List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3~4 Switching time equivalent test circuits... Rating and characteristic curves... 4 5~10 Pinning infrmatin... 11 Marking... Suggested slder pad layut... 11 11 Packing infrmatin... 12 Reel packing... 13 Suggested thermal prfiles fr sldering prcesses... 13 High reliability test capabilities... 14 Page 1
Dual General Purpse Transistrs NPN/PNP Silicn Package utline Features High cllectr-emitterbreakdien vltage (BCEO ± 40 MIN.@I C= ± 1mA) Small lad switch transistr with high gain and lw Saturatin vltage, is designed fr general purpse amflifier and switching applicatins at cllectr current Offer NPN+PNP in ne package Capable f 150mW pwer dissipatin Lead-free parts meet RHS requirments Suffix "-H" indicates Halgen free part, ex. -H.053(1.35).045(1.15).012(0.30).004(0).087(2.20).070(1.80) SOT-363.087(2.20).079(2.00).026(0.65)Typ..010(0.25).003(0.08) Mechanical data Epxy:UL94-0 rated flame retardant Case : Mlded plastic, SOT-363 Terminals : Slder plated, slderable per MIL-STD-750, Methd 2026 Plarity : See Diagram Munting Psitin : Any Weight : Apprximated 0.006 gram.004(0) Max..043(1.10).031(0.80) Dimensins in inches and (millimeters) Maximum ratings (AT T A=25 C unless therwise nted) PARAMETER Cllectr-base vltage Cllectr-emitter vltage Emitter-base vltage Cllectr current -cntinuus Ttal device dissipatin (1) Thermal resistance Operating junctin temperature range Strage temperature range NPN PNP NPN PNP NPN PNP NPN PNP T A = 25 C CONDITIONS Symbl CBO CEO EBO IC PD TJ TSTG MIN. -55-55 TYP. MAX. 60-40 40-40 6.0-5.0 200-200 Junctin t ambient RθJA 833 1.Device munted n FR-4 glass epxy printed circuit bard using the minimum recmmended ftprint 150 +150 +150 UNIT ma mw C/W C C Page 2
Electrical characteristics (AT T A=25 C unless therwise nted) Off characteristics PARAMETER (NPN) CONDITIONS (NPN) Symbl MIN. TYP. MAX. UNIT Cllectr-base breakdwn vltage I C = 10μA, I E = 0 (BR)CBO 60 Cllectr-emitter breakdwn vltage(3) I C = 1mA, I B = 0 (BR)CEO 40 Emitter-base breakdwn vltage Base cutff current Cllectr cutff current I E= 10μA, I C = 0 CE = 30, EB = 3.0 CE = 30, EB = 3.0 (BR)EBO IBL ICEX 6.0 50 50 na PARAMETER (PNP) CONDITIONS (PNP) Symbl MIN. TYP. MAX. UNIT Cllectr-base breakdwn vltage I C= -10μA, I E = 0 (BR)CBO -40 Cllectr-emitter breakdwn vltage(3) I C= -1mA, I B = 0 (BR)CEO -40 Emitter-base breakdwn vltage Base cutff current Cllectr cutff current I E = -10μA, I C = 0 CE = -30, EB = -3.0 CE = -30dc, EB = -3.0dc (BR)EBO IBL ICEX -5.0-50 -50 na On characteristics(2) PARAMETER (NPN) CONDITIONS (NPN) Symbl MIN. TYP. MAX. UNIT DC current gain I C = ma, CE= 1.0 I C = 1.0mA, CE = 1.0 40 70 I C = 10mA, CE = 1.0 hfe 100 300 I C = 50mA, CE = 1.0 60 I C= 100mA, CE = 1.0 30 Cllectr-emitter saturatin vltage(2) I C = 10mA, I B = 1.0mA I C = 50mA, I B = 5.0mA CE(sat) 0.2 0.3 Base-emitter saturatin vltage(2) I C = 10mA, I B = 