristics @ deg. C 7 V G = 17V 1V 1V 11V 7 V G = 17V 1V 1V V 1 1 11V V 7V 7V... 1. 1. 1..1..7 V C 1 7 V C Fig.. Output Characteristics @ 1 Deg. C Fig.. Dependence of V C(sat) on Temperature 7 V G = 17V 1V 1V 11V V 7V V C (sat) - Normalized 1. 1. 1. 1. 1. 1.1 1... V G = 1V = 1A = A = A... 1. 1. 1..1..7 V C.7 - - 7 1 - Degrees Centigrade Fig.. Collector-to-m itter Voltage vs. Gate-to-m iiter voltage Fig.. Input Adm ittance = ºC V C 7 = 1A A A 1 1 = 1ºC ºC -ºC 7 11 1 1 1 1 1 17 V G 7 11 1 1 V G IXYS All rights reserved
Fig. 7. Transconductance Fig.. Dependence of Turn-off nergy Loss on R G g f s - Siemens 7 = -ºC ºC 1ºC off - millijoules 1 1 = 1ºC V G = 1V V C = V = 1A = A 1 1 = A 1 1 1 R G - Ohms off - MilliJoules 11 7 Fig.. Dependence of Turn-Off nergy Loss on R G =.7Ω R G = Ω - - - - V G = 1V V C = V = 1ºC = ºC off - millijoules 11 7 Fig.. Dependence of Turn-off nergy Loss on Temperature R G =.7Ω R G = Ω - - - - V G = 1V V C = V = 1A = A 1 1 1 1 1 = A 7 11 1 - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Time on R G 7 Fig. 1. Dependence of Turn-off Sw itching Time on Switching Time - nanoseconds 7 = A = A 17 1 t fi - - - - - - = 1ºC V G = 1V V C = V = 1A Switching Time - nanoseconds 17 1 t fi - - - - - - R G =.7Ω V G = 1V V C = V = ºC = 1ºC 7 1 1 1 1 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFTs and IGBTs are covered by one or more,,7,1,,,7,,7,7,1,1,,,b1,1,,,,, of the following U.S. patents:,,,1,,17,,,1,17,117,,71,,7b1,,1b1,,7b1,, 7 1 1 1
Fig. 1. Dependence of Turn-off Sw itching Tim e on Temperature Fig. 1. Gate Charge Switching Time - nanoseconds 7 17 1 t fi - - - - - - R G =.7Ω V G = 1V V C = V = A = 1A = A = 1A V G 1 1 V C = V = A I G = ma 7 7 11 1 - Degrees Centigrade 1 1 1 1 Q G - nanocoulombs Fig. 1. Capacitance f = 1 MHz C ies Capacitance - p F C oes C res 1 V C 1. Fig. 1. Maximum Transient Thermal Resistance R (th) J C - (ºC/W).1. 1 Pulse Width - milliseconds IXYS All rights reserved
1 A 1 nc = V A = V 1 = C = C = C Q r =1A = A = A I RM =1A = A = A 1 V A/µs A/µs V F -di F -di F Fig. 17. Forward current versus V F Fig. 1. Reverse recovery charge Q r versus -di F Fig. 1. Peak reverse current I RM versus -di F K f. 1. 1. t rr 1 ns 1 1 1 =1A = A = A = V V FR V 1 t fr V FR 1. µs 1.. t fr. I RM Q r. 1 C 1 A/µs -di F. = A. A/µs di F Fig.. Dynamic parameters Q r, I RM Fig. 1. Recovery time t rr versus -di F Fig.. Peak forward voltage V FR and versus t fr versus di F 1 K/W.1 Z thjc.1 Constants for Z thjc calculation: i R thi (K/W) t i (s) 1.7....7.7...1 DSP x1-a.1.1.1.1.1.1 s 1 t Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFTs and IGBTs are covered by one or more,,7,1,,,7,,7,7,1,1,,,b1,1,,,,, of the following U.S. patents:,,,1,,17,,,1,17,117,,71,,7b1,,1b1,,7b1,,