1.0mA I C = 50mA, I B = 5.0mA BE(sat) 0.65 0.85 0.95 PARAMETER (PNP) CONDITIONS (PNP) Symbl MIN. TYP. MAX. UNIT DC current gain I C = -ma, CE = -1.0 I C = -1.0mA, CE = -1.0 60 80 I C = -10mA, CE = -1.0 hfe 100 300 I C = -50mA, CE = -1.0 60 I C = -100mA, CE = -1.0 30 Cllectr-emitter saturatin vltage(2) Base-emitter saturatin vltage(2) I C = -10mA, I B = -1.0mA I C = -50mA, I B = -5.0mA I C = -10mA, I B = -1.0mA I C = -50mA, I B = -5.0mA CE(sat) BE(sat) -0.65-0.25-0.40-0.85-0.95 2.Pulse test : pulse width 300μs, duty cycle 2.0% Page 3
Electrical characteristics (AT T A=25 C unless therwise nted) Small-signal characteristics PARAMETER (NPN) CONDITIONS (NPN) Symbl MIN. TYP. MAX. UNIT Current-gain-bandwidth prduct(3) I C = 10mA, CE = 20, f = 100MHz ft 300 MHz Output capacitance Input capacitance CB = 5.0, I E = 0, f = 1.0MHz EB = 0.5, I C = 0, f = 1.0MHz Cb Cib 4.0 8.0 pf pf Input impedance CE = 10, I C = 1.0mA, f = 1.0KHz hie 1.0 10 kω ltage feedback radi CE = 10, I C = 1.0mA, f = 1.0KHz hre 0.5 8.0 X 10-4 Small-signal current gain CE = 10, I C = 1.0mA, f = 1.0KHz hfe 100 400 - Output admittance CE = 10, I C = 1.0mA, f = 1.0KHz he 1.0 40 μmhs Nise figure CE = 5.0, I C = 100μA, RS = 1.0K Ω, f = 1.0KHz NF 5.0 db Input capacitance Output admittance PARAMETER (PNP) Current-gain-bandwidth prduct(3) Output capacitance Input impedance ltage feedback radi Small-signal current gain Nise figure I C = -10mA, CE = -20, f = 100MHz CB = -5.0, I E = 0, f = 1.0MHz EB = -0.5, I C = 0, f = 1.0MHz CE = -10, I C = -1.0mA, f = 1.0KHz CE = -10, I C = -1.0mA, f = 1.0KHz CE = -10, I C = -1.0mA, f = 1.0KHz CE = -10, I C = -1.0mA, f = 1.0KHz 3.fT is defined as the frequency at which hfe extraplates t unity. CONDITIONS (PNP) Symbl MIN. TYP. MAX. UNIT ft 250 MHz Cb Cib 4.5 10.0 pf pf hie 2.0 12 kω hre 10.0 X 10-4 hfe 100 400 - he 3.0 60 μmhs μ Ω NF 4.0 db CE = -5.0, I C = -100 A, R S = 1.0K, f = 1.0KHz Switching characteristics Delay time Rise time Strage time Fall time Delay time Rise time Strage time Fall time PARAMETER (NPN) PARAMETER (PNP) CC = 3.0, BE = -0.5, I C = 10mA, I B1 = 1.0mA CC = 3.0, I C =10mA, I B1 = I B2 = 1.0mA CC = -3.0, BE = 0.5, I C = -10mA, I B1 = -1.0mA CC = -3.0, I C =-10mA, I B1 = I B2 = -1.0mA 4. Pulse Test: Pulse width 300μs, Duty cycle 2.0% CONDITIONS (NPN) CONDITIONS (PNP) Symbl td MIN. TYP. MAX. 35 tr ts 35 200 tf 50 Symbl td MIN. TYP. MAX. 35 tr ts 35 225 tf 75 UNIT ns UNIT ns μs Page 4
Rating and characteristic curves (NPN) TYPICAL TRANSIENT CHARACTERISTIC T=25 J C, -------- T J=125 C Page 5
Rating and characteristic curves (NPN) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE ARIATIONS (CE=-5.0dc, T A =25 C, Bandwidth=1.0Hz) IC=50 μa IC=50μA IC=100 μa SOURCE RESISTANCE=500½ IC=100μA h PARAMETER ( CE=10dc, T A =25 C, f=1.0khz) he OUTPUT ADMITTANCE ( μ mhs) Page 6
Rating and characteristic curves (NPN) Page 7
Switching time equivalent test circuits (PNP) us Rating and characteristic curves (PNP) TYPICAL TRANSIENT CHARACTERISTIC T=25 J C, -------- T J=125 C Page 8
Rating and characteristic curves (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE ARIATIONS (CE=-5.0dc, T A =25 C, Bandwidth=1.0Hz) ua ua ua ua he OUTPUT ADMITTANCE ( μ mhs) Page 9
Rating and characteristic curves (PNP) TYPICAL STATIC CHARACTERISTICS θv TEMPERATURE COEFFICIENTS (m/ C) Page 10
Pinning infrmatin Pin Simplified utline Symbl PIN 1. EMITTER 2 PIN 2. BASE 2 PIN 3. COLLECTOR 1 PIN 4. EMITTER 1 PIN 5. BASE 1 PIN 6. COLLECTOR 2 3 2 1 4 5 6 3 2 1 Q1 Q2 4 5 6 *Q1 PNP Q2 NPN Marking Type number Marking cde 46 Suggested slder pad layut SOT-363 0.025(0.65) 0.025(0.65) 0.051(1.3) 0.075(1.9) 0.098(2.5) 0.024(0.60) 0.0165(0.42) Dimensins in inches and (millimeters) Page 11
Packing infrmatin T d P1 P0 E B F W C A P D2 D1 D W1 unit:mm Item Symbl Tlerance SOT-363 Carrier width Carrier length Carrier depth Sprcket hle 13" Reel utside diameter 13" Reel inner diameter 7" Reel utside diameter 7" Reel inner diameter Feed hle diameter Sprcket hle psitin Punch hle psitin Punch hle pitch Sprcket hle pitch Embssment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 2.0 min 2.0 min 0.5 2.36 2.40 1.20 1.50 - - 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 T W 0.3 W1 1.0 Nte:Devices are packed in accr dance with EIA standar RS-481-A and specificatins listed abve. Page 12
Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) APPROX. GROSS WEIGHT (kg) SOT-363 7" 3,000 4.0 30,000 183*123*183 178 382*257*387 240,000 9.5 Suggested thermal prfiles fr sldering prcesses 1.Strage envirnment: Temperature=5 C~40 C Humidity=55% ± 25% 2.Reflw sldering f surface-munt devices TP Tp Critical Zne TL t TP Ramp-up TL Tsmax TL Tsmin Temperature ts Preheat Ramp-dwn 25 t25 C t Peak 3.Reflw sldering Time Prfile Feature Average ramp-up rate(tl t T P) Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min t max)(t s) Tsmax t TL -Ramp-upRate Time maintained abve: -Temperature(T L) -Time(t L) Peak Temperature(T P) Time within 5 C f actual Peak Temperature(t P) Ramp-dwn Rate Time 25 C t Peak Temperature Sldering Cnditin <3 C/sec 150 C 200 C 60~120sec <3 C/sec 217 C 60~260sec 255 C-0/+5 C 10~30sec <6 C/sec <6minutes Page 13
High reliability test capabilities Item Test 1. Steady State Operating Life Cnditins TA=25 C P D=150mW Test Duratin:1000hrs 2. High Temperature Reverse Bias Tj= 150, CE = 80% related vlage, Test Duratin:1000hrs 3. Temperature Cycle - 55 ( 15min) t 150 ( 15min) Air t Air Transitin Time< 20sec Test Cycles: 1000cycle 4. Autclave P= 2atm Ta= 121 RH= 100% Test Duratin: 96hrs 5. High Temperature Strage Life Ta= 150 Test Duratin: 1000hrs 6. Slderability 245, Test Duratin: 5sec 7. High Temperature High Humidity Reverse Bias Ta= 85, 85% RH, CE= 80% related vlage, Test Duratin: 1000hrs 8. Resistance t Sldering Heat 260, Test Duratin: 10sec Page 14